A photoelectric conversion element, including a first electrode, a second electrode, and at least one organic layer being present between the first electrode and the second electrode, in which the organic layer contains at least two kinds of compounds having the same skeletons and different substituents in combination.

A method produces cross-linked hole-conducting electric layers by converting functionalized p-dopants. The functionalized p-dopants are organic metal complexes containing at least one central atom and organic ligands, wherein the central atom is selected from a metal of the groups 6-15 of the periodic table, and at least one of the organic ligands is selected from the following formulas I-V, in which E independently of one another is oxygen, sulfur, selenium, or N(E.sub.1).sub.x, and each R.sub.v has at least one functionalizing group selected from the group R.sub.F including —OH, —COOH, —NH.sub.2, —NHR′, halogen, C2-C40-alkenyl, -dienyl, -alkinyl, -alkenyloxy, -dienyloxy, -alkinyloxy, acrylic acid, oxetan, oxiran, silane, acrylic acid, anhydride, and cyclobutane or consists of the groups, and G=C(R.sub.F).sub.uH.sub.vF.sub.w where u+v+w=3 and n=1-4.

A hole transporting material having excellent heat resistance and durability, a perovskite solar cell including the hole transporting material in a hole transporting layer, and a method for manufacturing the solar cell are provided. Provided is a perovskite solar cell having PCE which is equal to or greater than PCE in the related art because the hole transporting layer is formed by using the hole transporting material in which the phthalocyanine-based organic ligand is coordinate-bonded to metal. Also, provided is a perovskite solar cell which can maintain initial PCE for a long time in a wide temperature range when the hole transporting material is used as the hole transporting layer due to excellent heat resistance and durability.

Described is an apparatus forming complementary tunneling field effect transistors (TFETs) using oxide and/or organic semiconductor material. One type of TFET comprises: a substrate; a doped first region, formed above the substrate, having p-type material selected from a group consisting of Group III-V, IV-IV, and IV of a periodic table; a doped second region, formed above the substrate, having transparent oxide n-type semiconductor material; and a gate stack coupled to the doped first and second regions. Another type of TFET comprises: a substrate; a doped first region, formed above the substrate, having p-type organic semiconductor material; a doped second region, formed above the substrate, having n-type oxide semiconductor material; and a gate stack coupled to the doped source and drain regions. In another example, TFET is made using organic only semiconductor materials for active regions.

Provided is a perovskite solar cell having remarkably excellent heat resistance, durability, and photoelectric conversion efficiency by employing a phthalocyanine derivative as a hole transport material.

An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and provided between the first electrode and the second electrode, in which the photoelectric conversion layer has an exciton charge separation rate of 1×10.sup.10 s.sup.−1 to 1×10.sup.16 s.sup.−1 both inclusive in a p-n junction surface formed by the p-type semiconductor and the n-type semiconductors.

Embodiments include radiative heat-blocking materials comprising one or more non-fullerene components and optionally one or more hole-scavenging components. Embodiments further include windows comprising a transparent photovoltaic device configured to transmit visible light and absorb infrared radiation, wherein an active layer of the photovoltaic device comprises the radiative heat-blocking material. Embodiments further include other devices based on the radiative heat-blocking materials.

An organic photoelectronic device includes a first electrode having a plurality of nanopatterns arranged at a regular interval, a second electrode facing the first electrode and an active layer between the first electrode and the second electrode, the active layer absorbing light in at least one wavelength of a visible ray region.

An imaging device includes at least one unit pixel cell including a photoelectric converter and a voltage application circuit. The photoelectric converter includes a first electrode, a light-transmitting second electrode, a first photoelectric conversion layer containing a first material and a second photoelectric conversion layer containing a second material. The impedance of the first photoelectric conversion layer is larger than the impedance of the second photoelectric conversion layer. The voltage application circuit applies a first voltage or a second voltage having a larger absolute value than the first voltage selectively between the first electrode and the second electrode.

The present invention provides methods for increasing stability and efficiency of organic perovskite materials for use in various electronic devices. In particular, methods of the invention use a non-peripheral substituted phthalocyanine for passivating defects in organic perovskite materials, thereby increasing its stability and efficiency relative to the same material in the absence of said non-peripheral substituted phthalocyanine.