H10K85/221

Ultra-long chiral carbon nanotube, method for preparing the same, application thereof, and high-performance photoelectric device
11613466 · 2023-03-28 · ·

This disclosure relates to the technical field of carbon nanotubes, provides an ultra-long chiral carbon nanotube and a method for preparing the same. The ultra-long chiral carbon nanotube has a diameter of about 1.5 nm to 5.5 nm and has a length of about 100 mm to 650 mm, the ultra-long chiral carbon nanotube includes a double-walled carbon nanotube and a triple-walled carbon nanotube, and each layer of the ultra-long chiral carbon nanotube is semiconducting and has a helix angle greater than 10°.

Packing material, method for producing packing material, reading device, stored-article management system, disconnection detection device, unsealing detection label, and unsealing detection system
11487981 · 2022-11-01 · ·

A package in an aspect of the present invention includes: a package body having a receiving cavity for receiving a cavity item; a sheet for sealing the receiving cavity; a conducting wire formed on the sheet so as to pass above the sealed opening portion of the receiving cavity; and a wireless communication device formed on the sheet so as to be connected to the conducting wire. The wireless communication device transmits a signal including information which differs between before and after the conducting wire together with the sheet is cut as a result of opening the receiving cavity. The information transmitted from the wireless communication device is read by a reader. The package and the reader are used for a cavity item management system.

Transistors with Channels Formed of Low-Dimensional Materials and Method Forming Same

A method includes forming a first low-dimensional layer over an isolation layer, forming a first insulator over the first low-dimensional layer, forming a second low-dimensional layer over the first insulator, forming a second insulator over the second low-dimensional layer, and patterning the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator into a protruding fin. Remaining portions of the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator form a first low-dimensional strip, a first insulator strip, a second low-dimensional strip, and a second insulator strip, respectively. A transistor is then formed based on the protruding fin.

HIGHLY CONDUCTIVE AND BIOACTIVE PHOTOSENSITIVE RESINS FOR DEVELOPMENT OF FUNCTIONAL AND HYBRID ELECTRONICS AND SENSORS

The present disclosure describes a new resin which can be fabricated into conductive and bioactive microstructures via two-photon polymerization. The direct incorporation of conductive poly (3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) and/or multi-walled carbon nanotubes (MWCNTs) in a poly(ethylene glycol) diacrylate (PEGDA)-based blend remarkably enhances the electrical conductivity of microstructures over 10 orders of magnitude. Including biomaterials in the resin can promote cellular adhesion and create functional biosensors made of hybrid non-conductive and conductive structures for sensitive detection. Applications include development cost effective microelectronics in a broad range of biomedical research, electronics and sensors.

Composition comprising carbon nanotubes and non-conjugated polymer molecules and method of preparation thereof

A composition, which may be in the form of a film, comprises a network of carbon nanotubes. One or more non-conjugated polymer molecules are associated with individual carbon nanotubes or small bundles of carbon nanotubes in the form of polymer-nanotube complexes.

Solar battery

The present disclosure relates to a solar battery. The solar battery comprises a semiconductor structure, a back electrode, and an upper electrode. The semiconductor structure defines a first surface and a second surface. The semiconductor structure comprises an N-type semiconductor layer and a P-type semiconductor layer. The back electrode is located on the first surface. The upper electrode is located on the second surface. The back electrode comprises a first carbon nanotube, the upper electrode comprises a second carbon nanotube, and the first carbon nanotube intersects with the second carbon nanotube. A multilayer structure is formed by an overlapping region of the first carbon nanotube, the semiconductor structure and the second carbon nanotube.

Self-aligned short-channel electronic devices and fabrication methods of same

A self-aligned short-channel SASC electronic device includes a first semiconductor layer formed on a substrate; a first metal layer formed on a first portion of the first semiconductor layer; a first dielectric layer formed on the first metal layer and extended with a dielectric extension on a second portion of the first semiconductor layer that extends from the first portion of the first semiconductor layer, the dielectric extension defining a channel length of a channel in the first semiconductor layer; and a gate electrode formed on the substrate and capacitively coupled with the channel. The dielectric extension is conformally grown on the first semiconductor layer in a self-aligned manner. The channel length is less than about 800 nm, preferably, less than about 200 nm, more preferably, about 135 nm.

SEMICONDUCTOR DEVICE INCLUDING RESISTANCE CHANGE LAYER WITH CARBON NANOSTRUCTURES
20220336533 · 2022-10-20 · ·

A semiconductor device according to an embodiment of the present disclosure includes a substrate, a resistance change layer disposed on the substrate and including a plurality of carbon nanostructures, a channel layer disposed on the resistance change layer, a gate electrode layer disposed on the channel layer, and a source electrode layer and a drain electrode layer disposed to contact portions of the channel layer.

HEAD MOUNT DISPLAY DEVICE

A head mount display device, includes: a display panel; and an optical system positioned in front of the display panel. The display panel sequentially includes a light emitting element part, a third retarder, a reflective polarizer, and an absorptive polarizer, where the third retarder is positioned in front of the light emitting element part; and the optical system includes: a first curved lens, which is positioned to face the display panel, and includes a first retarder positioned on a first surface facing the display panel and a beam splitter positioned on a second surface thereof opposite to the first surface; and a second curved lens, which is positioned to face the beam splitter, and includes a second retarder positioned a first surface thereof facing the beam splitter and a second reflective polarizer positioned on a second surface thereof opposite to the first surface of the second curved lens.

Hybrid structure using graphene-carbon nanotube and perovskite solar cell using the same

Disclosed are a hybrid structure using a graphene-carbon nanotube and a perovskite solar cell using the same. The hybrid structure includes a graphene-carbon nanotube formed by laminating a second graphene coated with a polymer on an upper surface of a first graphene coated with a carbon nanotube. The perovskite solar cell includes: a substrate; a first electrode formed on the substrate and including a fluorine doped thin oxide (FTO); an electron transfer layer formed on the first electrode and including a compact-titanium oxide (c-TiO.sub.2); a mesoporous-titanium oxide (m-TiO.sub.2) formed on the electron transfer layer; a perovskite layer formed on the m-TiO.sub.2 and including a perovskite compound; and a graphene-carbon nanotube hybrid structure formed on the perovskite layer.