Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

Examples are disclosed herein relating to detecting a change in a substrate. A system can include a transducer that can be frequency matched to a substrate and to provide an electrical signal that can characterize a reflected sound wave by the substrate. The system can include an acoustic wave analysis system to detect a change in a physical characteristic of the substrate.

Examples are disclosed herein relating to detecting a change in a substrate. A system can include a transducer that can be frequency matched to a substrate and to provide an electrical signal that can characterize a reflected sound wave by the substrate. The system can include an acoustic wave analysis system to detect a change in a physical characteristic of the substrate.

A nitride contains zinc and a group 4 element. The group 4 element contained in the nitride is at least one kind of element selected from the group consisting of titanium and zirconium. A content of zinc in the nitride is expressed as [Zn] atomic %. A total content of the group 4 element in the nitride is expressed as [M] atomic %. In the nitride, [M]/([Zn]+[M]) is more than 20% and less than 50%.

A dynamic strain sensor includes a strain sensitive transistor and a light emitting diode coupled to the strain sensitive transistor. The dynamic strain sensor can include a piezoelectric layer incorporated into the structure of the strain sensitive transistor. The dynamic strain sensor can sense dynamic strain and can measure and monitor the dynamic strain wirelessly.

A polymeric piezoelectric material is provided that includes an aliphatic polyester (A) with a weight-average molecular weight of from 50,000 to 1,000,000 and having optical activity, and a stabilizing agent (B) with a weight-average molecular weight of from 200 to 60,000 having at least one kind of functional group selected from the group consisting of a carbodiimide group, an epoxy group and an isocyanate group, wherein the crystallinity of the material obtained by a DSC method is from 20% to 80%, a content of the stabilizing agent (B) is from 0.01 part by mass to 10 parts by mass with respect to 100 parts by mass of the aliphatic polyester (A), and internal haze with respect to visible light is 50% or less, as well as a process for producing the same.

A method for manufacturing an acoustic wave transducing unit including: forming a first electrode on a substrate; sequentially forming a supporting layer and a diaphragm layer on a side of the first electrode away from the substrate, the first electrode being lattice-matched with the supporting layer, the supporting layer being lattice-matched with the diaphragm layer, a Photon Energy of the supporting layer is smaller than that of the diaphragm layer; the supporting layer including a sacrificial portion and a supporting portion surrounding the sacrificial portion; forming a release hole penetrating through at least the diaphragm layer and being in contact with the sacrificial portion; performing a laser etching on the sacrificial portion to decompose the sacrificial portion into a metal simple substance and a gas; and removing the metal simple substance through the release hole so as to form a vibration chamber at a position of the sacrificial portion.

A method for manufacturing an acoustic wave transducing unit including: forming a first electrode on a substrate; sequentially forming a supporting layer and a diaphragm layer on a side of the first electrode away from the substrate, the first electrode being lattice-matched with the supporting layer, the supporting layer being lattice-matched with the diaphragm layer, a Photon Energy of the supporting layer is smaller than that of the diaphragm layer; the supporting layer including a sacrificial portion and a supporting portion surrounding the sacrificial portion; forming a release hole penetrating through at least the diaphragm layer and being in contact with the sacrificial portion; performing a laser etching on the sacrificial portion to decompose the sacrificial portion into a metal simple substance and a gas; and removing the metal simple substance through the release hole so as to form a vibration chamber at a position of the sacrificial portion.

An electronic device and associated methods are disclosed. In one example, the electronic device includes a MEMS die located within a substrate, and below a processor die. In selected examples, the MEMS die includes a resonator. Example methods of forming MEMS resonator devices are also shown.

An electronic device and associated methods are disclosed. In one example, the electronic device includes a MEMS die located within a substrate, and below a processor die. In selected examples, the MEMS die includes a resonator. Example methods of forming MEMS resonator devices are also shown.