An organic charge integrating device is presented. The organic charge integrating device includes a thin film transistor (TFT) array, a first electrode layer disposed on the TFT array, an organic photoactive layer disposed on the first electrode layer, and a second electrode layer disposed on the organic photoactive layer. The organic photoactive layer has a thickness in a range from about 700 nanometers to about 3 microns. An organic x-ray detector is presented. An imaging system including the organic x-ray detector is also presented.

Embodiments described herein provide methods for processing various polymer materials for use in devices, such as photovoltaic devices. In some cases, oxidative chemical vapor deposition (oCVD) may be used to process conjugated polymers, including relatively insoluble conjugated polymers. The methods described herein provide processing techniques that may be used to synthesize and/or process polymers, such as unsubstituted thiophene.

Methods and systems for emitting light from electrically biased graphene are provided. An exemplary method of generating a light emission from graphene includes suspending a graphene membrane using at least one mechanical clamp and providing a current to the graphene membrane to establish a source-drain bias voltage along the graphene membrane.

The invention relates to new conjugated semiconducting polymers containing thermally cleavable side groups. The thermally cleavable side groups are selected from among carbonate groups and carbamate groups, By thermally cleaving side groups, the solubility or the polymers can he reduced in a targeted manner. The polymers are used as semiconductors in organic electronic (OE) devices, especially in organic photovoltaic (OPV) devices, organic photodetectors (OPDs), organic light emitling diodes (OLEDs), and organic field effect transistors (OFETs).

An organic compound and an electronic device, the organic compound being represented by General Formula (1):

##STR00001## wherein, in General Formula (1), R.sup.1, R.sup.2, R.sup.3, and R.sup.4 are each independently a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 4 carbon atoms, or a substituted or unsubstituted alkylthio group having 1 to 4 carbon atoms, A.sup.1 and A.sup.2 are each independently hydrogen, an aryl group including a ring that includes at least six members, or a heteroaryl group including a ring that includes at least five members, at least one of A.sup.1 and A.sup.2 being an aryl group including a ring that includes at least six members or a heteroaryl group including a ring that includes at least five members, and A.sup.3 is an aryl group including a ring that includes at least six members or a heteroaryl group including a ring that includes at least five members.

An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and provided between the first electrode and the second electrode, in which the photoelectric conversion layer has an exciton charge separation rate of 1×10.sup.10 s.sup.−1 to 1×10.sup.16 s.sup.−1 both inclusive in a p-n junction surface formed by the p-type semiconductor and the n-type semiconductors.

A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

An image pickup element 10 includes a first electrode 21, a charge accumulation electrode 24 that is arranged apart from the first electrode 21, a photoelectric conversion unit 23 that contacts the first electrode 21 and is formed above the charge accumulation electrode 24 via an insulation layer 82, and a second electrode 22 formed on the photoelectric conversion unit 23. The photoelectric conversion unit 23 includes, from the second-electrode side, a photoelectric conversion layer 23A, and an inorganic oxide semiconductor material layer 23B including In.sub.aGa.sub.bSn.sub.cO.sub.d, and 0.30≤b/(a+b+c)≤0.50 and b≥c are satisfied.

A heterostructure comprising at least one carbon nanomembrane on top of at least one carbon layer, a method of manufacture of the heterostructure, and an electronic device, a sensor and a diagnostic device comprising the heterostructure. The heterostructure comprises at least one carbon nanomembrane on top of at least one carbon layer, wherein the at least one carbon nanomembrane has a thickness of 0.5 to 5 nm and the heterostructure has a thickness of 1 to 10 nm.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode opposed to the first electrode; and an organic photoelectric conversion layer provided between the first electrode and the second electrode and formed using a plurality of materials having average particle diameters different from each other, the plurality of materials including at least fullerene or a derivative thereof, and a particle diameter ratio, of a first material having a smallest average particle diameter among the plurality of materials with respect to a second material having a largest average particle diameter among the plurality of materials, is 0.6 or less.