H10N15/15

Thermal pattern sensor with pyroelectric capacitance and hard protective layer

Thermal pattern sensor comprising several pixels arranged on a substrate, each pixel including at least: a pyroelectric capacitance formed by at least one portion of pyroelectric material arranged between at least one lower electrode and at least one upper electrode, with the lower electrode arranged between the substrate and the portion of pyroelectric material, a dielectric layer such that the upper electrode is arranged between the portion of pyroelectric material and the dielectric layer, a heating element including at least one deposition of electrically conductive particles and such that the dielectric layer is arranged between the upper electrode and the heating element, a protective layer arranged between the dielectric layer and the heating element and including at least one material of which the Shore A hardness is greater than or equal to around 60.

Structure using ferroelectric film and sensor using said structure

Provided are a structure including: a substrate; a first layer provided on the substrate; a second layer provided on the first layer; and a third layer provided on the second layer, in which the first layer is a layer containing a compound represented by a chemical formula MIn.sub.2O.sub.4 using M as a metal element, the second layer is a metal layer having a face-centered cubic structure, and the third layer is a ferroelectric film, and a sensor using the structure.

CIRCUIT AND METHOD FOR DETECTING PRESSURE SIGNAL WITH SIGNAL DUE TO PYROELECTRICITY IN PIEZOELECTRIC MATERIAL BEING SUPPRESSED

The present invention relates to a pressure signal detection circuit and a pressure signal detection method in which a pyroelectric signal from a piezoelectric film is suppressed. More specifically, the pressure signal detection circuit receives input of an input signal from a piezoelectric film, differentiates the input signal for signal component analysis of the input signal, outputs the signal analysis value of the input signal based on the differential value, removes offset of the input signal by using the signal component analysis value, integrates the input signal, and outputs a pressure input signal value from which a heat input signal value is removed. With this structure, the present invention reduces the influence on the thermal reaction as compared with prior art, while enabling pressure signal detection at a higher speed. The present invention is also capable of outputting a signal having a superior thermal reaction attenuation effect compared with the use of an additional step for heat absorption when a piezoelectric film is produced.

MICROMECHANIC STRUCTURE AND METHOD FOR MAKING THE MICROMECHANIC STRUCTURE
20200199735 · 2020-06-25 ·

A micromechanic structure includes a substrate, an adhesion layer arranged on the substrate, a first metal layer arranged on the adhesion layer, a ferroelectric layer arranged on the first metal layer and including lead zirconate titanate, and a second metal layer arranged on the ferroelectric layer, wherein the lead concentration of the ferroelectric layer decreases in a stepped manner with increasing distance from the first metal layer such that the ferroelectric layer includes a plurality of partial layers in which the lead concentration is respectively uniform.

METHOD OF MANUFACTURING A DEVICE COMPRISING A MATERIAL ACQUIRING AN ELECTRICAL PROPERTY AFTER HAVE BEEN SUBJECTED TO AN ELECTRIC POLARISATION

Method for manufacturing a device comprising a stack including a first layer comprising electrical conductors electrically insulated from each other, a second electrically conducting layer, a third layer of pyroelectric material, said third layer being arranged between the first layer and the second layer, said method comprising, a) producing said stack on a substrate, the material of the third layer not being pyroelectric at this stage, b) producing a polarisation layer made of epoxy glue in electrical contact with the electrical conductors in the first layer, c) applying polarisation voltage to said third layer such that its material becomes pyroelectric, d) exposing the polarisation layer in its second state by ultraviolet radiation so as to make it at least partly electrically insulating.

ELECTROCALORIC HEAT TRANSFER SYSTEM WITH PATTERNED ELECTRODES

An electrocaloric module includes an electrocaloric element that includes an electrocaloric film, a first electrode on a first surface of the electrocaloric film, and a second electrode on a second surface of the electrocaloric film. A support is attached along an edge portion of the electrocaloric film, leaving a central portion of the electrocaloric film unsupported film. At least one of the first and second electrodes includes a patterned disposition of conductive material on the film surface. The electrocaloric module also includes a first thermal connection configured to connect to a first thermal flow path between the electrocaloric element and a heat sink, a second thermal connection configured to connect to a second thermal flow path between the electrocaloric element and a heat source, and a power connection connected to the first and second electrodes and configured to connect to a power source.

ANTIBACTERIAL ELECTRIC CHARGE GENERATION YARN, METHOD FOR MANUFACTURING ANTIBACTERIAL ELECTRIC CHARGE GENERATION YARN, AND ANTIBACTERIAL CLOTH

An antibacterial electric charge generation yarn meets requirements (a) to (e) mentioned below simultaneously and suppresses proliferation of bacteria by electric charge generated upon deformation of the yarn: (a) a main component of the yarn is polylactic acid.; (b) the yarn is twisted; (c) the yarn has a double torque of 50 T/50 cm or less; (d) the yarn has a single fiber fineness of 0.05 to 5 dtex; and (e) the number of filaments in the yarn is 10 to 400.

SEMICONDUCTOR SENSOR DEVICE AND SEMICONDUCTOR SENSOR DEVICE MANUFACTURING METHOD

Connection with a wiring structure can be reliably achieved, whereby a semiconductor sensor device and a semiconductor sensor device manufacturing method with increased reliability are provided. A semiconductor sensor device in which a multiple of signal lines and a sensor detection portion are disposed includes a conductive film, disposed on a substrate, that configures the signal lines and whose upper face is exposed by an aperture portion of a width smaller than a width of the signal lines, a conductive member formed on the conductive film and electrically connected to the conductive film via the aperture portion, and a wiring structure, formed on an upper face of the conductive member, of an air bridge structure that connects the signal lines or the signal lines and the sensor detection portion, wherein an upper surface of the conductive member is in contact with the wiring structure, and a side face is exposed.

CROSSLINKABLE COMPOSITIONS BASED ON ELECTROACTIVE FLUORINATED COPOLYMERS

The invention relates to crosslinkable compositions based on electroactive fluorinated copolymers, to crosslinked films obtained from such compositions and also to a process for preparing these films. The invention also relates to the use of said films as a dielectric layer in various (opto)electronic devices: piezoelectric, ferroelectric or pyroelectric devices.

Process for manufacturing a pyroelectric and/or piezoelectric drive

A process for manufacturing a piezoelectric and/or pyroelectric device comprising a polyvinylidene fluoride film, the process comprising a step of forming at least one portion of a layer of a solution comprising a solvent and a compound comprising polyvinylidene fluoride and a step of irradiating the portion with pulses of at least one ultraviolet radiation. The irradiating step enables the formation of at least two crystalline phases having different orientations.