A semiconductor package structure includes a plurality of transducer devices, a cap structure, at least one redistribution layer (RDL) and a protection material. The transducer devices are disposed side by side. Each of the transducer devices has at least one transducing region, and includes a die body and at least one transducing element. The die body has a first surface and a second surface opposite to the first surface. The transducing region is disposed adjacent to the first surface of the die body. The transducing element is disposed adjacent to the first surface of the die body and within the transducing region. The cap structure covers the transducing region of the transducer device to form an enclosed space. The redistribution layer (RDL) electrically connects the transducer devices. The protection material covers the transducer devices.

Disclosed is a sensor for monitoring a composite structure. The sensor includes multiple sensing elements of different sizes, each configured for different respective monitoring tasks. Also disclosed are methods of fabricating the sensor, designing and manufacturing the sensor, and attaching the sensor to the composite structure.

Doped-aluminum nitride (doped-AlN) films and methods of manufacturing doped-AlN films are disclosed. Some methods comprise forming alternating pinning layers and doped-AlN layers including a dopant selected from the group consisting of Sc, Y, Hf, Mg, Zr and Cr, wherein the pinning layers pin the doped-AlN layers to a c-axis orientation. Some methods include forming a conducting layer including a material selected from the group consisting of Mo, Pt, Ta, Ru, LaNiO.sub.3 and SrRuO.sub.3. Some methods include forming a thermal oxide layer having silicon oxide on a silicon substrate. Piezoelectric devices comprising the doped-AlN film are also disclosed.

The present disclosure provides a haptic feedback base plate, a haptic feedback apparatus and a haptic feedback method. The haptic feedback base plate comprises: a substrate and a deformation unit disposed on one side of the substrate. The deformation unit comprises a first electrode, a piezoelectric material layer and a second electrode that are arranged in a stacked manner, the first electrode is arranged close to the substrate, the first electrode and the second electrode are configured to form an alternating electric field, and the piezoelectric material layer vibrates under the effect of the alternating electric field and drives the substrate to resonate, wherein a difference between a frequency of the alternating electric field and an inherent frequency of the substrate is less than or equal to a preset threshold.

A surface acoustic wave resonator device comprises a substrate supporting: a gateable, electrically conducting layer; an interdigital transducer (IDT); a reflector grating that comprises a plurality of electrically separated fingers; a main ohmic contact; and a gate element. The IDT is configured to be connectable to a ground. The conducting layer is configured to be connectable to the ground via the main ohmic contact, while each of said fingers is electrically connected to a lateral side of the conducting layer. This defines a gateable channel, which extends from the fingers to the ground via the conducting layer and the main ohmic contact. The gate element is electrically insulated from the conducting layer. The gate element is configured to allow an electrical impedance of the gateable channel to be continuously tuned by applying a voltage bias to this gate element with respect to the ground, in operation of the device.

Provided is an electronic device in which penetrating wires can be formed easily. The electronic device includes a sealing plate 33 having a first surface 41 to which a pressure chamber-forming plate 29 is connected and a second surface 42 which is on a side opposite from the first surface 41 and on which a drive IC 34 is provided; bump electrodes 40 which are arranged in a nozzle row direction on the first surface 41 of the sealing plate 33 and which output signals to piezoelectric elements 32; individual connection terminals 54 which are arranged in the nozzle row direction on the second surface 42 of the sealing plate 33 and to which the signals are inputted, wherein wires each of which connects one of the bump electrodes 40 to one of the individual connection terminals 54 corresponding to the bump electrode 40 each include a penetrating wire 45 formed inside a through hole 45a penetrating the sealing plate 33 and made of a conductor, the penetrating wires 45 are formed at positions away from the bump electrodes 40 or the individual connection terminals 54 in a direction perpendicular to the nozzle row direction, and each two of the penetrating wires 45 adjacent in the nozzle row direction are arranged at different positions in the direction perpendicular to the nozzle row direction.

A piezoelectric vibration device that includes a piezoelectric vibrator having excitation electrodes formed thereon; a base having the piezoelectric vibrator on a first surface thereof; outer electrodes formed to continuously extend from the first surface of the base through a side face of the base to a second surface of the base opposite the first surface; and a lid having a recess opening that faces the first surface of the base, the lid being joined to the base to hermetically seal the piezoelectric vibrator in an internal space defined by the recess and the base. An edge portion of a corresponding one of the outer electrodes, formed by the first surface and the side face of the base, is at least partly covered by a covering member having insulating properties.

Provided are a polymer composite piezoelectric body in which the conversion efficiency between electricity and sound is increased and thus the sound pressure level is improved, an electroacoustic transduction film, and an electroacoustic transducer. The polymer composite piezoelectric body includes a viscoelastic matrix formed of a polymer material having a cyanoethyl group, piezoelectric body particles which are dispersed in the viscoelastic matrix and have an average particle diameter of more than or equal to 2.5 μm, and dielectric particles dispersed in the viscoelastic matrix, in which the dielectric particles are formed of a material different from that of the piezoelectric body particles and have an average particle diameter of less than or equal to 0.5 μm and a relative permittivity of more than or equal to 80.

An acoustic wave device fabrication method includes: forming on a piezoelectric substrate a comb-shaped electrode and a wiring layer coupled to the comb-shaped electrode; forming on the piezoelectric substrate a first dielectric film having a film thickness greater than those of the comb-shaped electrode and the wiring layer, covering the comb-shaped electrode and the wiring layer, and being made of silicon oxide doped with an element or undoped silicon oxide; forming on the first dielectric film a second dielectric film having an aperture above the wiring layer; removing the first dielectric film exposed by the aperture of the second dielectric film by wet etching using an etching liquid causing an etching rate of the second dielectric film to be less than that of the first dielectric film so that the first dielectric film is left so as to cover an end face of the wiring layer and the comb-shaped electrode.

A piezoelectric device includes a base member, a first conductive film arranged above the base member in contact with an upper surface of the base member, a piezoelectric film arranged above the first conductive film in contact with an upper surface of the first conductive film, a second conductive film arranged on the piezoelectric film, and an insulating portion provided inside a trench penetrating through the piezoelectric film and the first conductive film. The insulating portion has a higher electrical resistivity than the piezoelectric film.