A photoelectronic device includes an active layer containing inorganic particles, and an oxide semiconductor layer containing zinc (Zn), silicon (Si), and oxygen (O), where the oxide semiconductor layer and the active layer are stacked layers. The photoelectronic device further includes a multilayer transparent electrode over or under the active layer, wherein the oxide semiconductor layer serves as a part of the multilayer transparent electrode.

A light-emitting element includes: a light-reflective first electrode; a light-emitting layer above the first electrode; a light-transmissive second electrode above the light-emitting layer; a first light-transmissive layer on the second electrode; and a second light-transmissive layer on the first layer. First optical cavity structure is formed between surface of the first electrode facing the light-emitting layer and surface of the second electrode facing the light-emitting layer. The first optical cavity structure corresponds to, as peak wavelength, first wavelength longer than peak wavelength of light emitted from the light-emitting layer. Second optical cavity structure is formed between the surface of the first electrode facing the light-emitting layer and an interface between the first layer and the second layer. The second optical cavity structure corresponds to, as peak wavelength, second wavelength shorter than the first wavelength. The first and second layers differ in refractive index from each other by 0.3 or greater.

A display device including a base layer, a circuit layer, a light emitting device layer, an organic layer, and a touch sensing unit. The base layer includes a display area and a non-display area. A plurality of insulation patterns overlaps the non-display area. The organic layer is disposed on the light emitting device and overlaps the plurality of insulation patterns and the organic light emitting diode. At least a portion of the plurality of touch signal lines overlaps the plurality of insulation patterns.

A display apparatus includes: a substrate comprising a main display area, a component area, and a peripheral area; a main pixel electrode at the main display area of the substrate; a main thin-film transistor at the main display area of the substrate and electrically connected to the main pixel electrode; an auxiliary pixel electrode at the component area of the substrate; an auxiliary thin-film transistor at the peripheral area of the substrate; and a connecting wire connected to the auxiliary pixel electrode and including a thin portion having a thickness less than a thickness of the auxiliary pixel electrode, wherein the connecting wire electrically connects the auxiliary thin-film transistor to the auxiliary pixel electrode.

The present disclosure discloses an organic electroluminescence display panel, a method for manufacturing the display panel, and a display apparatus. The organic electroluminescence display panel includes: a substrate including a first region and a second region adjacent to each other; a buffer layer located on the substrate; a first active layer located on the buffer layer in the first region; a first gate located on the first active layer and insulated from the first active layer; a second active layer located on the buffer layer in the second region; a metal electrode located on the first gate and insulated from the first gate; and a second gate located on the second active layer and insulated from the second active layer.

The electroluminescent element includes an anode electrode, a cathode electrode, and a quantum dot (QD) layer including quantum dots and arranged between the anode electrode and the cathode electrode. The quantum dots are Cd-free quantum dots that include at least Zn and Se, and do not include Cd at a mass ratio of 1/30 or greater in relation to Zn. The particle size of each quantum dot is within a range from 3 nm to 20 nm.

A display device includes a first substrate having a display area and a non-display area. The first substrate includes a conductive line in the non-display area. A second substrate faces the first substrate and is spaced apart from the first substrate. A conductive layer is disposed between the first substrate and the second substrate. The conductive layer is spaced apart from the first substrate in a direction perpendicular to a top surface of the first substrate. The conductive layer at least partially overlaps the conductive line and is electrically floated.

A display panel and a display device are disclosed. The display panel includes: a first region and a second region, a transmittance of the first region being greater than a transmittance of the second region; a light-emitting unit disposed in the first region, the light-emitting unit including a first unit and a second unit, the first unit and the second unit respectively including a plurality of pixels with a plurality of colors; a drive circuit disposed in the second region and connected to the light-emitting unit; and a transparent conducting wire, at least two pixels with a same color respectively in the first unit and the second unit of the light-emitting unit being connected by the transparent conducting wire.

The present invention discloses a thin-film light-emitting device including a charge generating junction layer and a method of fabricating the thin-film light-emitting device. The thin-film light-emitting device including a charge generating junction layer according to one embodiment of the present invention includes a negative electrode; at least one light-emitting unit formed on the negative electrode and including a charge generating junction layer, an electron injection/transport layer, a thin-film light-emitting layer, and a hole injection/transport layer in a sequential order; and a negative electrode formed on the light-emitting unit. In the thin-film light-emitting device of the present invention, the charge generating junction layer has a layer-by-layer structure in which a p-type semiconductor layer and an n-type semiconductor layer are formed, and the concentration of oxygen vacancies at the interface between the p-type and n-type semiconductor layers is adjusted by annealing the n-type semiconductor layer.

The present disclosure relates to a method of manufacturing an array substrate. The method of manufacturing an array substrate may include forming a main via hole in a substrate, filling a first conductive material in the main via hole, and forming a pixel circuit layer on a first surface of the substrate. The pixel circuit layer may include a first via hole. An orthographic projection of the first via hole on the substrate may at least partially overlap the corresponding main via hole.