A tactile feedback device includes a vibrating device and a touch sensor. The vibrating device comprises a flexible diaphragm and a film which deforms in response to the application of electrical energy thereto, the film being attached to the flexible diaphragm at two spaced locations with a major surface of the film facing a major surface of the flexible diaphragm. The vibrating device further includes a spacer located between the two spaced locations and ensuring that the major surface of the flexible diaphragm is spaced from the major surface of the film. The touch sensor is coupled to the diaphragm and generates an output signal in response to a touch operation. Means are provided to apply electrical energy to the film in response to the output signal.

A composite substrate 10 includes a supporting substrate 12 and a piezoelectric substrate 14 which are bonded to each other. In this embodiment, the supporting substrate 12 and the piezoelectric substrate 14 are bonded to each other by an adhesive layer 16. In the composite substrate 10, since the supporting substrate 12 is composed of a translucent alumina ceramic, alignment is easily performed during FCB compared with the case where the supporting substrate is composed of an opaque ceramic. Furthermore, preferably, the linear transmittance and the total light transmittance from the front of the supporting substrate 12 in the visible light range (360 to 750 nm) are 10% or more and 70% or more, respectively.

An inkjet printing head 1 includes an actuator substrate 2 having pressure chambers (cavities) 7, a movable film formation layer 10 including movable films 10A disposed above the pressure chambers 7 and defining top surface portions of the pressure chambers 7, and piezoelectric elements 9 formed above the movable films 10A. Each piezoelectric element 9 includes a lower electrode 11 formed above a movable film 10A, a piezoelectric film 12 formed above the lower electrode 11, and an upper electrode 13 formed above the piezoelectric film 12. The piezoelectric film 12 includes an active portion 12A with an upper surface in contact with a lower surface of an upper electrode 13 and an inactive portion 12B led out in a direction along a front surface of the movable film formation layer 10 from an entire periphery of a side portion of the active portion 12A and having a thickness thinner than that of the active portion 12A.

A piezoelectric element comprising a first electrode, a second electrode, and a lead zirconate titanate film located between the first electrode and the second electrode. The piezoelectric element is formed on a Si substrate whose principal surface is (001) plane. The Si substrate has uniform crystalline orientation in an in-plane direction and an out-of-plane direction. (110) plane of the Si substrate and (100) plane of the lead zirconate titanate film are parallel. In a rocking curve measurement of an X-ray diffraction method, symmetric surface reflection peak of the lead zirconate titanate film obtained by X-rays incident from [100] direction of the Si substrate can be fitted with three component peaks.

Provided in the embodiments are a transfer structure and a method thereof, and a transfer device and a manufacturing method thereof. The transfer structure includes: a first electrode, a piezoelectric layer, a second electrode and an adhesive layer stacked on a substrate in sequence, wherein the first electrode and the second electrode are insulated from each other. The transfer structure further includes: a position-limiting layer, wherein the position-limiting layer includes a cavity; the piezoelectric layer and at least part of the adhesive layer are located in the cavity of the position-limiting layer; and in the direction perpendicular to the substrate, the distance between the surface, away from the substrate, of the position-limiting layer and the substrate is greater than the distance between the surface, away from the substrate, of the adhesive layer and the substrate.

A piezoelectric device includes a deformation portion, a non-deformation portion which hinders deformation of the elastic layer, and a piezoelectric element. The deformation portion includes a first area in which the piezoelectric element is disposed, a third area adjacent to the non-deformation portion, and a second area disposed between the first area and the third area. In the first area, the elastic layer, an insulation layer, the lower electrode layer, the piezoelectric layer, and the upper electrode layer are sequentially stacked. In the second area, the elastic layer, the insulation layer, the piezoelectric layer, and the upper electrode layer are sequentially stacked. In the third area, the elastic layer and the upper electrode layer are sequentially stacked. The elastic layer is silicon oxide, and impurities are added to the upper electrode layer in the silicon oxide in the third area.

An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.

An empty chamber component includes a pressure chamber formation substrate where a pressure chamber as an empty chamber is defined and a communication substrate bonded to the pressure chamber formation substrate. A piezoelectric element is provided on one side of the pressure chamber formation substrate. A flexible surface is located between the piezoelectric element and the pressure chamber. Empty portions are defined by the communication substrate closing recessed portions in the pressure chamber formation substrate. The empty portions are formed at positions where ends of the active section of the piezoelectric element pass through the empty portions in plan view.

Various aspects of the present disclosure are directed toward apparatuses, systems, and methods that include a ferroelectric article. The ferroelectric article may include a composite film having a first side and a second side, a first electrode electrically coupled to the first side of the composite film, and a second electrode electrically coupled to the second side of the composite film. The composite film may include a ferroelectric material and a polymeric reinforcement membrane.

A MEMS device is provided that includes a semiconductor substrate including a main surface extending perpendicular to a first direction and a side surface extending on a plane parallel to the first direction and to a second direction that is perpendicular to the first direction. At least one cantilevered member protrudes from the side surface of the semiconductor substrate along a third direction that is perpendicular to the first and second directions. The at least one cantilevered member includes a body portion that includes a piezoelectric material. The body portion has a length along the third direction, a height along the first direction and a width along the second direction, and the height is greater than the width. The at least one cantilevered member is configured to vibrate by lateral bending along a direction perpendicular to the first direction.