A semiconductor package structure includes a plurality of transducer devices, a cap structure, at least one redistribution layer (RDL) and a protection material. The transducer devices are disposed side by side. Each of the transducer devices has at least one transducing region, and includes a die body and at least one transducing element. The die body has a first surface and a second surface opposite to the first surface. The transducing region is disposed adjacent to the first surface of the die body. The transducing element is disposed adjacent to the first surface of the die body and within the transducing region. The cap structure covers the transducing region of the transducer device to form an enclosed space. The redistribution layer (RDL) electrically connects the transducer devices. The protection material covers the transducer devices.

A production method for a surface acoustic wave device comprises the following steps: a step of providing a piezoelectric substrate comprising a transducer arranged on the main front face; a step of depositing a dielectric encapsulation layer on the main front face of the piezoelectric substrate and on the transducer; and a step of assembling the dielectric encapsulation layer with the main front face of a support substrate having a coefficient of thermal expansion less than that of the piezoelectric substrate. In additional embodiments, a surface acoustic wave device comprises a layer of piezoelectric material equipped with a transducer on a main front face, arranged on a substrate support of which the coefficient of thermal expansion is less than that of the piezoelectric material. The transducer is arranged in a dielectric encapsulation layer, between the layer of piezoelectric material and the support substrate.

A piezoelectric vibration device that includes a piezoelectric vibrator having excitation electrodes formed thereon; a base having the piezoelectric vibrator on a first surface thereof; outer electrodes formed to continuously extend from the first surface of the base through a side face of the base to a second surface of the base opposite the first surface; and a lid having a recess opening that faces the first surface of the base, the lid being joined to the base to hermetically seal the piezoelectric vibrator in an internal space defined by the recess and the base. An edge portion of a corresponding one of the outer electrodes, formed by the first surface and the side face of the base, is at least partly covered by a covering member having insulating properties.

A MEMS component includes, on a substrate, component structures, contact areas connected to the component structures, metallic column structures seated on the contact areas, and metallic frame structures surrounding the component structures. A cured resist layer is seated on frame structure and column structures such that a cavity is enclosed between substrate, frame structure and resist layer. A structured metallization is provided directly on the resist layer or on a carrier layer seated on the resist layer. The structured metallization includes at least external contacts of the component and being electrically conductively connected both to metallic structures and to the contact areas of the component structures.

A package that includes a first filter comprising a first polymer, a substrate cap, a second filter comprising a second polymer frame, at least one interconnect, an encapsulation layer and a plurality of through encapsulation vias. The substrate cap is coupled to the first polymer frame such that a first void is formed between the substrate cap and the first filter. The second polymer frame is coupled to the substrate cap such that a second void is formed between the substrate cap and the second filter. The at least one interconnect is coupled to the first filter and the second filter. The encapsulation layer encapsulates the first filter, the substrate cap, the second filter, and the at least one interconnect. The plurality of through encapsulation vias coupled to the first filter.

A package that includes a first filter comprising a first polymer, a substrate cap, a second filter comprising a second polymer frame, at least one interconnect, an encapsulation layer and a plurality of through encapsulation vias. The substrate cap is coupled to the first polymer frame such that a first void is formed between the substrate cap and the first filter. The second polymer frame is coupled to the substrate cap such that a second void is formed between the substrate cap and the second filter. The at least one interconnect is coupled to the first filter and the second filter. The encapsulation layer encapsulates the first filter, the substrate cap, the second filter, and the at least one interconnect. The plurality of through encapsulation vias coupled to the first filter.

A piezoelectric element includes a laminate including first and second piezoelectric layers with respective polarization directions in a thickness direction and an elastic layer provided between the first piezoelectric layer and the second piezoelectric layer, first and second terminal electrodes that are provided on an external surface of the laminate, a first detection electrode provided on a positive polar surface of the first piezoelectric layer, a second detection electrode provided on a negative polar surface of the first piezoelectric layer, a third detection electrode provided on a positive polar surface of the second piezoelectric layer, and a fourth detection electrode provided on a negative polar surface of the second piezoelectric layer. The first detection electrode and the fourth detection electrode are connected to the first terminal electrode. The second detection electrode and the third detection electrode are connected to the second terminal electrode.

An elastic wave device includes an elastic wave element that includes first support layers provided on a piezoelectric substrate, a second support layer provided on the piezoelectric substrate so as to surround the first support layers when viewed in a plan view, and a cover member provided on the first support layers and the second support layer, a mounting substrate on which the elastic wave element is mounted, and a mold resin provided on the mounting substrate and sealing the elastic wave element. A thickness of each of the first support layers is less than a thickness of the second support layer. The cover member convexly curves towards the piezoelectric substrate so as to be spaced away from the mounting substrate. A space between the mounting substrate and the cover member is filled with the mold resin.

A piezoelectric actuator array includes a substrate plate with a number of signal leads and at least one common lead, and a number of piezoelectric bodies arranged in a row on one surface of the substrate plate and formed by dividing a common piezoelectric block. The piezoelectric bodies include a number of active bodies each of which has, on a first side of the row, a signal electrode in contact with one of the signal leads and, on an opposite second side of the row, a common electrode in contact with the common lead. The substrate plate has at least one connector lead disposed on the first side of the row and electrically connected to the common lead on the second side of the row. At least one piezoelectric body has a conductive outer surface layer that establishes an electrically conductive path from the connector lead to the common lead.

This hermetic sealing lid member (10) is made of a clad material (20) including a silver brazing layer (21) that contains Ag and Cu and a first Fe layer (22) bonded onto the silver brazing layer and made of Fe or an Fe alloy. The hermetic sealing lid member is formed in a box shape including a recess portion (13) by bending the clad material.