Patent classifications
H10N30/85
MULTIFERROIC MEMORY WITH PIEZOELECTRIC LAYERS AND RELATED METHODS
An electronic device may include a first electrode, a first piezoelectric layer electrically coupled to the first electrode, a first magnetostrictive layer above the first piezoelectric layer, a first tunnel barrier layer above the first magnetostrictive layer, and a ferromagnetic layer above the first ferroelectric layer. The electronic device may further include a second electrode electrically coupled to the ferromagnetic layer a second tunnel barrier layer above the ferromagnetic layer, a second magnetostrictive layer above the second tunnel barrier layer, a second piezoelectric layer above the second magnetostrictive layer, and a third electrode electrically coupled to the second piezoelectric layer. The first piezoelectric layer may be strained responsive to voltage applied across the first and second electrodes, and the second piezoelectric layer may be strained responsive to voltage applied across the second and third electrodes.
LAMINATED PIEZOELECTRIC ELEMENT AND ELECTROACOUSTIC TRANSDUCER
Provided is a laminated piezoelectric element is formed by folding back and laminating a piezoelectric film having an electrode layer and a protective layer on both sides of a piezoelectric layer in which piezoelectric particles are dispersed in a matrix. In the laminated two layers of the piezoelectric film, in a case where a thickness of a central portion thereof is a center thickness and a position up to twice the center thickness in a direction from the folded side end part toward the center is the folded-back portion, there is a position at which the thickness is greater than the center thickness in the folded-back portion, and there is an air gap in the folded-back portion or the air gap is filled with a cementing agent. The laminated piezoelectric element is able to prevent peeling of the electrode layer and the like in the folded-back portion in the laminated piezoelectric element in which the piezoelectric film is folded back and laminated. An electroacoustic transducer uses the laminated piezoelectric element.
Piezoelectric device comprising an amino acid crystal
The present invention discloses a piezoelectric device comprising an amino acid crystal.
ROLLABLE ELECTROACOUSTIC TRANSDUCER AND ROLLABLE IMAGE DISPLAY DEVICE
An object of the present invention is to provide an electroacoustic transducer and an image display device, each of which can be rolled up and does not need a mechanical mechanism and a driving source. The object is accomplished by providing a vibration plate or display element which can be rolled up, and a convex leaf spring having an arc-shaped cross section in the lateral direction and having a concave side disposed facing one surface of the vibration plate or a non-image-displaying surface of the display element.
CERAMIC CUTTER MATERIAL WITH A PIEZOELECTRIC EFFECT AND PREPARATION METHOD THEREOF, AND CUTTING TOOL
A ceramic tool material, in particular with piezoelectric effect and a preparation method thereof, and a cutting tool. The ceramic tool material includes the following raw materials by weight: 30-70 parts of matrix material, 30-70 parts of piezoelectric material, 5-10 parts of binder, and 10-20 parts of reinforcing phase and can be made into cutting tools. The cutting tool has a piezoelectric effect and excellent mechanical properties and can convert the cutting force signal into the charge signal during machining. By collecting charge signals, a cutting force can be measured and ceramic cutting tool condition can be monitored. Cutting force measurement function and high mechanical properties are integrated. A ceramic tool material with piezoelectric effect can measure the cutting force on the premise by meeting the cutting performance requirements.
Ultrasonic transducer
There are provided an ultrasonic transducer and methods for designing and manufacturing the same. The ultrasonic transducer includes a piezoelectric composite layer configured to be in acoustic communication with a sample and having at least partially decoupled acoustic impedance and electrical impedance properties. The piezoelectric composite layer includes an array of spaced-apart piezoelectric regions, each being made from a piezoelectric material, a filler material positioned between adjacent spaced-apart piezoelectric regions, the filler material comprising a polymer matrix and a non-piezoelectric material in contact with the polymer matrix. In some embodiments, the ultrasonic transducer includes an electrically insulating non-piezoelectric composite layer extending over the piezoelectric composite layer for electrically insulating the piezoelectric composite layer from the sample, the electrically insulating non-piezoelectric composite layer being acoustically matched to the piezoelectric composite layer and the sample.
Semiconductor device and method of forming a semiconductor device
A semiconductor device may include: a substrate wafer, a bonding layer at least partially covering a front surface of the substrate wafer, a plurality of silicon pillars bonded to the front surface of the substrate wafer by the bonding layer, a single-crystal piezoelectric film having a first surface and an opposing second surface, a top electrode arranged adjacent to the first surface of the single-crystal piezoelectric film, and a bottom electrode arranged adjacent to the second surface of the single-crystal piezoelectric film. The single-crystal piezoelectric film may be supported by the plurality of silicon pillars such that the second surface of the piezoelectric film and the front surface of the substrate wafer enclose a cavity therebetween.
Semiconductor device and method of forming a semiconductor device
A semiconductor device may include: a substrate wafer, a bonding layer at least partially covering a front surface of the substrate wafer, a plurality of silicon pillars bonded to the front surface of the substrate wafer by the bonding layer, a single-crystal piezoelectric film having a first surface and an opposing second surface, a top electrode arranged adjacent to the first surface of the single-crystal piezoelectric film, and a bottom electrode arranged adjacent to the second surface of the single-crystal piezoelectric film. The single-crystal piezoelectric film may be supported by the plurality of silicon pillars such that the second surface of the piezoelectric film and the front surface of the substrate wafer enclose a cavity therebetween.
PIEZOELECTRIC ELEMENT AND METHOD FOR PRODUCING A PIEZOELECTRIC ELEMENT
A piezoelectric element and a method of manufacturing the piezoelectric element are provided. The piezoelectric element is provided with a substrate having an intermediate layer disposed between a first substrate layer and a second substrate layer, a first electrode layer of an electrically conductive non-ferroelectric material disposed on the second substrate layer, a ferroelectric, piezoelectric and/or flexoelectric layer disposed on the first electrode layer, and a second electrode layer of an electrically conductive non-ferroelectric material disposed on the ferroelectric, piezoelectric and/or flexoelectric layer. The intermediate layer and/or the first substrate layer is removed below a layer stack formed by the first electrode layer, the ferroelectric, piezoelectric and/or flexoelectric layer, and the second electrode layer so that the layer stack can be moved in a translatory manner along its normal directed along the layer sequence.
OPTICAL ELEMENT DRIVING MECHANISM
An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, and a driving assembly. The movable assembly is configured to be connected to an optical element and is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move along a first axis relative to the fixed assembly.