Patent classifications
H10K85/321
Composite material, light-emitting element, light-emitting device, and manufacturing method thereof
It is an object of the present invention to provide a composite material that can be used for manufacturing a heat-resistant light-emitting element, provide a composite material that can be used for manufacturing a heat-resistant light-emitting element that can be driven with stability for a long period of time, and further, provide a composite material that can be used for manufacturing a light-emitting element that easily prevents short circuit between electrodes and uses less power. The present invention provides a composite material that has a first metal oxide skeleton including a first metal atom and an organic compound that is bound to the first metal atom by forming a chelate, where the first metal oxide exhibits an electron accepting property to the organic compound.
ALLOYED HALIDE DOUBLE PEROVSKITES AS SOLAR-CELL ABSORBERS
An alloyed halide double perovskite material, an alloyed halide double perovskite solar-cell absorber and solar cells constructed with such absorbers, the alloyed halide double perovskite material having the formula A.sub.2B.sub.1-aB.sub.1-bD.sub.xX.sub.6, where A is an inorganic cation, an organic cation, a mixture of inorganic cations, a mixture of organic cations, or a mixture of one or more inorganic cations and one or more organic cations, where B is a metal, a mixture of metals, a metalloid, a mixture of metalloids, any mixture thereof, or is a vacancy, where B is a metal, a mixture of metals, a metalloid, a mixture of metalloids, any mixture thereof, or is a vacancy, where D is a dopant, and where X is a halide, a pseudohalide, a mixture of halides, a mixture of pseudohalides, or a mixture of halides and pseudohalides, and where x=a+b.
Surface-modified quantum dots, preparation method thereof, and quantum dot-polymer composite and electronic device including the same
Disclosed are a surface-modified quantum dot surface-modified with a ligand complex having a specific structure on the surface of the semiconductor nanocrystal, a method for preparing the same, and a quantum dot-polymer composite or electronic device including the same.
Metal Amides for Use as HIL for an Organic Light-Emitting Diode (OLED)
The present invention relates to metal amides of general Formula Ia and for their use as hole injection layer (HIL) for an Organic light-emitting diode (OLED), and a method of manufacturing Organic light-emitting diode (OLED) comprising an hole injection layer containing a metal amide of general Formula Ia.
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Triaryl Amine Thick Layer Doped with Metal Amides for use as HIL for an Organic Light-Emitting Diode (OLED)
The present invention relates to a hole injection layer for an OLED comprising a triarylamine compound doped with a charge neutral metal amide compound, characterized in that the hole injection layer has a thickness of at least about ?20 nm to about ?1000 nm and the charge neutral metal amide compound has the Formula Ia.
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Light-Emitting Element
To provide a light-emitting element which uses a fluorescent material as a light-emitting substance and has higher luminous efficiency. To provide a light-emitting element which includes a mixture of a thermally activated delayed fluorescent substance and a fluorescent material. By making the emission spectrum of the thermally activated delayed fluorescent substance overlap with an absorption band on the longest wavelength side in absorption by the fluorescent material in an S.sub.1 level of the fluorescent material, energy at an S.sub.1 level of the thermally activated delayed fluorescent substance can be transferred to the S.sub.1 of the fluorescent material. Alternatively, it is also possible that the S.sub.1 of the thermally activated delayed fluorescent substance is generated from part of the energy of a T.sub.1 level of the thermally activated delayed fluorescent substance, and is transferred to the S.sub.1 of the fluorescent material.
P-Doping Cross-Linking Of Organic Hole Transporters
A method for producing hole-transporting electrical layers includes reacting a functionalized organic matrix compound with at least one cross-linking reagent on a substrate, which thereby forms higher-molecular-weight compounds. The functionalized organic matrix compound may include particular constituents arranged in a particular chemical formula.
Material for organic electroluminescent elements, and organic electroluminescent element using same
Provided are an organic electroluminescent device (organic EL device) that is improved in luminous efficacy, sufficiently secures driving stability, and has a simple construction, and a material for organic EL devices to be used in the organic EL device. The material for organic EL devices is a material for organic EL devices formed of an ortho-carborane compound having a structure in which a silyl group (SiR.sub.3) is bonded to a divalent ortho-carborane group represented by C.sub.2B.sub.10H.sub.10 through an aromatic group. In addition, the organic electroluminescent device is an organic electroluminescent device having a structure in which an anode, an organic layer, and a cathode are laminated on a substrate, the device having an organic layer containing the ortho-carborane compound, and the organic layer being a light-emitting layer, an electron-transporting layer, a hole-blocking layer, or an exciton-blocking layer.
Electron transport layer and film having improved thermal stability
Aspects of the invention provide a composition having a blend of an electron transport material and an organo alkali-metal salt wherein the salt has a glass transition greater than 115? C. The organo-alkali metal salt may be selected from the group consisting of lithium 2-(2-pyridyl)phenolate (LiPP), lithium 2-(2,2-bipyridine-6-yl)phenolate (LiBPP), 2-(isoquinoline-10-yl)phenolate (LiIQP), and lithium 2-(2-phenylquinazolin-4-yl)phenolate and lithium 2-(4-phenylquinazolin-2-yl)phenolate. In a preferred embodiment, the organo-alkali metal salt is lithium 2-(2,2-bipyridine-6-yl)phenolate (LiBPP). Aspects of the invention also provide films and devices having a film layer prepared from the composition.
Crosslinkable Quantum Dot And Preparing Method Thereof, Array Substrate And Preparing Method Thereof
A crosslinkable quantum dot (QD) and a preparing method thereof, an array substrate made by using the crosslinkable quantum dot (QD) and a preparing method thereof are provided. The surface of the crosslinkable quantum dot has a pair of groups R1 and R2 capable of reacting to form a cross-linked network, or a group R3 capable of being cross-linked by a crosslinking agent to form a cross-linked network.