A synchronized piezoelectric and luminescence (SPL) material includes a core layer including light-emitting particles and a shell layer which is attached onto a surface of the core layer and includes ligands having a piezoelectric property. Therefore, a piezoelectric property and a luminescent property can be simultaneously implemented using a single SPL material in which piezoelectric ligands and light-emitting particles are chemically coupled.

An acoustic resonator device with low thermal impedance has a substrate and a single-crystal piezoelectric plate having a back surface attached to a top surface of the substrate via a bonding oxide (BOX) layer. An interdigital transducer (IDT) formed on the front surface of the plate has interleaved fingers disposed on the diaphragm, the overlapping distance of the interleaved fingers defining an aperture of the resonator device. Contact pads are formed at selected locations over the surface of the substrate to provide electrical connections between the IDT and contact bumps to be attached to the contact pads. The piezoelectric plate is removed from at least a portion of the surface area of the device beneath each of the contact pads to provide lower thermal resistance between the contact bumps and the substrate.

A vibration element includes: a base; a first arm continuous with the base; a second arm that is continuous with the base and is adjacent to the first arm; a first electrode disposed on the first arm, the second arm, and the base; a first piezoelectric layer that has a first polarity and that is disposed on the first electrode on the first arm; a second piezoelectric layer that has a second polarity different from the first polarity and that is disposed on the first electrode on the second arm; an insulating layer disposed on the first electrode on the base; and a second electrode disposed on the first piezoelectric layer, the second piezoelectric layer, and the insulating layer.

A power generation device manufacturing method and a power generation device are proposed. In one embodiment, the method includes (a) forming a halide perovskite active layer on a flexible substrate bent by a stress applied thereto and (b) releasing the stress applied to the substrate on which the halide perovskite active layer is formed, thereby unfolding the bent substrate. By applying a strain to the active layer of the power generation device and controlling the same, using the method described above, it is possible to improve the performance of the power generation device without changing the composition of the active layer or the configuration of the device.

Some embodiments relate to an energy transduction device or apparatus. An example device or apparatus includes: a piezoelectric transducer; electrical conductors electrically coupled to the piezoelectric transducer; and an axially aligned magnet assembly arranged to apply static compressive force to the piezoelectric transducer, the magnet assembly being coupled to a base at one end and having a free opposite end. The magnet assembly is coaxial with the piezoelectric transducer and at least part of the magnet assembly is concentric with the piezoelectric transducer. The magnet assembly defines a gap between axially adjacent parts of the magnet assembly, wherein the gap is dimensioned to be sufficiently small that the magnet assembly applies a static compressive force to the piezoelectric transducer while being sufficiently large to allow for axial movement of the piezoelectric transducer without closing the gap.

A semiconductor device comprising a passive magnetoelectric transducer structure adapted for generating a charge via mechanical stress caused by a magnetic field. The first transducer structure has a first terminal electrically connectable to the control terminal of an electrical switch, and having a second terminal electrically connectable to the first terminal of the electrical switch for providing a control signal for opening/closing the switch. The switch may be a FET. A passive magnetic switch using a magnetoelectric transducer structure. Use of a passive magnetoelectric transducer structure for opening or closing a switch without the need for an external power supply.

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

Examples include a device including a nanovoided polymer element having a first surface and a second surface, a first plurality of electrodes disposed on the first surface, a second plurality of electrodes disposed on the second surface, and a control circuit configured to apply an electrical potential between one or more of the first plurality of electrodes and one or more of the second plurality of electrodes to induce a physical deformation of the nanovoided polymer element.

Various embodiments of the present disclosure are directed towards an integrated chip including a piezoelectric membrane overlying a substrate. A plurality of conductive layers is disposed within the piezoelectric membrane. The plurality of conductive layers comprises a first conductive layer over a second conductive layer. The first conductive layer comprises a first electrode and the second conductive layer comprises a second electrode. A first conductive via is disposed in the piezoelectric membrane and contacts the first electrode. A second conductive via is disposed in the piezoelectric membrane and contacts the second electrode. A sidewall of the second conductive via comprises a vertical sidewall segment overlying a slanted sidewall segment.

An optoelectronic or electronic device structure, including an active region on or above a polar substrate, wherein the active region comprises a polar p region. The device structure further includes a hole supply region on or above the active region. Holes in the hole supply region are driven by a field into the active region, the field arising at least in part due to a piezoelectric and/or spontaneous polarization field generated by a composition and grading of the active region.