The present disclosure provides a display panel and a display device. The display panel includes an anode layer, a hole transport layer, an emission layer, an electron transport layer, and a cathode layer, and the emission layer is made of lanthanide-based metal polymer. The technical effect of the present disclosure is to improve the luminous stability of the display device, and improve the service life of the display panel.

A photoelectric conversion device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode and configured to absorb light in at least one part of a wavelength spectrum of light and to convert it into an electric signal, and an inorganic nanolayer between the first electrode and the photoelectric conversion layer and including a lanthanide element, calcium (Ca), potassium (K), aluminum (Al), or an alloy thereof. An organic CMOS image sensor may include the photoelectric conversion device. An electronic device may include the organic CMOS image sensor.

The present disclosure provides a display panel and a method for manufacturing the same, a detection method and a display device, and relates to the field of display technology. The display panel includes one or more detection units located on a substrate, wherein at least one of the one or more detection units comprises: a first electrode layer and a second electrode layer opposite to the first electrode layer; a light emitting layer located between the first electrode layer and the second electrode layer; and a fluorescent probe layer located between the first electrode layer and the light emitting layer.

A dendrimer compound characterized by comprising a core represented by the following formula (1-1), (1-2), (1-3), or (1-4) and at least one kind of dendritic structure selected among dendritic structures represented by the following formulae (3) and (4). ##STR00001##

A light emitting display device includes a substrate that includes a first pixel, a second pixel, a third pixel, and an infrared ray emission portion, the first pixel, the second pixel, and the third pixel representing different colors, a first electrode on the substrate, a second electrode that overlaps the first electrode, an emission layer between the first electrode and the second electrode, and an auxiliary layer between the first electrode and the emission layer. The emission layer may include a first emission layer in the first pixel and an infrared ray emission layer in the infrared ray emission portion, the auxiliary layer may include a first auxiliary layer in the first pixel, and the infrared ray emission layer and the first auxiliary layer may include the same material.

A luminescence device includes a first electrode, a first emission portion disposed on the first electrode, a second electrode disposed on the first emission portion, and a capping layer disposed on the second electrode and including a metal atom and a metal halide compound, wherein the metal atom is a lanthanide metal, a transition metal, or a post-transition metal and the metal halide compound is formed by combining an alkali metal atom and a halogen atom.

The present disclosure provides a display panel and a method for manufacturing the same, a detection method and a display device, and relates to the field of display technology. The display panel includes one or more detection units located on a substrate, wherein at least one of the one or more detection units comprises: a first electrode layer and a second electrode layer opposite to the first electrode layer; a light emitting layer located between the first electrode layer and the second electrode layer; and a fluorescent probe layer located between the first electrode layer and the light emitting layer.

The invention provides a blue organic electroluminescent device, composed of a substrate, an anode layer, an anode modification layer, a hole transporting-electron blocking layer, a hole-dominated light-emitting layer, an electron-dominated light-emitting layer, a hole blocking-electron transporting layer, a cathode modification layer, and a cathode layer arranged in turn, wherein the electron-dominated light-emitting layer is composed of an organic sensitive material, a blue organic light-emitting material, and an electron-type organic host material. A rare earth complex having a matched energy level, such as Tm(acac).sub.3phen or Dy(acac).sub.3phen is selected as the organic sensitive material, and a trace amount of the same is doped into the electron-dominated light-emitting layer, which has the function of an energy transporting ladder and a deep binding center for charge carriers, so as to improve the luminescence efficiency, spectral stability, and service life of the device, reduce the operating voltage of the device, and delay the attenuation of the effectiveness of the device.

A photoelectric conversion device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode and configured to absorb light in at least one part of a wavelength spectrum of light and to convert it into an electric signal, and an inorganic nanolayer between the first electrode and the photoelectric conversion layer and including a lanthanide element, calcium (Ca), potassium (K), aluminum (Al), or an alloy thereof. An organic CMOS image sensor may include the photoelectric conversion device. An electronic device may include the organic CMOS image sensor.

The invention relates to an optoelectronic and/or photoelectrochemical device including a conductive support layer, n-type semiconductor, a sensitizer or light-absorber layer, a hole transporting layer, a spacer layer and a back contact, wherein the n-type semiconductor is in contact with the sensitizer or light-absorber layer, the sensitizer or light-absorber layer includes a perovskite or metal halide perovskite material, the hole transporting layer is in direct contact with the sensitizer or light-absorber layer and includes an inorganic hole transporting material or inorganic p-type semiconductor, the spacer layer is between the hole transporting layer and the back contact and includes a material being different from the inorganic hole transporting material and the material of the back contact.