A semiconductor structure comprises one or more semiconductor devices, each of the semiconductor devices having two or more electrical connections; one or more first conductors connected to a first electrical connection on the semiconductor device, the first conductor comprising a first material having a positive Seebeck coefficient; and one or more second conductors connected to a second electrical connection on the semiconductor device, the second conductor comprising a second material having a negative Seebeck coefficient. The first conductor and the second conductor conduct electrical current through the semiconductor device and conduct heat away from the semiconductor device.

In described examples, an integrated circuit containing CMOS transistors and an embedded thermoelectric device may be formed by forming active areas which provide transistor active areas for an NMOS transistor and a PMOS transistor of the CMOS transistors and provide n-type thermoelectric elements and p-type thermoelectric elements of the embedded thermoelectric device. Stretch contacts with lateral aspect ratios greater than 4:1 are formed over the n-type thermoelectric elements and p-type thermoelectric elements to provide electrical and thermal connections through metal interconnects to a thermal node of the embedded thermoelectric device. The stretch contacts are formed by forming contact trenches in a dielectric layer, filling the contact trenches with contact metal and subsequently removing the contact metal from over the dielectric layer. The stretch contacts are formed concurrently with contacts to the NMOS and PMOS transistors.

A semiconductor device and method of making same are disclosed. In some embodiments, a method includes: forming a first thermoelectric conduction leg on a substrate; forming a second thermoelectric conduction leg on the substrate to be aligned with the first thermoelectric conduction leg along a same row; forming at least one intermediate thermoelectric conduction structure on an end of the second thermoelectric conduction leg; forming a contact structure to couple the first and second thermoelectric conduction legs via the at least one intermediate thermoelectric conduction structure; and recessing the substrate to form at least one trench substantially adjacent to a respective side edge of either the first thermoelectric conduction leg or the second thermoelectric conduction leg.

A multi-core thermocouple includes a plurality of wires, an insulation core surrounding the plurality of wires, a sheath surrounding the insulation core, and a plurality of electrical junctions. The plurality of electrical junctions may include a first electrical junction formed between a first wire of the plurality of wires and the sheath at a first axial mid-section of the multi-core thermocouple, the first electrical junction including a first swaged axial mid-section of the sheath and a second electrical junction formed between a second wire of the plurality of wires and the sheath at a second, different axial mid-section of the multi-core thermocouple, the second electrical junction including a second swaged axial mid-section of the sheath.

An active cooling structure, comprising a non-superconducting layer, a superconducting layer, and an array of Superconductor-Insulator-Normal Metal (NIS) tunnel junctions. The non-superconducting layer may comprise a plurality of non-superconducting traces. The superconducting layer may comprise a plurality of superconducting traces. The array of Superconductor-Insulator-Normal Metal (NIS) tunnel junctions may be located between the plurality of non-superconducting traces and the plurality of superconducting traces.

Differential thermoelectric devices are provided for monitoring a change of areal thermal energy dissipation rate and surface temperature profile. The devices include a through electrode connecting to different sets of thermoelectric elements at different regions of the device. A sensing circuitry is electrically connected to the thermoelectric elements to measure a voltage output.

A TEG system is attached to a rotating shaft and generates electricity from radiant energy that is substantially radiatively transmitted through the atmosphere from a stationary source to the TEG system that is rotating with the shaft. The rotation of the shaft provides cooling to the TEG system, but not heat energy. The TEG system includes at least one TEG, each TEG equipped with an energy receiving and heat containment window and an energy conversion system in combination with controlled convection cooling enhanced by an airflow moving in response to the rotation of the rotating shaft. Individual TEGs having controlled convection cooling also are described.

A circuit includes a thermoelectric structure and an energy device. The thermoelectric structure includes a wire and p-type and n-type regions positioned on a front side of a substrate, the wire configured to electrically couple the p-type region to the n-type region, a first via configured to thermally couple the p-type region to a first power structure on a back side of the substrate, and a second via configured to thermally couple the n-type region to a second power structure on the back side of the substrate. The energy device is electrically coupled to each of the first and second power structures.

A thermal chamber includes a cavity that is enclosed by sides and one or more ports that expose the cavity within the thermal chamber. Each of the one or more ports is configured to receive a temperature control component having a solid physical structure and configured to transfer thermal energy to and from an electrical device exposed via the cavity. The thermal chamber includes a bottom side open area of the thermal chamber located below the one or more ports. The bottom side open area is configured to allow the temperature control component to contact the electrical device that is exposed via the bottom side open area.

A thermoelectric transducer includes a substrate, a thermoelectric film on the substrate, a first electrode on the substrate, and a second electrode on the substrate, the second electrode being different from the first electrode in work function. The first electrode and the second electrode are in contact with the same side of the thermoelectric film. The outer edge of the thermoelectric film is located inner than the outer edge of the substrate.