A sensor apparatus includes a first of a plurality of layers having a top layer, a bottom layer, and at least one intermediate layer having an electrical conductor layer, each of the top layer, the bottom layer, and the at least one intermediate layer is disposed in direct contact with a respective adjacent layer. A second of the plurality of layers is disposed in direct contact with the first plurality of layers such that the bottom layer of the second plurality of layers is disposed in direct contact with the top layer of the first plurality of layers. The first and second plurality of layers are productive of a piezoelectric voltage absent of an external current producing device and in response to being deformed, and are productive of a change in capacitance in response to being deformed.

Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.

Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.

A micro-electromechanical system (MEMS) device and a method of forming the same, the MEMS device includes a composite substrate, a cavity, a piezoelectric stacking structure and a proof mass. The composite substrate includes a first semiconductor layer, a bonding layer and a second semiconductor layer from bottom to top. The cavity is disposed in the composite substrate, and the cavity is extended from the second semiconductor layer into the first semiconductor layer and not penetrated the first semiconductor layer. The piezoelectric stacking structure is disposed on the composite substrate, with the piezoelectric stacking structure having a suspended region over the cavity. The proof mass is disposed in the cavity to connect to the piezoelectric stacking structure.

A multilayer ultrasonic transducer of an embodiment includes: a plurality of stacked oscillators; external electrodes disposed on outer exposed surfaces of two oscillators disposed in the outermost layers out of the plurality of oscillators; and a plurality of internal electrodes each disposed between two of the plurality of oscillators. There are provided electrode regions in which the plurality of internal electrodes are arranged such that the number of layers of the internal electrodes in a direction in which the oscillators are stacked gradiently increases from an inner region toward an outer peripheral region of the plurality of oscillators, and ultrasonic waves emitted from the plurality of oscillators are focused toward at least the inner region.

A sensor for obtaining downhole data includes a first piezoelectric layer. The sensor also includes a second piezoelectric layer having a trench extending a depth below a surface of the second piezoelectric layer. The sensor also includes an electrode positioned within the trench. The first piezoelectric layer is directly coupled to the second piezoelectric layer.

A sensor for obtaining downhole data includes a first piezoelectric layer. The sensor also includes a second piezoelectric layer having a trench extending a depth below a surface of the second piezoelectric layer. The sensor also includes an electrode positioned within the trench. The first piezoelectric layer is directly coupled to the second piezoelectric layer.

Methods for forming an integrated circuit are provided. Aspects include providing a wafer substrate having an embedded memory area interconnect structure and an embedded non-memory area interconnect structure, the memory area interconnect structure comprising metal interconnects formed within a first interlayer dielectric, recessing a portion of the memory area interconnect structure, forming a bottom electrode contact on the recessed portion of the memory area interconnect structure, forming a bottom electrode over the bottom electrode contact, forming a protective dielectric layer over the non-memory area interconnect structure, and forming memory element stack layers on a portion of the bottom electrode.

At least one silicone layer is applied to a substrate by a method employing laser transfer printing. The method is suitable for producing sensors, actuators and other EAP layer systems. The silicone layer in these systems may serve as an electrically conducting electrode layer or as a dielectric layer. The method may be configured to be continuous and may be combined with various other coating technologies.

A piezoelectric device and a fabricating method thereof, and an electronic device and a controlling method thereof, which relates to the technical field of piezoelectric devices. The piezoelectric device includes: a flexible substrate and a plurality of piezoelectric units that are provided on the flexible substrate and are arranged in an array; each of the plurality of piezoelectric units includes: a first electrode, a piezoelectric component and a second electrode that are sequentially stacked on the flexible substrate; and the piezoelectric component is made from a rigid material. The present disclosure is suitable for the fabrication of piezoelectric devices.