The present disclosure relates to a substrate that includes a substrate body and a thermoelectric cooler embedded in the substrate body. The thermoelectric cooler includes a top-side plate with an element-contact pad and a bottom-side plate. The element-contact pad is on a top surface of the top-side plate, which faces a same direction as a top surface of the substrate body and is exposed to the external space of the substrate body. The bottom-side plate is below the top-side plate and close to a bottom surface of the top-side plate. Herein, the element-contact pad is configured to accommodate attachment of a heat-generating electrical element. The top-side plate is configured to change temperature of the heat-generating electrical element, and the bottom-side plate is configured to transfer heat to or absorb heat from the bottom surface of the substrate body.

An integrated circuit (IC) package comprising an IC die, the IC die having a first surface and an opposing second surface. The IC die comprises a semiconductor material. The first surface comprises an active layer. A thermoelectric cooler (TEC) comprising a thermoelectric material is embedded within the IC die between the first surface and the second surface and adjacent to the active layer. The TEC has an annular shape that is substantially parallel to the first and second surfaces of the IC die. The thermoelectric material is confined between an outer sidewall along an outer perimeter of the TEC and an inner sidewall along an inner perimeter of the TEC. The outer and inner sidewalls are substantially orthogonal to the first and second surfaces of the IC die.

An integrated circuit (IC) package comprising an IC die, the IC die having a first surface and an opposing second surface. The IC die comprises a semiconductor material. The first surface comprises an active layer. A thermoelectric cooler (TEC) comprising a thermoelectric material is embedded within the IC die between the first surface and the second surface and adjacent to the active layer. The TEC has an annular shape that is substantially parallel to the first and second surfaces of the IC die. The thermoelectric material is confined between an outer sidewall along an outer perimeter of the TEC and an inner sidewall along an inner perimeter of the TEC. The outer and inner sidewalls are substantially orthogonal to the first and second surfaces of the IC die.

A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal and an output electrical terminal electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal and an output electrical terminal electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

A black silicon carbide ceramic based thermoelectric photodetector, and a thermoelectric optical power meter/thermoelectric optical energy meter using same. The black silicon carbide ceramic based thermoelectric photodetector comprises a thermal conduction plate (21) made of a black silicon carbide ceramic, wherein the surface of one side of the thermal conduction plate (21) is an optical absorption surface (211); and a thermopile (22) or a series connection conductive metal layer (302) is arranged on the surface of either side of the thermal conduction plate (21) to constitute the thermoelectric photodetector. In the thermoelectric photodetector, the black silicon carbide ceramic is used as both the thermal conduction plate (21) and a light absorber, and is directly combined with the thermopile (22) or the series connection conductive metal layer (302) to constitute the thermoelectric photodetector, thereby simplifying the structure of the thermoelectric photodetector.

A thermoelectric conversion material includes a base material that is a semiconductor having Si and Ge as constituent elements, a first additive element that is different from the constituent elements, has a vacant orbital in a d or f orbital located inside an outermost shell thereof, and forms a first additional level in a forbidden band of the base material, and oxygen. The oxygen content ratio is 6 at % or less.

A thermoelectric generator system including: a first surface having a first material configured to undergo a phase change at a first temperature; an actuator configured to retract the first material from contacting a heat source upon the heat source reaching a predetermined temperature higher than the first temperature; and a thermoelectric generator having a hot side and a cold side, the first material being on the hot side. The thermoelectric generator system can further include a second material configured to undergo a phase change at a second temperature, the second temperature being lower than the first temperature, the second material being on the cold side of the thermoelectric generator.

A cooling device for integrated circuits. The device includes: a plurality TEC cooling cells arranged in an array, wherein each of the cells includes a controller coupled to at least one TEC device; and a single power connector that provides power to all the cells in the array. The controller of each cell in the array is operable to control the at least one TEC it is coupled to with power received from the single power connector.

An integrated combustor-thermoelectric generator and method for producing electrical power and/or for operating a pneumatic or electric device. The apparatus includes a burner tube, a tubular heat exchanger extending along and around the burner tube, a plurality of thermoelectric generators disposed along sides of the heat exchanger, and a heat sink on an opposite side of the thermoelectric generators from the burner and heat exchanger. The thermoelectric generators can be paired with an electric valve or a DC air compressor for operating a pneumatic device by directing heated gases from the combustor through the heat exchanger to thermoelectric couples and/or modules for powering the air compressor. The thermoelectric generator and DC compressor can be installed to a natural gas source at a well pad for operating a pneumatic device at the well pad.