Multilayer structures comprising a covalent organic framework (COF) film in contact with a polyaromatic carbon (PAC) film. The multilayer structures can be made by combining precursor compounds in the presence of a PAC film. The PAC film can be for example, a single layer graphene film. The multilayer structures can be used in a variety of applications such as solar cells, flexible displays, lighting devices, RFID tags, sensors, photoreceptors, batteries, capacitors, gas-storage devices, and gas-separation devices.

Organic light emitting devices (OLEDs) are described, the OLEDs comprising an anode; a cathode; and an organic region, disposed between the anode and the cathode, comprising a first complex and a second complex; wherein when a voltage is applied across the anode and cathode at room temperature, the OLED emits a luminescent radiation that comprises one or more luminescent radiation components resulting from the formation of at least one exciplex; wherein the exciplex is formed by at least one of the following aggregate types: 1) at least one aggregate within the first complex, and at least one aggregate within the second complex; 2) at least one aggregate between the first and the second complex; and 3) both 1 and 2.

The present invention is directed to an ink composition for forming an organic semiconductor layer, wherein the ink composition comprises: —at least one p-type dopant comprising electron withdrawing groups; —at least one first auxiliary compound, wherein the first auxiliary compound is an aromatic nitrile compound, wherein the aromatic nitrile compound has about ≥1 to about ≤3 nitrile groups and a melting point of about <100° C., wherein the first auxiliary compound is different from the p-type dopant; and wherein the electron withdrawing groups are fluorine, chlorine, bromine and/or nitrile.

Disclosed is a device that includes an emissive material or region including a host that is doped with a first material as an emitter that is an acceptor and a phosphorescent-capable second material as a sensitizer. The first material and the second material each has a first singlet state and a first triplet state. The first triplet state of the second material is not lower than the first triplet state of the first material. The second material transfers excitons to the first material and the excitons that transition to the first triplet state of the first material can be activated to the first singlet state of the first material through a thermal activation process.

The present invention relates to a color conversion device (100).

Visibly transparent photovoltaic devices are disclosed, such as those are transparent to visible light but absorb near-infrared light and/or ultraviolet light. The photovoltaic devices make use of transparent electrodes and near-infrared absorbing visibly transparent photoactive compounds, optical materials, and/or buffer materials.

The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first semiconducting layer comprising (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal borate complexes, wherein the metal borate complex consists of at least one metal cation and at least one anionic ligand consisting of at least six covalently bound atoms which comprises at least one boron atom,
wherein the first semiconducting layer is a hole injection layer, a hole-injecting part of a charge generating layer or a hole transport layer, a method for preparing the same and a respective metal borate compound.

The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first semiconducting layer comprising: (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal borate complexes, wherein the metal borate complex consists of at least one metal cation and at least one anionic ligand consisting of at least six covalently bound atoms which comprises at least one boron atom, wherein the first semiconducting layer is a hole injection layer, a hole-injecting part of a charge generating layer or a hole transport layer, a method for preparing the same and a respective metal borate compound.

A light emitting device includes a first electrode, a hole transporting layer in contact with the first electrode, a second electrode, an electron transporting layer in contact with the second electrode; and an emissive layer between the hole transporting layer and the electron transporting layer. The emissive layer includes a metal-assisted delayed fluorescent (MADF) emitter, a fluorescent emitter, and a host, and the MADF emitter harvests electrogenerated excitons and transfers energy to the fluorescent emitter.

The present invention relates to an electronic device comprising a hole injection layer and/or a hole transport layer and/or a hole generating layer, wherein at least one of the hole injection layer, the hole transport layer and the hole generating layer comprises a coordination complex comprising at least one electropositive atom M having an electro-negativity value according to Allen of less than 2.4 and at least one ligand L having the following structure:

##STR00001##

wherein R.sup.1 and R.sup.2 are independently selected from the group, consisting of C.sub.1 to C.sub.30 hydrocarbyl groups and C.sub.2 to C.sub.30 heterocyclic groups, wherein R.sup.1 and/or R.sup.2 may optionally be substituted with at least one of CN, F, Cl, Br and I.