Patent classifications
H10N30/02
SURFACE ACOUSTIC WAVE DEVICE AND ASSOCIATED PRODUCTION METHOD
A production method for a surface acoustic wave device comprises the following steps: a step of providing a piezoelectric substrate comprising a transducer arranged on the main front face; a step of depositing a dielectric encapsulation layer on the main front face of the piezoelectric substrate and on the transducer; and a step of assembling the dielectric encapsulation layer with the main front face of a support substrate having a coefficient of thermal expansion less than that of the piezoelectric substrate. In additional embodiments, a surface acoustic wave device comprises a layer of piezoelectric material equipped with a transducer on a main front face, arranged on a substrate support of which the coefficient of thermal expansion is less than that of the piezoelectric material. The transducer is arranged in a dielectric encapsulation layer, between the layer of piezoelectric material and the support substrate.
PIEZOELECTRIC ACOUSTIC RESONATOR MANUFACTURED WITH PIEZOELECTRIC THIN FILM TRANSFER PROCESS
A bulk acoustic wave (BAW) resonator includes a solidly mounted reflector, for example, a Bragg-type reflector, a piezoelectric layer, and first and second electrodes on first and second surfaces, respectively, of the piezoelectric layer. A filter device or filter system includes at least one BAW resonator. Related methods of fabrication include forming the BAW resonator.
PIEZOELECTRIC ACOUSTIC RESONATOR MANUFACTURED WITH PIEZOELECTRIC THIN FILM TRANSFER PROCESS
A bulk acoustic wave (BAW) resonator includes a solidly mounted reflector, for example, a Bragg-type reflector, a piezoelectric layer, and first and second electrodes on first and second surfaces, respectively, of the piezoelectric layer. A filter device or filter system includes at least one BAW resonator. Related methods of fabrication include forming the BAW resonator.
Electricity generator comprising a magneto-electric converter and method of production
A magneto-electric converter capable of converting a variation in magnetic field into a potential difference between two electrical terminals includes a support layer comprising two electrical terminals; a stack disposed on the support layer of a first layer made from a magnetostrictive material defining the reference plane and of a second layer made from a piezoelectric material having a polarization axis in the plane defined by the second layer, parallel to the reference plane; the second layer comprising electrodes; and a means for electrical connection of the electrodes to the electrical terminals.
Piezoelectric element and method for manufacturing piezoelectric element
This piezoelectric element includes a lower electrode formed on a substrate, a piezoelectric layer formed on the lower electrode, and an upper electrode formed on the piezoelectric layer. The upper electrode includes a first upper electrode layer made of a metal oxide including an amorphous portion at least at a boundary with the piezoelectric layer and a second upper electrode layer formed on the first upper electrode layer.
Mounting structure, ultrasonic device, ultrasonic probe, ultrasonic apparatus, and electronic apparatus
A mounting structure includes a first substrate that has a first surface on which a functional element is provided, a wiring that is provided at a position which is different from a position of the functional element on the first surface, and is connected to the functional element, a second substrate that has a second surface facing the first surface, and a conductor that is provided on the second surface, and is connected to the wiring and the functional element, in which the shortest distance between the functional element and the second substrate is longer than a distance between a position where the wiring is connected to the conductor, and the second substrate.
VIBRATION SENSOR
A vibration sensor according to an embodiment includes a substrate, a convex member, and a piezoelectric element. The substrate includes a first principal surface and a second principal surface. The substrate transmits vibration. The convex member is fixed on the first principal surface. The piezoelectric element is disposed within a second fixing region on the second principal surface. The second fixing region corresponds to, in a planar view, a first fixing region of the substrate on which the convex member is fixed.
Method for manufacturing hermetic sealing lid member
The method manufactures a hermetic sealing lid member used for an electronic component housing package including an electronic component arrangement member on which an electronic component is arranged. The method includes forming a clad material in which a silver brazing layer that contains Ag and Cu and a first Fe layer arranged on the silver brazing layer and made of Fe or an Fe alloy are bonded to each other by roll-bonding a silver brazing plate that contains Ag and Cu and a first Fe plate made of Fe or an Fe alloy to each other and performing first heat treatment for diffusion annealing; softening the clad material by performing second heat treatment; and forming the hermetic sealing lid member in a box shape including a recess portion by bending the softened clad material.
Using piezoelectric electrodes as active surfaces for electroplating process
Microelectromechanical systems (MEMS) mesh-membrane nebulizers are described. The MEMS mesh-membrane nebulizers may include a piezoelectric MEMS mesh membrane. The piezoelectric MEMS mesh membrane may include a piezoelectric active layer patterned with openings for making droplets. One electrode of the piezoelectric MEMS mesh membrane may serve as an electrode for electroplating. Activation of the piezoelectric MEMS mesh membrane may generate droplets suitable for delivery of medicines or other uses.
PIEZOELECTRIC ACOUSTIC RESONATOR WITH DIELECTRIC PROTECTIVE LAYER MANUFACTURED WITH PIEZOELECTRIC THIN FILM TRANSFER PROCESS
A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include a dielectric protection layer (DPL) that protects the piezoelectric layer from etching processes that can produce rough surfaces and reduces parasitic capacitance around the perimeter of the resonator when the DPL’s dielectric constant is lower than that of the piezoelectric layer. The DPL can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, or both.