A process for producing a microbolometer including a vanadium-oxide-based sensitive material containing an additional chemical element chosen from arsenic, germanium, silicon and phosphorus, the process including: determining an effective amount of the additional chemical element from which the modified compound, having undergone a step of exposure to a temperature T.sub.r for a time Δt.sub.r, exhibits an electrical resistivity ρ.sub.a|r at room temperature that is higher than 10% of its native value; producing the sensitive material in a thin layer, this material being formed from the modified compound having an amount of the additional chemical element that is greater than or equal to the effective amount; and exposing the sensitive material to the temperature T.sub.r for the time Δt.sub.r.

Connection with a wiring structure can be reliably achieved, whereby a semiconductor sensor device and a semiconductor sensor device manufacturing method with increased reliability are provided. A semiconductor sensor device in which a multiple of signal lines and a sensor detection portion are disposed includes a conductive film, disposed on a substrate, that configures the signal lines and whose upper face is exposed by an aperture portion of a width smaller than a width of the signal lines, a conductive member formed on the conductive film and electrically connected to the conductive film via the aperture portion, and a wiring structure, formed on an upper face of the conductive member, of an air bridge structure that connects the signal lines or the signal lines and the sensor detection portion, wherein an upper surface of the conductive member is in contact with the wiring structure, and a side face is exposed.

A method and device which can receive and identify electromagnetic radiation in the terahertz (THz) frequency range. The device has a combination of material and geometric parameters that are unique and tunable, enabling resonating frequencies for spectral selectivity in the THz range (0.1-15) with ultra-narrow channel widths (0.01-0.10 THz) full width at half maximum (FWHM). Dependent upon configuration, the device may be employed as a large area resonator to collect weak or diffuse signals or as a constituent of an array able to take pictures within the spectrum for which they are sensitive.

A terahertz detector and a method of manufacturing a terahertz detector, wherein the terahertz detector including a substrate (2) and at least one detection unit. Each detection unit includes: a channel material (1) arranged on the substrate, two electrodes (3, 4) respectively in ohmic contact with both ends of the channel material (1) in a longitudinal direction, and a three-dimensional grapheme (5) in direct or indirect thermal contact with the channel material (1).

An electrocaloric element for a heat transfer system includes an electrocaloric material of a copolymer of (i) vinylidene fluoride, (ii) an addition polymerization monomer selected from tetrafluoroethylene, trifluoroethylene, vinyl fluoride, or combinations thereof, and (iii) a halogenated addition polymerization monomer larger than vinylidene fluoride. It is also provided that: (a) the monomer (ii) includes an addition polymerization monomer smaller than trifluoroethylene, (b) at least one of the addition polymerization monomers (ii) or (iii) is a chiral monomer, and the copolymer includes syndiotactic ordered segments of chiral monomer units, and/or (c) at least one of the addition polymerization monomers (ii) or (iii) comprises chlorine, and the copolymer includes an ordered distribution of monomer units comprising chlorine along the copolymer polymer backbone.

A method and device incorporating the use of Zinc Oxide to generate electrical power directly from heat, with minimal or no complex and inefficient mechanical interventions, by making advantageous use of the abundance and low cost of ZnO and its pyroelectric and thermoelectric properties. ZnO is used as a cheap, under-used material for the purpose of converting thermal energy (heat) directly into usable electricity with none or almost none of the mechanical conversion systems generally in use.

Thermal pattern sensor comprising several pixels located on a substrate, each pixel comprising a pyroelectric capacitance, the pyroelectric capacitance comprising, a layer of porous pyroelectric material located between a first electrically conducting electrode and a second electrically conducting electrode, particles made of a first material at least partially filling the pores of the layer of porous pyroelectric material, the first material being electrically insulating and having pyroelectric properties and a layer made of a second material being placed between the layer made of a pyroelectric material and the second electrode, the second material being electrically insulating and having pyroelectric properties.

A method and device which can receive and identify electromagnetic radiation in the terahertz (THz) frequency range. The device has a combination of material and geometric parameters that are unique and tunable, enabling resonating frequencies for spectral selectivity in the THz range (0.1-15) with ultra-narrow channel widths (0.01-0.10 THz) full width at half maximum (FWHM). Dependent upon configuration, the device may be employed as a large area resonator to collect weak or diffuse signals or as a constituent of an array able to take pictures within the spectrum for which they are sensitive.

Method for manufacturing a device comprising a stack including a first layer comprising electrical conductors electrically insulated from each other, a second electrically conducting layer, a third layer of pyroelectric material, said third layer being arranged between the first layer and the second layer, said method comprising, a) producing said stack on a substrate, the material of the third layer not being pyroelectric at this stage, b) producing a polarisation layer made of epoxy glue in electrical contact with the electrical conductors in the first layer, c) applying polarisation voltage to said third layer such that its material becomes pyroelectric, d) exposing the polarisation layer in its second state by ultraviolet radiation so as to make it at least partly electrically insulating.

The present invention belongs to the technical field of energy conversion devices, which provides an rGO-PEI/PVDF pyroelectric thin film, and the method for preparing the film, as well as a self-energized bracelet produced based on such film, which utilizes the reduced graphite oxide after modified by polyethyleneimine (PEI) (rGO-PEI) as photothermal conversion material, and the silver-plated polarized polyvinylidene fluoride (PVDF) film as pyroelectric conversion material. The rGO-PEI photothermal material is fixed to the surface of the PVDF through a transparent film, and prepare the self-energized bracelet based on it. The obtained bracelet has an output power of up to 21.3 mW/m2, and does not require additional mechanical devices to control the temperature during operation, wherein, the thermoelectric conversion, rectification, storage and application are realized through temperature fluctuation produced by absorbing sunlight during doing outdoor sports, utilizing temperature difference of air flow, and sweeping gesture, etc.