Devices having multiple multicomponent emissive layers are provided, where each multicomponent EML includes at least three components. Each of the components in each EML is a host material or an emitter. The devices have improved color stability and relatively high luminance.

Described herein are devices and methods related to fabrication of organic electroluminescent devices and related components. In certain embodiments, devices and methods for fabricating OLED panels on substrates with non-uniform reflection or un-even surfaces require that the non-uniform features are arranged in a way such that they are not presented in the region where photolithography features are needed. In certain embodiments, where precision processing such as photolithography features are needed, the substrate is designed to be flat.

The present disclosure provides a light emitting device and a display apparatus. The light emitting device includes: a substrate; a first electrode, a functional layer and a second electrode which are sequentially arranged on the substrate, where the functional layer at least includes a light emitting layer, a dielectric layer is arranged between at least one of the first electrode and the second electrode and the functional layer, metal nanoparticles are arranged in the dielectric layer, and a localized plasmon resonance frequency of the metal nanoparticles is matched with a wavelength of light emitted by the light emitting layer.

A method of fabricating a perovskite light emitting device is provided. In one embodiment, the method comprises the steps of: providing a substrate; providing a first electrode disposed over the substrate; providing a bank structure disposed over the substrate, wherein the bank structure is patterned so as to define at least one sub-pixel on the substrate; providing a first transport layer ink, wherein the first transport layer ink comprises at least one solvent and at least one first charge transport material mixed in the at least one solvent; depositing the first transport layer ink into the at least one sub-pixel over the first electrode using a method of inkjet printing; vacuum drying the first transport layer ink inside a vacuum drying chamber to assemble a first transport layer over the first electrode in the at least one sub-pixel; annealing the first transport layer; providing a perovskite ink, wherein the perovskite ink comprises at least one solvent and at least one perovskite light emitting material mixed in the at least one solvent; depositing the perovskite ink into the at least one sub-pixel over the first transport layer using a method of inkjet printing; vacuum drying the perovskite ink inside a vacuum drying chamber to assemble a perovskite emissive layer over the first transport layer in the at least one sub-pixel; annealing the perovskite emissive layer; and depositing a second electrode over the perovskite emissive layer using a method of vapour deposition. Perovskite light emitting devices and displays fabricated using the provided method are also provided.

A light-emitting element includes a cathode, an anode, a light-emitting layer, a first layer, a second layer, and a third layer. The first layer is provided between the cathode and the light-emitting layer. The second layer is provided between the light-emitting layer and the third layer and includes a region in contact with the third layer. The third layer is provided between the second layer and the anode and includes a region in contact with the anode. The first layer and the third layer each include an alkali metal or an alkaline earth metal. The second layer includes a material that has a function of transporting an electron.

Two-terminal electronic devices, such as photodetectors, photovoltaic devices and electroluminescent devices, are provided. The devices include a first electrode residing on a substrate, wherein the first electrode comprises a layer of metal; an I-layer comprising an inorganic insulating or broad band semiconducting material residing on top of the first electrode, and aligned with the first electrode, wherein the inorganic insulating or broad band semiconducting material is a compound of the metal of the first electrode; a semiconductor layer, preferably comprising a p-type semiconductor, residing over the I-layer; and a second electrode residing over the semiconductor layer, the electrode comprising a layer of a conductive material. The band gap of the material of the semiconductor layer, is preferably smaller than the band gap of the I-layer material. The band gap of the material of the I-layer is preferably greater than 2.5 eV.

The invention provides a light emitting device, comprising: a first electrode; a second electrode; a light emitting layer disposed between the first electrode and the second electrode, wherein the light emitting layer comprises an emitting material having a first triplet energy level (T1); and an exciton quenching layer disposed between the light emitting layer and the second electrode, wherein the exciton quenching layer comprises a non-emitting quenching material having a second triplet energy level (T1); wherein the exciton quenching layer is disposed adjacent to the light emitting layer; wherein the emitting material emits by phosphorescence or delayed fluorescence; and wherein the first triplet energy level (T1) is higher than the second triplet energy level (T1). Methods of making the same are also provided.

A light-emitting substrate includes a base; a first material layer and a second material layer that are disposed on the base, and an etch stop layer between the first material layer and the second material layer. The first material layer is closer to the base than the second material layer. The second material layer includes a plurality of patterns, and each pattern and the first material layer have an overlapping region therebetween. The etch stop layer includes at least portions in respective overlapping regions. A portion of the etch stop layer located in each overlapping region is in contact with the first material layer and the second material layer. Energy level(s) of the portion of the etch stop layer located in each overlapping region are matched with energy levels of the first material layer and the second material layer at corresponding positions.

A display device includes a first bank and a second bank spaced apart from each other on a substrate, at least one semiconductor layer disposed between the first bank and the second bank, a first electrode disposed on the first bank and electrically connected to a part of the at least one semiconductor layer, an organic functional layer disposed on another part of the semiconductor layer and comprising at least an organic light emitting layer, and a second electrode disposed on the organic functional layer.

A new series of iptycene derivatives as ligands for metal complexes that are useful as phosphorescent emitters for incorporation into OLEDs are disclosed. Provided are compositions that include a compound including a chemical group of Formula I ##STR00001##
wherein (1) the chemical group of Formula I is included as at least one of the substituents in a bidentate ligand forming the metal complex, or (2) when the substituents in a bidentate ligand forming the metal complex are attached to a six-membered ring, at least one of the such substituents join adjacent substituents and fuse into the six-membered ring attached thereto to form a chemical group having Formula I.