A formulation for preparing organic electronic devices, has: a p-type organic semiconductor polymer including a conjugated aryl compound, a conjugated heteroaryl compound, or a mixture of at least two of these compounds; an n-type semiconductor material having fullerene, substituted fullerene, or a mixture of at least two of these compounds; and a non-aqueous solvent. The concentration of the p-type organic semiconductor polymer is in the range from 12 mg/mL to 17 mg/mL per milliliter of solvent and the concentration of the p-type organic semiconductor material is in the range from 24 mg/mL to 28 mg/mL per milliliter of solvent.

An electronic device includes a base layer and a display element layer including a pixel definition layer having an opening defined therethrough, a light emitting element, and a light receiving element. Each of the light emitting element and the light receiving element includes a first electrode, a hole transport region disposed on the first electrode, an electron transport region disposed on the hole transport region, and a second electrode disposed on the electron transport region. The light emitting element includes a light emitting layer disposed between the hole transport region and the electron transport region. The light receiving element includes a light receiving layer disposed between the hole transport region and the electron transport region and an electron extraction layer, including an n-dopant material, disposed between the light receiving layer and the electron transport region. The light receiving element converts a light incident thereto into an electrical signal.

A fullerene derivative has a structure of formula (1) or formula (2): wherein Ar is a substituted or unsubstituted aromatic ring, * is a carbon atom at the point of attachment to a fullerene core, X is O, S, Se, or Te, and R is an organic group.

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The present invention relates to a perovskite optoelectronic device and a manufacturing method therefor. The present invention allows manufacture of a perovskite optoelectronic device with high efficiency at a low cost, as well as improving the electrical conductivity of a carbon nanotube electrode, by laying graphene oxide over conventional carbon nanotubes and may also be applied to a flexible device.

A method for depositing a conductive coating on a surface is provided, the method including treating the surface by depositing fullerene on the surface to produce a treated surface and depositing the conductive coating on the treated surface. The conductive coating generally includes magnesium. A product and an organic optoelectronic device produced according to the method are also provided.

The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

The invention relates to novel organic semiconducting compounds containing a polycyclic unit, to methods for their preparation and educts or intermediates used therein, to compositions, polymer blends and formulations containing them, to the use of the compounds, compositions and polymer blends as organic semiconductors in, or for the preparation of, organic electronic (OE) devices, especially organic photovoltaic (OPV) devices, perovskite-based solar cell (PSC) devices, organic photodetectors (OPD), organic field effect transistors (OFET) and organic light emitting diodes (OLED), and to OE, OPV, PSC, OPD, OFET and OLED devices comprising these compounds, compositions or polymer blends.

The present invention is to provide a photoelectric conversion element with an excellent sensitivity, an imaging element, an optical sensor, and a compound. The photoelectric conversion element according to the embodiment of the present invention includes, in the following order, a conductive film, a photoelectric conversion film, and a transparent conductive film, in which the photoelectric conversion film contains a compound represented by Formula (1) and a coloring agent.

A-D-A  (1)

The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

Disclosed are a photoelectric conversion device and an organic sensor and an electronic device including the same. The photoelectric conversion device includes a first and a second electrode, a photoelectric conversion layer between the first and the second electrode and configured to absorb light in at least one portion of a wavelength spectrum and to convert the absorbed light into an electric signal, and a buffer layer between the second electrode and the photoelectric conversion layer and including a mixture of at least two materials. The mixture includes a first and a second material. The first material has an energy bandgap of at least about 3.2 eV and a HOMO energy level of at least about 6.0 eV. The second material has an energy bandgap of less than or equal to about 2.8 eV and a HOMO energy level of at least about 6.0 eV.