Methods of forming a settable resistance device, settable resistance devices, and neuromorphic computing devices include isotropically etching a stack of layers, the stack of layers having an insulator layer in contact with a conductor layer, to selectively form divots in exposed sidewalls of the conductor layer. The stack of layers is isotropically etched to selectively form divots in exposed sidewalls of the insulator layer, thereby forming a tip at an interface between the insulator layer and the conductor layer. A dielectric layer is formed over the stack of layers to cover the tip. An electrode is formed over the dielectric layer, such that the dielectric layer is between the electrode and the tip.

An object of the present invention is to provide a piezoelectric element formed of a piezoelectric film including an electrode layer provided on each of both surfaces of a piezoelectric layer and a protective layer provided on the surface of the electrode layer, in which the electrode layer and a conductive member such as a lead wire can be connected to each other with high productivity and the resistance of the connection is also low. The object thereof is achieved by opening through-holes in the protective layer of the piezoelectric film and the conductive member, allowing both through-holes to at least partially overlap each other, filling the through-hole of the protective layer with a conductive filling member, and allowing the filling member to reach the through-hole of the conductive member.

An object of the present invention is to provide a piezoelectric element formed of a piezoelectric film including an electrode layer provided on each of both surfaces of a piezoelectric layer and a protective layer provided on the surface of the electrode layer, in which the electrode layer and a conductive member such as a lead wire can be connected to each other with high productivity and the resistance of the connection is also low. The object thereof is achieved by opening through-holes in the protective layer of the piezoelectric film and the conductive member, allowing both through-holes to at least partially overlap each other, filling the through-hole of the protective layer with a conductive filling member, and allowing the filling member to reach the through-hole of the conductive member.

A method for manufacturing a vibration element includes, a base film forming step of forming a first base film at a first substrate surface of a quartz crystal substrate in first and second vibrating arm forming regions, a protective film forming step of forming a first protective film in a bank portion forming region of the first base film, and a dry-etching step of dry-etching the quartz crystal substrate through the first base film and the first protective film.

A method for manufacturing a vibration element includes, a base film forming step of forming a first base film at a first substrate surface of a quartz crystal substrate in first and second vibrating arm forming regions, a protective film forming step of forming a first protective film in a bank portion forming region of the first base film, and a dry-etching step of dry-etching the quartz crystal substrate through the first base film and the first protective film.

A method of manufacture and resulting structure for a single crystal electronic device with an enhanced strain interface region. The method of manufacture can include forming a nucleation layer overlying a substrate and forming a first and second single crystal layer overlying the nucleation layer. These first and second layers can be doped by introducing one or more impurity species to form the strained single crystal layers. The first and second strained layers can be aligned along the same crystallographic direction to form a strained single crystal bi-layer having an enhanced strain interface region. Using this enhanced single crystal bi-layer to form active or passive devices results in improved physical characteristics, such as enhanced photon velocity or improved density charges.

A method of manufacture and resulting structure for a single crystal electronic device with an enhanced strain interface region. The method of manufacture can include forming a nucleation layer overlying a substrate and forming a first and second single crystal layer overlying the nucleation layer. These first and second layers can be doped by introducing one or more impurity species to form the strained single crystal layers. The first and second strained layers can be aligned along the same crystallographic direction to form a strained single crystal bi-layer having an enhanced strain interface region. Using this enhanced single crystal bi-layer to form active or passive devices results in improved physical characteristics, such as enhanced photon velocity or improved density charges.

A piezoelectric device comprises at least one piezoelectric layer P interposed between two conductive layers E, each layer E forming an electrode, characterized in that the layer P comprises at least one piezoelectric composition based on at least one elastomer matrix comprising predominantly at least one diene elastomer, a piezoelectric inorganic filler, a carbon black and a crosslinking system, and in that the content of piezoelectric inorganic filler is greater than or equal to 5% by volume, relative to the total volume of the piezoelectric composition, and the content of carbon black is greater than or equal to 6% by volume, relative to the total volume of the piezoelectric composition. A tire comprising at least one piezoelectric device defined above is also set forth.

A crystal oscillator includes a piezoelectric substrate, a first electrode, a second electrode, and a support frame. The first electrode includes a first electrode portion disposed on a first surface of the piezoelectric substrate. The second electrode is disposed on a second surface of the piezoelectric substrate opposite to the first surface of the piezoelectric substrate. The support frame is made of a photoresist material, and is disposed on the second surface. The support frame surrounds the second electrode portion. At least a portion of the second extending electrode portion is located outside the support frame. A method for making the crystal oscillator is also provided herein.

An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.