A method for producing a layer of composition AA′BO.sub.3, wherein A consists of at least one element selected from the group consisting of: Li, Na, K, Ca, Mg, Ba, Sr, Pb, La, Bi, Y, Dy, Gd, Tb, Ce, Pr, Nd, Sm, Eu, Ho, Zr, Sc, Ag and Tl, and B consists of at least one element selected from the group consisting of: Nb, Ta, Sb, Ti, Zr, Sn, Ru, Fe, V, Sc, C, Ga, Al, Si, Mn, Zr and Tl, is described. The method includes providing a donor substrate of composition ABO.sub.3, forming a layer of composition ABO.sub.3 by thinning the donor substrate, and exposing the layer of composition ABO.sub.3 to a medium containing ions of an element A′ belonging to the same list of elements as A, A′ being different from A, such that the ions penetrate into the layer of composition ABO.sub.3 to form the layer of composition AA′BO.sub.3.

A method for transferring a piezoelectric layer from a donor substrate onto a support substrate comprises the steps of: a) providing a predetermined splitting area in a piezoelectric donor substrate, b) attaching the piezoelectric donor substrate to a support substrate to form an assembly, and c) detaching the piezoelectric layer from the piezoelectric donor substrate comprising applying an electric field. By using the electric field, the detachment step can be carried out at low temperatures. A detachment chamber for carrying out at least a portion of such a method includes one or two chucks comprising first and/or second electrodes for applying an electric field to a piezoelectric layer.

A ferroelectric material includes a mixed crystal having AlN and at least one nitride of a transition metal. The proportion of the nitride of the transition metal is selected such that a direction of an initial or spontaneous polarity of the ferroelectric material is switchable by applying a switchover voltage. The switchover voltage is below a breakdown voltage of the ferroelectric material.

In some embodiments, a piezoelectric device is provided. The piezoelectric device includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A heating element is disposed over the semiconductor substrate. The heating element is configured to heat the piezoelectric structure to a recovery temperature for a period of time, where heating the piezoelectric structure to the recovery temperature for the period of time improves a degraded electrical property of the piezoelectric device.

In some embodiments, a piezoelectric device is provided. The piezoelectric device includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A heating element is disposed over the semiconductor substrate. The heating element is configured to heat the piezoelectric structure to a recovery temperature for a period of time, where heating the piezoelectric structure to the recovery temperature for the period of time improves a degraded electrical property of the piezoelectric device.

Energy harvesting device comprising: a first layer (1) of electrically conductive textile fabric material; a second layer (2) of electrically conductive textile fabric material; a layer of piezoelectric polymer film (3) arranged between the first (1) and the second (2) electrically conductive textile layers; wherein the piezoelectric polymer film layer (3) is laminated between the first (1) and second (2) electrically conductive textile layer.

A resonant member of a MEMS resonator oscillates in a mechanical resonance mode that produces non-uniform regional stresses such that a first level of mechanical stress in a first region of the resonant member is higher than a second level of mechanical stress in a second region of the resonant member. A plurality of openings within a surface of the resonant member are disposed more densely within the first region than the second region and at least partly filled with a compensating material that reduces temperature dependence of the resonant frequency corresponding to the mechanical resonance mode.

A resonant member of a MEMS resonator oscillates in a mechanical resonance mode that produces non-uniform regional stresses such that a first level of mechanical stress in a first region of the resonant member is higher than a second level of mechanical stress in a second region of the resonant member. A plurality of openings within a surface of the resonant member are disposed more densely within the first region than the second region and at least partly filled with a compensating material that reduces temperature dependence of the resonant frequency corresponding to the mechanical resonance mode.

To provide a piezoelectric body film that can suppress decrease in the piezoelectric constant d31, a method of producing a piezoelectric body film, and a piezoelectric body device. A piezoelectric body film comprising a fluororesin as a piezoelectric material, the fluororesin containing, as a main constituent unit, a repeating unit derived from vinylidene fluoride, a piezoelectric constant d31 of the piezoelectric body film being 20 pC/N or greater, and an extrapolated onset temperature at start of shrinkage determined by TMA measurement being not lower than 90° C. and not higher than 115° C. The difference between piezoelectric constants d31 measured before and after heating the piezoelectric body film at 100° C. for 24 hours relative to the piezoelectric constant d31 before the heating for 24 hours is 20% or less.

A form birefringent optical element includes a structured layer and a dielectric environment disposed over the structured layer. At least one of the structured layer and the dielectric environment includes a nanovoided polymer, the nanovoided polymer having a first refractive index in an unactuated state and a second refractive index different than the first refractive index in an actuated state. Actuation of the nanovoided polymer can be used to reversibly control the form birefringence of the optical element. Various other apparatuses, systems, materials, and methods are also disclosed.