A base end of a flexible plate-like structure body (111) having a first attribute is fixed to a pedestal (310) and a leading end thereof is connected to a connector between different attributes (112). Base end of a flexible plate-like structure body (113, 114) having a second attribute is connected to the connector between different attributes (112) and leading end thereof is given as free ends. Weight body (211, 212, 213) is connected to the lower surface of the connector between different attributes (112) and the leading-end lower surface of the plate-like structure body (113, 114) having the second attribute. When vibration energy is applied to the pedestal (310), the weight body (211, 212, 213) undergoes vibration, resulting in deformation of each of the plate-like structure bodies (111, 113, 114). The deformation energy is taken out by a charge generating element (400) such as a piezoelectric element to generate electric power. The plate-like structure body (111) having the first attribute extends in a positive direction of an Y axis, and the plate-like structure body (113, 114) having the second attribute extend in a negative direction of the Y axis. Therefore, a plurality of resonance systems different in resonance frequency exists concurrently along the same axis, thereby widening a frequency band capable of generating electric power.

The present invention relates to a heterojunction semiconductor substrate having excellent dielectric properties, a method of manufacturing the same, and an electronic device using the same. The present invention provides a heterojunction semiconductor substrate with improved interlayer adhesion, low leakage current, and excellent dielectric properties that maintain strength in a ferroelectric fatigue experiment by interposing a metal layer and a conductive metal oxide layer on a semiconductor substrate to form an epitaxial oxide thin film layer composed of perovskite piezoelectric oxide. The heterojunction semiconductor substrate can be applied to sensors, actuators, transducers, or MEMS devices that use the high functionality of the high-quality epitaxial oxide thin film layer, including applications in electronic and optical devices.

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.

Techniques are disclosed for forming high frequency film bulk acoustic resonator (FBAR) devices that include a bottom electrode formed of a two-dimensional electron gas (2DEG). The disclosed FBAR devices may be implemented with various group III-nitride (III-N) materials, and in some cases, the 2DEG may be formed at a heterojunction of two epitaxial layers each formed of III-N materials, such as a gallium nitride (GaN) layer and an aluminum nitride (AlN) layer. The 2DEG bottom electrode may be able to achieve similar or increased carrier transport as compared to an FBAR device having a bottom electrode formed of metal. Additionally, in some embodiments where AlN is used as the piezoelectric material for the FBAR device, the AlN may be epitaxially grown which may provide increased performance as compared to piezoelectric material that is deposited by traditional sputtering techniques.

A piezoelectric element includes a substrate; a first electrode formed above the substrate; a piezoelectric layer which contains a composite oxide having a perovskite crystal structure and which is formed above the first electrode; and a second electrode formed above the piezoelectric layer, and the amount of carbon contained in the substrate is 0.26 to less than 14.00 percent by atom.

A supporting substrate for a composite substrate comprises a ceramic and has a polished surface for use in bonding. An orientation degree of the ceramic forming the supporting substrate at the polished surface is 50% or higher, and an aspect ratio of each crystal grain included in the supporting substrate is 5.0 or less.

An energy harvester includes a frame having a base, a first side member affixed to the base, and a second side member affixed to the base and spaced apart from the first side member. A beam is coupled between the first side member of the frame and the second side member of the frame. The beam has a substrate layer with a first end affixed to the first side member of the frame, a second end affixed to the second side member of the frame, a first face, and a second face opposite to the first face. The substrate is elastically deformable in response to the vibratory force. The beam further includes a first piezoelectric layer joined to the first face of the substrate layer and having a terminal for electrical connection to a load, the first piezoelectric layer comprising at least one piezoelectric patch.

A sensor assembly for a gas turbine engine according to an example of the present disclosure includes, among other things, a substrate layer formed on a localized surface of a rotatable gas turbine engine component, and at least one pair of transducers deposited on the substrate layer.

A piezoelectric film includes a substrate having flexibility, and at least two piezoelectric elements provided to the substrate so as to be arranged at intervals of a first dimension along a first direction, the piezoelectric elements are each configured by stacking a first electrode film, a piezoelectric film made of an inorganic material, and a second electrode film along a thickness direction of the substrate, and an area between the piezoelectric elements adjacent to each other along the first direction forms a vibrational region which can be displaced in the thickness direction.

A liquid discharge head is provided. The liquid discharge head includes: a semiconductor substrate including a first pressure chamber; an insulating film disposed above the semiconductor substrate; a first piezoelectric element disposed on an opposite side to the first pressure chamber of the insulating film and having a piezoelectric layer and a first and second electrode; and a doped layer formed in the semiconductor substrate. The doped layer partitions at least part of the first pressure chamber and has a lower electrical resistivity than the insulating film and the semiconductor substrate. A through hole having a conductor disposed on its inside is formed in the insulating film, and the first electrode and the doped layer are electrically continuous via the conductor.