[Object]

An object of the present invention is to provide a method for manufacturing an oxide single crystal substrate having less dispersion in characteristics within the substrate surface.

[Means to solve the Problems]

In the manufacture method of the present invention, a powder containing a Li compound is dispersed in a medium to form a slurry, and heat is applied while the slurry is in contact with the surface of the oxide single crystal substrate, so as to diffuse Li into the substrate from the surface thereof to effect a modification of the substrate; or after the slurry is brought into contact with the surface of the oxide single crystal substrate, the oxide single crystal substrate is buried in a powder containing the Li compound, and heat is applied to effect the diffusion of Li in the substrate from the surface thereof whereby a modification of the substrate occurs.

Provided are a polymer composite piezoelectric body in which the conversion efficiency between electricity and sound is increased and thus the sound pressure level is improved, an electroacoustic transduction film, and an electroacoustic transducer. The polymer composite piezoelectric body includes a viscoelastic matrix formed of a polymer material having a cyanoethyl group, piezoelectric body particles which are dispersed in the viscoelastic matrix and have an average particle diameter of more than or equal to 2.5 μm, and dielectric particles dispersed in the viscoelastic matrix, in which the dielectric particles are formed of a material different from that of the piezoelectric body particles and have an average particle diameter of less than or equal to 0.5 μm and a relative permittivity of more than or equal to 80.

A piezoelectric device includes a support member, and a vibrating portion provided on a support surface of the support member. The vibrating portion includes, in addition to a first electrode, a piezoelectric film and a second electrode arranged in a stacking direction, an insulating film configured to increase an electric resistance value between the first and second electrodes. The first electrode is provided on the support surface of the support member, and includes an opening penetrating the first electrode in the stacking direction. The piezoelectric film is provided on the first electrode to extend across the opening. The second electrode is provided on the piezoelectric film. The insulating film is provided at a position between the first electrode and the second electrode, and at least a part of the insulating film overlaps with the opening in the stacking direction.

A piezoelectric device includes a support member, and a vibrating portion provided on a support surface of the support member. The vibrating portion includes, in addition to a first electrode, a piezoelectric film and a second electrode arranged in a stacking direction, an insulating film configured to increase an electric resistance value between the first and second electrodes. The first electrode is provided on the support surface of the support member, and includes an opening penetrating the first electrode in the stacking direction. The piezoelectric film is provided on the first electrode to extend across the opening. The second electrode is provided on the piezoelectric film. The insulating film is provided at a position between the first electrode and the second electrode, and at least a part of the insulating film overlaps with the opening in the stacking direction.

A piezoelectric device includes a base member, a first conductive film arranged above the base member in contact with an upper surface of the base member, a piezoelectric film arranged above the first conductive film in contact with an upper surface of the first conductive film, a second conductive film arranged on the piezoelectric film, and an insulating portion provided inside a trench penetrating through the piezoelectric film and the first conductive film. The insulating portion has a higher electrical resistivity than the piezoelectric film.

A piezoelectric device includes a base member, a first conductive film arranged above the base member in contact with an upper surface of the base member, a piezoelectric film arranged above the first conductive film in contact with an upper surface of the first conductive film, a second conductive film arranged on the piezoelectric film, and an insulating portion provided inside a trench penetrating through the piezoelectric film and the first conductive film. The insulating portion has a higher electrical resistivity than the piezoelectric film.

A piezoelectric element includes, on a base, an underlying layer for controlling crystallinity of a piezoelectric layer, and the piezoelectric layer. The piezoelectric layer includes a crystal with an ABO.sub.3-type structure having at least Pb at A sites. In the underlying layer, an interface-with-the-base side is configured including at least Pb and another substance with a different composition rate from that of the piezoelectric layer at the A sites, and a substance with a different composition ratio from that of the piezoelectric layer at B sites. In a layer above the interface-with-the-base side in the underlying layer, the composition rate of the other substance included at the A sites of the underlying layer progressively changes and also the composition ratio of the substance included at the B sites progressively changes, from the interface-with-the-base side toward the interface-with-the-piezoelectric-layer side to approach the composition of the piezoelectric layer.

Provided is a slot die coating device, and more specifically, a slot die coating device in which negative pressure generation is applied into a slot die and a method of using the same. The slot die coating device includes a first main body including a first surface, a second main body including a second surface corresponding to the first surface, and located to be spaced apart from the first surface by a regular interval, a main body unit including a head lip that is a space between the first surface and the second surface, and a negative pressure generation unit installed on at least one of the first main body and the second main body.

A structure of an integrated crystal oscillator package has a first quartz crystal resonator, a second quartz crystal resonator, and application-specific integrated circuit chip (ASIC) combined in a package. The ASIC has a switch control for receiving audio formats of 44.1 kHz and 48 kHz with different hi-fidelity (hi-fi). The first quartz crystal resonator has a first clock rate corresponding to the 44.1 kHz frequency and the second quartz crystal resonator has a second clock rate corresponding to the 48 kHz frequency to be switched by the present invention in operation.

The ultrasound probe includes a piezoelectric element including a piezoelectric composition and an electrode that applies a voltage to the piezoelectric composition. The piezoelectric composition has piezoelectric characteristics expressed by any coordinates included in a region formed by a polyhedron having a plurality of predetermined points as vertexes in Cartesian coordinates (k.sub.eff, ε.sub.33.sup.S, E.sub.c) including variables k.sub.eff, ε.sub.33.sup.S and E.sub.c.