The present disclosure provides an organic light-emitting diode (OLED) display device, a manufacturing method thereof, and a display apparatus containing the OLED display device. A pattern of an anode layer is formed over a base substrate. A graphene oxide layer is formed over the pattern of the anode layer by an electroplating process. The graphene oxide layer is used as an auxiliary layer or is used as at least one of a hole injection layer and a hole transport layer in the OLED display device. Since the graphene oxide material has high work function, the hole injection barrier may be reduced and to the hole injection and hole transport capability of the OLED display device may be enhanced to improve light emitting performance of the OLED display device.

An organic light emitting diode and an organic light emitting display panel, the organic light emitting diode including an anode disposed on a base layer; a first organic light emitting layer disposed on the anode; a cathode disposed on the first organic light emitting layer; and an electron control layer disposed between the first organic light emitting layer and the cathode, the electron control layer including ytterbium, wherein the cathode includes a first inorganic compound layer contacting the electron control layer to form a P-N junction with the electron control layer; and a conductive layer disposed on the first inorganic compound layer.

A transparent conductive film includes a metal oxide, a metal, and an epoxy, wherein a refractive index of the metal may be lower than that of the epoxy.

A display device includes a base layer, a circuit layer disposed on the base layer, a pixel definition layer disposed on the circuit layer, including an inorganic protective layer and an organic layer disposed on the inorganic protective layer, and defining a first opening adjacent to the circuit layer and exposing the inorganic protective layer and a second opening exposing the organic layer on the first opening, a light-emitting element including a first electrode disposed on the circuit layer, a functional layer disposed on the first electrode, and a second electrode disposed on the functional layer, and an encapsulation layer covering the pixel definition layer and the light-emitting element. The encapsulation layer includes an auxiliary electrode layer covering the light-emitting element, the inorganic protective layer, and the organic layer, an encapsulation organic film disposed on the auxiliary electrode layer, and an upper inorganic film disposed on the encapsulation organic film.

Provided is a highly reliable display device that does not easily cause a wiring or an interlayer insulating layer to be cracked when being folded. A display device includes a flexible substrate; a plurality of pixels arrayed on the substrate; and a wiring, provided on the substrate, transmitting a signal to drive the plurality of pixels. The wiring includes a first conductive layer having an opening pattern at least in a partial area thereof.

The application provides an OLED device, a manufacturing method thereof, and a display device, which reduce or eliminate color cast in an image displayed by an existing OLED device due to different lifetimes of organic materials for light emitting layers emitting light of different colors in the OLED device. In the OLED device, a luminous efficiency regulator is disposed between a cathode and a light emitting layer of at least one sub-pixel, and a vibration characteristic peak of the luminous efficiency regulator falls within a wavelength range of light emitted from the corresponding light emitting layer, such that attenuation rates of lighting luminance of the light emitting layers emitting light of different colors are kept consistent with each other over time.

An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a thin film transistor comprising an active layer, a gate electrode, a source electrode, and a drain electrode. A first insulating layer is formed at least between the active layer and the gate electrode and a second insulating layer formed at least between the gate, source, and drain electrodes. The OLED display also includes a third insulating layer covering the source and drain electrodes and a pixel electrode including a first portion formed in first and second openings respectively defined in the second and third insulating layers and a second portion formed outside of the second opening. A pixel defining layer is formed over the second portion of the pixel electrode and the third insulating layer and has a third opening. The third opening has an area greater than that of the second opening.

The present invention discloses a thin-film light-emitting device including a charge generating junction layer and a method of fabricating the thin-film light-emitting device. The thin-film light-emitting device including a charge generating junction layer according to one embodiment of the present invention includes a negative electrode; at least one light-emitting unit formed on the negative electrode and including a charge generating junction layer, an electron injection/transport layer, a thin-film light-emitting layer, and a hole injection/transport layer in a sequential order; and a negative electrode formed on the light-emitting unit. In the thin-film light-emitting device of the present invention, the charge generating junction layer has a layer-by-layer structure in which a p-type semiconductor layer and an n-type semiconductor layer are formed, and the concentration of oxygen vacancies at the interface between the p-type and n-type semiconductor layers is adjusted by annealing the n-type semiconductor layer.

The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, where the multilayer emissive ambipolar channel includes, among various layers, a layer of a p-type semiconductor material comprising a benzothieno-benzothiophene compound, and/or a layer of an emissive material comprising a blend material that includes an organic carbazole derivative as the host matrix compound and an iridium complex as the guest emitter.

The present invention discloses a thin-film light-emitting device including a charge generating junction layer and a method of fabricating the thin-film light-emitting device. The thin-film light-emitting device including a charge generating junction layer according to one embodiment of the present invention includes a negative electrode; at least one light-emitting unit formed on the negative electrode and including a charge generating junction layer, an electron injection/transport layer, a thin-film light-emitting layer, and a hole injection/transport layer in a sequential order; and a negative electrode formed on the light-emitting unit. In the thin-film light-emitting device of the present invention, the charge generating junction layer has a layer-by-layer structure in which a p-type semiconductor layer and an n-type semiconductor layer are formed, and the concentration of oxygen vacancies at the interface between the p-type and n-type semiconductor layers is adjusted by annealing the n-type semiconductor layer.