Patent classifications
H10K2102/341
Light-emitting display device and method of manufacturing the same
A light-emitting display device includes an organic layer formed to be divided between adjacent subpixels through a change in structure of a bank without the provision of an additional construction, whereby it is possible to prevent lateral leakage of current.
OLED display panel having barrier control line
A display panel includes: a substrate; a first electrode layer disposed on one side of the substrate; a pixel definition layer with a plurality of opening structures disposed on one side of the first electrode layer facing away from the substrate, where the opening structure exposes part of first electrodes. The barrier control gate is then disposed on the pixel definition layer. The first-type carrier layer, then is the light-emitting layer, the second-type carrier layer, and finally the second electrode layer, are sequentially deposit on the display panel as formed above.
DISPLAY DEVICE INCLUDING AN ANISOTROPIC CONDUCTIVE FILM
A display device includes a display panel having a display region and a pad region. A pad portion is disposed in the pad region. A circuit substrate is electrically connected to the pad portion. An anisotropic conductive film is interposed between the pad portion and the circuit substrate. The pad portion includes a first pad of which a lateral side and a Y axis form a first angle greater than 0°. The anisotropic conductive film includes conductive particles. The conductive particles are disposed at vertices of an imaginary quadrangle having a length of a first diagonal line shorter than a length of a second diagonal line when viewed front above. The second diagonal line and the Y axis form a second angle greater than 0°. The first angle and the second angle are acute angles. The first angle is greater than the second angle.
LIGHT EMITTING DEVICE AND ELECTRONIC EQUIPMENT INCLUDING A LIGHT REFLECTION LAYER, AN INSULATION LAYER, AND A PLURALITY OF PIXEL ELECTRODES
A light emitting device includes a transistor, a light reflection layer, a first insulation layer that includes a first layer thickness part, a second layer thickness part, and a third layer thickness part, a pixel electrode that is provided on the first insulation layer, a second insulation layer that covers a peripheral section of the pixel electrode, a light emission functional layer, a facing electrode, and a conductive layer that is provided on the first layer thickness part. The pixel electrode includes a first pixel electrode which is provided in the first layer thickness part, a second pixel electrode which is provided in the second layer thickness part, and a third pixel electrode which is provided in the third layer thickness part. The first pixel electrode, the second pixel electrode, and the third pixel electrode are connected to the transistor through the conductive layer.
Display Device
Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. Since a high potential supply line and a low potential supply line overlap each other with a protective film formed of an inorganic insulation material interposed therebetween, short-circuiting of the high potential supply line and the low potential supply line may be prevented.
DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
A display device includes: first pixels which include a first pixel branch line extending in a first direction at one side portion and a first common branch line extending in the first direction at the other side portion which is opposite to the one side portion; second pixels which include a second common branch line extending in the first direction at the one side portion and a second pixel branch line extending in the first direction at the other side portion which is opposite to the one side portion; a first luminous element between the first pixel branch line and the first common branch line; and a second luminous element between the second common branch line and the second pixel branch line, wherein the first pixel and the second pixel are disposed in a second direction which intersects the first direction.
Display Device
Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. Since a high potential supply line and a low potential supply line overlap each other with a protective film formed of an inorganic insulation material interposed therebetween, short-circuiting of the high potential supply line and the low potential supply line may be prevented.
DISPLAY DEVICE
In view of the problem that a reduced thickness of an EL film causes a short circuit between an anode and a cathode and malfunction of a transistor, the invention provides a display device that has a light emitting element including an electrode and an electroluminescent layer, a wire electrically connected to the electrode of the light emitting element, a transistor provided with an active layer including a source, a drain and a channel forming region, and a power supply line electrically connected to one of the source and the drain of the transistor, wherein the wire is electrically connected to the other of the source and the drain of the transistor, and the width of a part of the electrode in the vicinity of a portion where the electrode is electrically connected to the wire is smaller than that of the electrode in the other portion.
LIGHT EMITTING DEVICE AND ELECTRONIC EQUIPMENT INCLUDING A LIGHT REFLECTION LAYER, AN INSULATION LAYER, AND A PLURALITY OF PIXEL ELECTRODES
A light emitting device includes a transistor, a light reflection layer, a first insulation layer that includes a first layer thickness part, a second layer thickness part, and a third layer thickness part, a pixel electrode that is provided on the first insulation layer, a second insulation layer that covers a peripheral section of the pixel electrode, a light emission functional layer, a facing electrode, and a conductive layer that is provided on the first layer thickness part. The pixel electrode includes a first pixel electrode which is provided in the first layer thickness part, a second pixel electrode which is provided in the second layer thickness part, and a third pixel electrode which is provided in the third layer thickness part. The first pixel electrode, the second pixel electrode, and the third pixel electrode are connected to the transistor through the conductive layer.
Display Device
Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. A second source electrode of the second thin-film transistor and a second gate electrode of the second thin-film transistor overlap each other with an upper interlayer insulation film interposed therebetween so as to form a first storage capacitor.