Patent classifications
H10K85/381
Electronic semiconducting device and method for preparing the electronic semiconducting device
The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first hole transport layer, wherein the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal sate and from electrically neutral metal complexes comprising a metal cation and a at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Me, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (TV) or less; provided that a) p-dopants comprising anion or anionic ligand having generic formula (Ia) or (Ib) wherein A.sup.1, A.sup.2, A.sup.3 and A.sup.4 are independently selected from CO, SO.sub.2 or POR.sup.1; R.sup.1=electron withdrawing group selected from the group comprising halide, nitrile, halogenated or perhalogenated C.sub.1 to C.sub.20 alkyl, halogenated or perhalogenated C.sub.6 to C.sub.20 aryl, or halogenated or perhalogenated heteroaryl with 5 to 20 ring-forming atoms; B.sup.1, B.sup.2, B.sup.3 and B.sup.4 are same or independently selected from substituted or unsubstituted C.sub.1 to C.sub.20 alkyl, substituted or unsubstituted C.sub.1 to C.sub.20 heteroalkyl, substituted or unsubstituted C.sub.6 to C.sub.20 aryl, substituted or unsubstituted C.sub.5 to C.sub.20 heteroaryl, or B.sup.1 and B.sup.2 form a ring; and b) p-dopants consisting of Li cation and an anion selected from perchlorate and tetrafluoroborate are excluded, and the first hole transport layer comprises a sublayer, wherein the electrical dopant is comprised in an amount, by weight and/or by volume, exceeding the total amount of other components which may additionally be comprised in the sublayer, and a method for preparing the same. ##STR00001##
Organic electronic device
The present invention relates to an organic electronic device, comprising a first electrode, a second electrode, and a substantially organic layer comprising a compound according to formula (I) between the first and the second electrode: ##STR00001##
wherein M is a metal ion, each of A.sup.1-A.sup.4 is independently selected from H, substituted or unsubstituted C6-C20 aryl and substituted or unsubstituted C2-C20 heteroaryl and n is valency of the metal ion.
METAL-ASSISTED DELAYED FLUORESCENT MATERIALS AS CO-HOST MATERIALS FOR FLUORESCENT OLEDS
A light emitting device includes a first electrode, a hole transporting layer in contact with the first electrode, a second electrode, an electron transporting layer in contact with the second electrode; and an emissive layer between the hole transporting layer and the electron transporting layer. The emissive layer includes a metal-assisted delayed fluorescent (MADF) emitter, a fluorescent emitter, and a host, and the MADF emitter harvests electrogenerated excitons and transfers energy to the fluorescent emitter.
Porphyrin based sensitizer for dye-sensitized solar cell
The present invention relates to compounds of formula (I) ##STR00001##
based on a porphyrin core and a π-conjugated linker or acceptor introduced between the porphyrin core and an anchoring group having a high absorption coefficient covering the whole UV-Visible and near-infrared spectral response, and their use as sensitizer or dye and an electrochemical or optoelectronic device including a compound of the invention.
PEROVSKITE SOLAR CELLS WITH NEAR-INFRARED SENSITIVE LAYERS
The present disclosure is directed to perovskite-based solar cell device structures and compositions comprising one or more near infrared sensitive semiconducting materials. The near infrared sensitive semiconducting materials can extend the photoresponse spectra of the devices to the near infrared region, thereby improving the power conversion efficiency of the solar cell.
QUANTUM CONFINED PEPTIDE ASSEMBLIES AND USES THEREOF
Self-assembled structures formed of a plurality of cyclic peptides which are in association with metal ions is provided. The cyclic peptides are each of from 2 to 6 amino acid residues, and two or more of the amino acid residues are each independently an aromatic amino acid residue. The self-assembled structures exhibit photoluminescence and can be used or incorporated in light emitting systems.
LIGAND, LIGAND QUANTUM DOT, QUANTUM DOT LAYER AND METHOD FOR PATTERNING THE SAME
The present disclosure relates to a ligand for a quantum dot, a ligand quantum dot, a quantum dot layer and a method for patterning the same. The surface of the ligand quantum dot of the present disclosure is connected with the cleavage-type ligand including a first ligand unit A, a cleavage unit B, and an adhesion adjusting unit C. The method includes: providing a substrate; coating a mixture containing the ligand quantum dot on the substrate to form a quantum dot film; exposing a preset region of the quantum dot film to ultraviolet light, so that the cleavage unit B in the cleavage-type ligand undergoes a photolysis reaction, and a molecular segment containing the adhesion adjusting unit C and obtained after decomposition is detached from a surface of the quantum dot; and washing off an unexposed region of the quantum dot film with an organic solvent, followed by drying.
Method for forming nano-gaps in graphene
The present invention relates to a method for forming nano-gaps in graphene. The method may include applying a voltage across a region of graphene such that a nano-gap which extends across the entire width of the graphene is formed, wherein the region across which the voltage is applied may include a point which is the narrowest in the region.
Active OLED display, method for preparing an active OLED display and compound
The present invention relates to a display device comprising—a plurality of OLED pixels comprising at least two OLED pixels, the OLED pixels comprising an anode, a cathode, and a stack of organic layers, wherein the stack of organic layers—is arranged between and in contact with the cathode and the anode, and—comprises a first electron transport layer, a first hole transport layer, and a first light emitting layer provided between the first hole transport layer and the first electron transport layer, and—a driving circuit configured to separately driving the pixels of the plurality of OLED pixels, wherein, for the plurality of OLED pixels, the first hole transport layer is provided in the stack of organic layers as a common hole transport layer shared by the plurality of OLED pixels, and the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal salts and from electrically neutral metal complexes comprising a metal cation and at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Mn, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (IV) or less, a method for preparing the display device and a chemical compound for use therein.
QUANTUM DOT COMPOSITION, LIGHT EMITTING ELEMENT, AND METHOD FOR MANUFACTURING THE SAME
A quantum dot composition includes a quantum dot, and a ligand bonded to a surface of the quantum dot, wherein the ligand includes a head portion bonded to the surface of the quantum dot, a connecting portion connected to the head portion and including a metal, and a tail portion coordinated to the metal of the connecting portion. The quantum dot composition according to the present embodiments is used to form an emission layer of a light emitting element, and may thus increase service life and luminous efficiency of the light emitting element including the emission layer formed using the quantum dot composition.