Disclosed are an organic light emitting display device and lighting apparatus for vehicles using the same. The organic light emitting display device includes a first layer including a first organic layer and a first emission layer on a first electrode, a second layer including a second emission layer and a second organic layer on the first layer, a second electrode on the second layer, and a third organic layer between the first layer and the second layer. A thickness of the first emission layer is equal to or greater than a thickness of each of the first organic layer and the second organic layer.

The present disclosure relates to a light-emitting diode including a first electrode and a second electrode facing each other; an electron transfer layer between the first electrode and the second electrode; and a light emitting material between the first electrode and the second electrode, wherein the electron transfer layer consists of anisotropic nanorods, and the long axes of the anisotropic nanorods are arranged at an angle of about 20 degrees to about 90 degrees with respect to an interface with an adjacent layer into which electrons are injected.

A quantum dot device includes: a first electrode and a second electrode facing each other; a quantum dot layer between the first electrode and the second electrode, and an electron auxiliary layer between the quantum dot layer and the second electrode, the electron auxiliary layer including a first nanoparticle and a second nanoparticle which is larger than the first nanoparticle, wherein a work function of the first electrode is greater than a work function of the second electrode, and wherein a difference between a lowest unoccupied molecular orbital energy level of the quantum dot layer and a lowest unoccupied molecular orbital energy level of the electron auxiliary layer is less than about 1.1 electronvolts.

The disclosure provides an OLED device and a manufacturing method thereof to improve structures of conventional OLED devices. Auxiliary cathodes are manufactured on spacers instead of a cathode layer. As a result, widths of the auxiliary cathodes may be precisely controlled, IR drop can be reduced, and quality of the OLED device can be prevented from being affected because of an overly wide auxiliary cathode.

A phase-transition optical isomer compound is described, a transparent EL display device including the phase-transition optical isomer compound and a method of fabricating the EL display device, where a phase of the phase-transition optical isomer compound is transited by light irradiation and a second electrode of the EL display device is selectively deposited without a masking process.

A method of fabricating a flexible organic light-emitting diode (OLED) display panel, the method comprising the steps of: step S1, providing a rigid substrate on which a flexible base is formed; step S2, forming a thin film transistor array layer on the flexible base; step S3, forming an OLED display unit on the thin film transistor array layer; step S4, forming an encapsulation layer on the OLED display unit; step S5, forming a protective layer on the encapsulation layer, wherein the protective layer is adhered to a surface of the encapsulation layer away from the OLED display unit by a thermal sensitive adhesive; step S6, peeling off the rigid substrate, and completing a support film to be attached under the flexible base; step S7, removing the protective layer; and step S8, forming a protective cover on the encapsulation layer.

A quantum dot device includes: a first electrode and a second electrode facing each other; a quantum dot layer between the first electrode and the second electrode, and an electron auxiliary layer between the quantum dot layer and the second electrode, the electron auxiliary layer including a first nanoparticle and a second nanoparticle which is larger than the first nanoparticle, wherein a work function of the first electrode is greater than a work function of the second electrode, and wherein a difference between a lowest unoccupied molecular orbital energy level of the quantum dot layer and a lowest unoccupied molecular orbital energy level of the electron auxiliary layer is less than about 1.1 electronvolts.

The present invention is directed to an ink composition for forming an organic semiconductor layer, wherein the ink composition comprises: —at least one p-type dopant comprising electron withdrawing groups; —at least one first auxiliary compound, wherein the first auxiliary compound is an aromatic nitrile compound, wherein the aromatic nitrile compound has about ≥1 to about ≤3 nitrile groups and a melting point of about <100° C., wherein the first auxiliary compound is different from the p-type dopant; and wherein the electron withdrawing groups are fluorine, chlorine, bromine and/or nitrile.

The present disclosure provides a light emitting device including: a first electrode; a first light emitting layer on a side of the first electrode; an N-type charge generation layer on a side of the first light emitting layer distal to the first electrode; a P-type charge generation layer on a side of the N-type charge generation layer distal to the first light emitting layer; a second light emitting layer on a side of the P-type charge generation layer distal to the N-type charge generation layer; and a second electrode on a side of the second light emitting layer distal to the P-type charge generation layer. The N-type charge generation layer includes a host material which has a lowest unoccupied molecular orbital energy level less than or equal to −2.9 and a glass transition temperature greater than 130° C.

A method for fabricating an OLED using a mixture that is an evaporation source for a vacuum deposition process includes providing a container that contains the mixture, providing a substrate having a first electrode disposed thereon, depositing an organic layer over the first electrode by evaporating the mixture in the container in a high vacuum deposition tool, and depositing a second electrode over the organic layer.