To manufacture an oscillating structure, a wafer is processed by: forming torsional elastic elements; forming a mobile element connected to the torsional elastic elements; processing the first side of the wafer to form a mechanical reinforcement structure; and processing the second side of said wafer by steps of chemical etching, deposition of metal material, and/or deposition of piezoelectric material. Processing of the first side of the wafer is carried out prior to processing of the second side of the wafer so as not to damage possible sensitive structures formed on the first side of the wafer.

A microelectronic device including a substrate including, in a stack, a base portion, a dielectric portion and an upper layer with a semi-conductive material base, at least one electrical connection element made of an electrically conductive material located above the upper layer and electrically insulated from the upper layer at least by a dielectric layer, the dielectric layer being in contact with the surface of the upper layer, at least one dielectric element including at least one trench forming a closed edge at the periphery or upright of at least one portion of the dielectric electrical connection element, located at least partially in the upper layer and delimiting a closed zone of said upper layer, at least one dielectric element having a portion exposed to the surface of the upper layer, device wherein the dielectric layer totally covers the exposed portion of at least one dielectric element.

A method for producing a piezoelectric actuator including forming a vibration plate, forming a first electrode on the vibration plate, forming a piezoelectric layer on the first electrode, and forming a second electrode on the piezoelectric layer, wherein the forming the vibration plate has a single layer forming step including forming a metal layer containing zirconium by a gas phase method, and forming a metal oxide layer by firing the metal layer, the single layer forming step is repeated, thereby forming the vibration plate in which the metal oxide layers are stacked, and the metal oxide layer has a thickness less than 200 nm.

An ultrasound probe has an acoustic window (10) or lens (20) through which ultrasound is transmitted and received by a transducer array (30) located behind the lens or window inside a probe enclosure. The external, patient-contacting surface (24) of the acoustic lens or window is textured. The texturing of the surface of the lens or window better retains gel spread over the lens or window for an ultrasound procedure, reduces reverberation artifacts, and diminishes the appearance of scratches on the lens or window.

A transducer includes a supporting body and a suspended structure mechanically coupled to the supporting body. The suspended structure has a first and a second surface opposite to one another along an axis, and is configured to oscillate in an oscillation direction having at least one component parallel to the axis. A first piezoelectric transducer is disposed on the first surface of the suspended structure, and a second piezoelectric transducer is disposed on the second surface of the suspended structure.

A method of manufacturing a dielectric device includes epitaxially growing a metal film on a substrate, forming a dielectric film on the metal film such that the dielectric film has a preferentially oriented structure, forming a first electrode film having a non-oriented or amorphous structure on the dielectric film, removing the substrate and the metal film from the dielectric film or removing the substrate from the metal film, and forming a second electrode film having a non-oriented or amorphous structure on the dielectric film or the metal film.

A piezoelectric material includes a first material layer including a polycrystalline lead zinc niobate-lead zirconate titanate material arranged in a 001 crystal direction; and a second material layer including a mono-crystalline material having a 001 crystal face, wherein the lead zinc niobate-lead zirconate titanate and the mono-crystalline material are different. Also a piezoelectric device including the piezoelectric material.

A method for forming a MEMS device is provided. The method includes forming a stack of piezoelectric films and metal films on a base layer, wherein the piezoelectric films and the metal films are arranged in an alternating manner. The method also includes forming a first trench in the stack of the piezoelectric films and the metal films. The method further includes forming at least one void at the side wall of the first trench. In addition, the method includes forming a spacer structure in the at least one void. The method further includes forming a contact in the first trench after the formation of the spacer structure.

According to various embodiments, there is provided a resonator device that includes a first interdigital transducer and a second interdigital transducer that is electrically connected to the first interdigital transducer. Both the first interdigital transducer and the second interdigital transducer are configured to resonate at a common frequency. At least one of an electrode width and an electrode pitch of the first interdigital transducer is different from the respective electrode width and/or electrode pitch of the second interdigital transducer such that spurious peaks of the resonator device are lower in amplitude as compared to spurious peaks of each of the first interdigital transducer and the second interdigital transducer.

The present invention relates to a piezoelectric fiber having excellent flexibility, the piezoelectric fiber employs a conductive fiber member as an inner electrode, on which a piezoelectric polymer layer, an outer electrode and a coating layer are sequentially formed, thereby having excellent flexibility and sufficient elasticity to be sewed, woven, knotted or braided. Therefore, the piezoelectric fiber can be applied in power supplies for a variety of sizes and types of wearable electronic devices, portable devices, clothing, etc. In addition, since the piezoelectric fiber has excellent piezoelectricity and durability because of the above-described structure, it can effectively convert deformation or vibration caused by external physical force into electric energy, and thus can replace existing ceramic-based and polymer piezoelectric bodies, etc. Furthermore, an economical and simple method of manufacturing a piezoelectric fiber having excellent piezoelectricity is provided.