Measurements on organic single crystals reveal remarkable optical and electrical characteristics compared to disordered films but practical device applications require uniform, pinhole-free films. Disclosed herein is a process to reliably convert as-deposited amorphous thin films to ones that are highly crystalline, with grains on the order of hundreds of microns. The disclosed method results in films that are pinhole-free and that possess grains that individually are single crystal domains.

Design and use of photo-switching, fullerene-based dyads of the design x-D-y-A or D-y-A-x as interfacial layers (IFL) for organic photovoltaic (OPV) devices are described herein. The fullerene-based dyads and triads of the present invention contain electron-donating substituents such as porphyrins or phthalocyanines that exhibit charge separation states with long lifetimes upon irradiation, resulting in rejection of electrons reaching the electrode and concurrently promoting the conduction of holes. This phenomenon has a strong rectifying effect on the whole device, not just the interfaces, resulting in improved charge extraction from the interior of the photo-active layer. The invention further describes anchoring an IFL to the ITO surface as a monolayer, bilayer, or greater multilayers. One OPV design embodiment of the present invention embodiment involves the formation of covalent bonds via silane groups (—SiR.sub.3) as the anchor (x), to form siloxane bonds.

A compound is represented by Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device include the compound.

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In Chemical Formula 1, each substituent is the same as defined in the detailed description.

An imaging system includes a light source that, in operation, emits an emitted light containing a near-infrared light in a first wavelength region, an image sensor, and a double-band pass filter that transmits a visible light in at least a part of a wavelength region out of a visible region and the near-infrared light in the first wavelength region. The image sensor includes light detection cells, a first filter that selectively transmits the near-infrared light in the first wavelength region, second to fourth filters that selectively transmit lights in second to fourth wavelength regions, respectively, which are contained in the visible light, and an infrared absorption filter. The infrared absorption filter faces the second to fourth filters and absorbs the near-infrared light in the first wavelength region.

Visibly transparent photovoltaic devices are disclosed, such as those are transparent to visible light but absorb near-infrared light and/or ultraviolet light. The photovoltaic devices make use of transparent electrodes and near-infrared absorbing visibly transparent photoactive compounds, optical materials, and/or buffer materials.

A method for packaging an organic photodetector includes providing a multilayer structure disposed on a portion of a substrate to form the organic photodetector; providing a casing having at least one wall and an open end, wherein the casing includes at least one aperture in at least one wall; sealing the open end of the casing with the substrate to enclose the multilayer structure in a volume such that the least one aperture is located in a path of radiation to an inactive region of the organic photodetector; evacuating the volume through the at least one aperture; and closing the at least one aperture after evacuating the volume to form a detector package. The multilayer structure includes a thin film transistor (TFT) array, an organic photodiode disposed on the TFT array, and a scintillator layer disposed on the organic photodiode. An imaging system including the detector package is also presented.

The invention relates to a formulation comprising p-type and n-type organic semiconductors (OSC) and one or more organic solvents, its use for the preparation of organic electronic (OE) devices, especially for bulk heterojunction (BHJ) organic photovoltaic (OPV) devices, to a process for preparing an OE device, especially a BHJ OPV device, using the formulation, and an OE device, especially a BHJ OPV device, prepared using such a process or formulation.

A photoelectric conversion element, including a first electrode, a second electrode, and at least one organic layer being present between the first electrode and the second electrode, in which the organic layer contains at least two kinds of compounds having the same skeletons and different substituents in combination.

The present disclosure provides a photoelectric conversion device including a semiconductor substrate including a signal output portion, an electrode, and an organic compound layer disposed between the signal output portion and the electrode and including a photoelectric conversion layer, wherein the signal output portion is in contact with the organic compound layer.

An organic photodetector includes a first electrode, a second electrode facing the first electrode, and an activation layer between the first electrode and the second electrode, wherein the activation layer includes a compound represented by Formula 1. An electronic apparatus includes the organic photodetector. In Formula 1, R.sub.1 to R.sub.6 and a3 to a6 are as described in the specification.

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