A quantum dot including a first ligand and a second ligand on a surface of the quantum dot, a composition or composite including the same, and a device including the same. The first ligand includes a compound represented by Chemical Formula 1 and the second ligand includes a compound represented by Chemical Formula 2:
MA.sub.n  Chemical Formula 1 wherein M, n, and A are the same as defined in the specification; and ##STR00001## wherein, R.sup.1, L.sub.1, Y.sub.1, R, k1, and k2 are the same as defined in the specification.

Iron-based photosensitizers, which can be used for solar energy conversion and photoluminescence applications, include an iron complex with N-heterocyclic carbene (NHC) ligands (FeNHC), a linking unit, and a polarizable unit formed of a pi conjugated structure having a one-electron reduction potential more positive than NHC.

Disclosed are an infrared absorption composition, and a photoelectric device, an organic sensor, and an electronic device including the same. The infrared absorption composition includes a p-type semiconductor compound represented by Chemical Formula 1 and an n-type semiconductor compound. The n-type semiconductor compound includes a compound represented by Chemical Formula 2A, a compound represented by Chemical Formula 2B, a compound represented by Chemical Formula 2C, a fullerene derivative, or a combination thereof. The p-type semiconductor compound and the n-type semiconductor compound provide a bulk heterojunction (BHJ) structure.

A compound is represented by Formula 1 below: ##STR00001##
wherein each of Ar.sub.1, Ar.sub.2, and L is independently selected from a list of substituted or unsubstituted aryl groups, l is 0 or 1, m is an integer from 1 to 5, n is 2 or 3. When m is two or more, two or more L(s) are identical to or different from each other. M indicates a post-transition metal or a transition metal.

Provided is an OLED that includes, sequentially: an anode; a first emissive region; and a cathode; wherein the first emissive region comprises: a first compound; and a second compound; wherein the first compound is capable of functioning as a perovskite emitter in an OLED; wherein the second compound is capable of functioning as an emitter in an OLED, wherein the second compound is selected from the group consisting of phosphorescent emitters, fluorescent emitters, and delayed fluorescent emitters.

The present disclosure provides a display panel including a substrate, an organic electroluminescent device, and an absorbing layer, wherein the organic electroluminescent device is arranged on the substrate, and the absorbing layer covers the organic electroluminescent device and the substrate. The absorbing layer includes an oxygen absorbing layer and a photocatalytic layer for catalyzing water decomposition, the photocatalytic layer covers the organic electroluminescent device and the substrate around the organic electroluminescent device, and the oxygen absorbing layer is covered on the photocatalytic layer and the substrate around the photocatalytic layer.

Provided is a compound comprising a structure of ##STR00001##
wherein the variables are defined herein.

An organic light-emitting device and an electronic apparatus incorporating the same. The organic light-emitting device includes an anode, a cathode, and an organic layer between the anode and the cathode and comprising an emission region. The emission region includes a first emission layer, a second emission layer, and a first exciton quenching layer. The first emission layer comprises a first host and a first dopant, the second emission layer comprises a second host and a second dopant, and the first exciton quenching layer is disposed between the first emission layer and the second emission layer and comprises a first quenching material.

The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first semiconducting layer comprising (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal borate complexes, wherein the metal borate complex consists of at least one metal cation and at least one anionic ligand consisting of at least six covalently bound atoms which comprises at least one boron atom,
wherein the first semiconducting layer is a hole injection layer, a hole-injecting part of a charge generating layer or a hole transport layer, a method for preparing the same and a respective metal borate compound.

The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first semiconducting layer comprising: (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal borate complexes, wherein the metal borate complex consists of at least one metal cation and at least one anionic ligand consisting of at least six covalently bound atoms which comprises at least one boron atom, wherein the first semiconducting layer is a hole injection layer, a hole-injecting part of a charge generating layer or a hole transport layer, a method for preparing the same and a respective metal borate compound.