A piezoelectric MEMS microphone comprising a multi-layer sensor that includes at least one piezoelectric layer between two electrode layers, with the sensor being dimensioned such that it provides a near maximized ratio of output energy to sensor area, as determined by an optimization parameter that accounts for input pressure, bandwidth, and characteristics of the piezoelectric and electrode materials. The sensor can be formed from single or stacked cantilevered beams separated from each other by a small gap, or can be a stress-relieved diaphragm that is formed by deposition onto a silicon substrate, with the diaphragm then being stress relieved by substantial detachment of the diaphragm from the substrate, and then followed by reattachment of the now stress relieved diaphragm.

A MEMS component includes, on a substrate, component structures, contact areas connected to the component structures, metallic column structures seated on the contact areas, and metallic frame structures surrounding the component structures. A cured resist layer is seated on frame structure and column structures such that a cavity is enclosed between substrate, frame structure and resist layer. A structured metallization is provided directly on the resist layer or on a carrier layer seated on the resist layer. The structured metallization includes at least external contacts of the component and being electrically conductively connected both to metallic structures and to the contact areas of the component structures.

An ultrasound-on-a-chip device has an ultrasonic transducer substrate with plurality of transducer cells, and an electrical substrate. For each transducer cell, one or more conductive bond connections are disposed between the ultrasonic transducer substrate and the electrical substrate. Examples of electrical substrates include CMOS chips, integrated circuits including analog circuits, interposers and printed circuit boards.

A piezoelectric device includes a body provided with a first region and a second region lined along a first direction. The first region deformably extends/contracts along the first direction. The second region deformably curves in such a manner that one or the other side in a second direction intersecting the first direction curves outward.

Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.

Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.

A method for producing a composite piezoelectric body includes: forming a composite piezoelectric body by filling a non-conductive polymer between a plurality of piezoelectric materials arranged in an array state at predetermined intervals, and polishing one surface of the composite piezoelectric body, from which surface at least the piezoelectric materials and the polymer are exposed, by using an abrasive film in which an abrasive particle is applied to a base film.

A method for forming a pressure sensor includes forming a base of a sapphire material, the base including a cavity formed therein; forming a sapphire membrane on top of the base and over the cavity; forming a lower electrode on top of the membrane; forming a piezoelectric material layer on an upper surface of the lower electrode, the piezoelectric material layer being formed of aluminum nitride (AIN); and forming at least one upper electrode on an upper surface of the piezoelectric material layer.

A stacked film includes an oxide film including a ZrO.sub.2 film, a metal oxide film provided on the oxide film, and a predetermined metal film provided on the metal oxide film and having a single orientation, and the metal oxide film is a PtO film or a PdO film. In the case of this structure, the predetermined metal film has a single orientation, and characteristics of the piezoelectric film such as PZT formed on the predetermined metal film are improved. Therefore, excellent characteristics such as an increase in the driving force due to the piezoelectric film or a reduction in leakage current can be exhibited.

A BAW component, a lamination for a BAW component, and a method for manufacturing a BAW component are provided. A lamination for a BAW component includes a first layer with a first piezoelectric material and a second layer with a second piezoelectric material that is different than the first piezoelectric material. The first and the second piezoelectric material can be Sc doped AlN and AlN, respectively.