An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

A piezoelectric element that includes a substrate, a lower electrode layer on the substrate, an intermediate layer on the lower electrode layer, and an upper electrode layer on the intermediate layer. The intermediate layer includes a first piezoelectric layer including an aluminum nitride as a main component thereof and located between the lower electrode layer and the upper electrode layer, a first buffer layer including an aluminum nitride as a main component and located between the first piezoelectric layer and the upper electrode layer, a first intermediate electrode layer located between the first buffer layer and the upper electrode layer, and a second piezoelectric layer located between the first intermediate electrode layer and the upper electrode layer.

The module comprises a pendular unit with an elastically deformable piezoelectric beam having a clamped end and an opposite, free end, coupled to an inertial mass. The beam produces an oscillating electrical signal collected by electrodes, which is rectified and regulated to output a voltage for charging a battery. The number and configuration of the electrodes (T1, T2, B1, B2, N) carried by the piezoelectric beam define a plurality of pairs of electrodes between which a corresponding plurality of said oscillating signals can be simultaneously collected. A switching matrix, as a function of an input command, selectively switches the plurality of pairs of electrodes between each other according to a plurality of different series (S), parallel (P) and/or series-parallel (SP) configurations, the selected configuration being that which maximizes the power sent to the battery as a function of the voltage level (VBAT) present at the terminals of the latter.

A piezoelectric member including metal electrodes with improved adhesiveness to piezoelectric elements is to be provided. A piezoelectric member 102 includes a piezoelectric element 21, and a pair of electrodes 41, 42 respectively formed on a pair of opposing surfaces 21b, 21c of the piezoelectric element 21. The electrodes 41, 42 includes: a base film 41a that is formed on the opposing surfaces 21b, 21c of the piezoelectric element 21 and contains a thiol group; a metal adhesive film 41b formed on the base film 41a; and an electrode film 41c that is formed on the metal adhesive film 41b and is for applying voltage to the piezoelectric element 21. The metal adhesive film 41b is formed with a different material from the electrode film 41c, and has a thickness of 1 to 10 nm.

A vibration generating device includes: a vibrator; and a piezoelectric actuator. The vibrator has a first main surface and a second main surface on a side opposite to the first main surface. The piezoelectric actuator is joined to the second main surface. A plurality of recessions and projections is formed at equal intervals on the first main surface. The vibration generating device is configured to be capable of presenting a haptic sensation while preventing a contact sound from being generated.

An object of the present invention is to provide a piezoelectric element capable of improving the sound pressure particularly in a high frequency band by decreasing the impedance in a case of being used as an electroacoustic transducer or the like, and a piezoelectric speaker formed of a piezoelectric film. The object can be achieved by using a piezoelectric film in which a piezoelectric layer containing piezoelectric particles in a polymer matrix is sandwiched between electrode layers, a planar shape is a polygon, the piezoelectric film has a protruding portion protruding from a side of a polygon other that a shortest side, and the protruding portion is provided with connecting portions for connecting an external power supply and an electrode layer or identical connecting portions are provided in the vicinity of end portions on a side other than the shortest side.

A MEMS structure may include a substrate, a first metal layer arranged over the substrate, an aluminum nitride layer at least partially arranged over the first metal layer and a second metal layer including one or more patterns arranged over the aluminum nitride layer. The first metal layer may include an electrode area configured for external electrical connection and one or more isolated areas configured to be electrically isolated from the electrode area and further configured to be electrically isolated from external electrical connection. Each pattern of the second metal layer may be arranged to at least partially overlap with one of the isolated area(s) of the first metal layer.

A piezoelectric laminate and a piezoelectric element have, on a substrate in the following order, a lower electrode layer and a piezoelectric film containing a perovskite-type oxide. The lower electrode layer includes a second layer arranged in a state of being in contact with the piezoelectric film and includes a first layer arranged on a side of the second layer from the substrate, where the first layer contains one or more of W, Mo, Nb, and Ta, as a main component, and the second layer contains Ir as a main component, where the thickness of the second layer is 50 nm or less.

A piezoelectric laminate and a piezoelectric element have, on a substrate in the following order, a lower electrode layer and a piezoelectric film containing a perovskite-type oxide. The lower electrode layer includes a second layer arranged in a state of being in contact with the piezoelectric film and includes a first layer arranged on a side of the second layer from the substrate, where the first layer contains one or more of W, Mo, Nb, and Ta, as a main component, and the second layer contains Ir as a main component, where the thickness of the second layer is 50 nm or less.

A piezoelectric laminate and a piezoelectric element have, on a substrate in the following order, a lower electrode layer, and a piezoelectric film containing a perovskite-type oxide. The lower electrode layer includes a first layer arranged in a state of being in contact with the substrate and includes a second layer arranged in a state of being in contact with the piezoelectric film, the first layer contains Ti or TiW as a main component, the second layer is a uniaxial alignment film which contains Ir as a main component and in which the Ir is aligned in a (111) plane, and a half width at half maximum of an X-ray diffraction peak from the (111) plane is 0.3° or more.