An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.

An apparatus may include a vibration member and a vibration device configured to vibrate the vibration member. The vibration device may be configured to comprise a first vibration portion and a second vibration portion which is different from the first vibration portion.

A piezoelectric device includes a first substrate including a first surface on which piezoelectric elements and a common terminal coupled to the piezoelectric elements are placed, a second substrate including a second surface on which a common connecting terminal coupled to a control circuit is placed, a third substrate placed between the first substrate and the second substrate and including a third surface joined to the first surface and a fourth surface facing the second surface, and bonding portions bonding the second substrate and the third substrate by an adhesive, wherein the third substrate includes a first through hole penetrating from the third surface to the fourth surface and a first through electrode provided in the first through hole and coupled to the common terminal, the common connecting terminal is coupled to the first through electrode and electrically coupled to the common terminal via the first through electrode, and the second substrate includes a wall suppressing an outflow of the adhesive on the second surface facing the third substrate.

An electronic device includes a first substrate including a first face on which a common terminal to be coupled to the element is disposed, and a second substrate which has a second face and a third face, and which is arranged so that the second face faces to the first face, wherein the second substrate has a first through hole at a position corresponding to the common terminal, the first through hole penetrating from the second face to the third face, a first through electrode electrically coupled to the common terminal is disposed in the first through hole, and a void is disposed in a part of the first through electrode.

An actuator has a plurality of pairs of a flexible electrode having flexibility, and a base electrode having an opposed face that is opposed to the flexible electrode and is covered with an insulating layer. The flexible electrode is configured to deform to get closer to the opposed face when a voltage is applied to the flexible electrode and the base electrode. Each of the pairs is located on the same axis, and adjacent ones of the pairs are connected to each other. The axis intersects with the opposed face of the base electrode of each of the pairs. The base electrode of each of the pairs is divided into a plurality of electrode portions insulated from each other, and the voltage is individually applied to the electrode portions.

A system for a wireless communication infrastructure using single crystal devices. The wireless system can include a controller coupled to a power source, a signal processing module, and a plurality of transceiver modules. Each of the transceiver modules includes a transmit module configured on a transmit path and a receive module configured on a receive path. The transmit modules each include at least a transmit filter having one or more filter devices, while the receive modules each include at least a receive filter. Each of these filter devices includes a single crystal acoustic resonator device formed with a thin film transfer process with at least a first electrode material, a single crystal material, and a second electrode material. Wireless infrastructures using the present single crystal technology perform better in high power density applications, enable higher out of band rejection (OOBR), and achieve higher linearity as well.

A piezoelectric device includes a base and a laminated portion. The laminated portion includes, at least above a recess, a piezoelectric layer, a pair of electrode layers to apply a voltage to the piezoelectric layer, and a membrane covering the recess. The membrane includes a piezoelectric membrane, in the piezoelectric layer, that swells on at least one of a side of the recess and a side opposite to the side of the recess.

A piezoelectric device includes a base and a laminated portion. The laminated portion includes, at least above a recess, a piezoelectric layer, a pair of electrode layers to apply a voltage to the piezoelectric layer, and a membrane covering the recess. The membrane includes a piezoelectric membrane, in the piezoelectric layer, that swells on at least one of a side of the recess and a side opposite to the side of the recess.

In an acoustic wave device, a piezoelectric body is directly or indirectly provided on a high acoustic velocity material layer, an interdigital transducer electrode is directly or indirectly provided on the piezoelectric body, the interdigital transducer electrode includes a first busbar, a second busbar spaced away from the first busbar, a plurality of first electrode fingers, and a plurality of second electrode fingers, and a weighting is applied to the interdigital transducer electrode by providing a floating electrode finger not electrically connected to the first busbar or the second busbar or applied by providing an electrode finger formed by metallizing a gap between the first electrode fingers or a gap between the second electrode fingers to integrate the first electrode fingers or the second electrode fingers.

A sensing film includes a base layer, a piezoelectric layer formed on the base layer, and a first electrode and a second electrode formed on the piezoelectric layer. The first and second electrodes are spaced apart and electrically insulated from each other. The first electrode includes a first connecting portion and a number of first extending portions coupled to the first connecting portion. The second electrode includes a second connecting portion and a number of second extending portions coupled to the second connecting portion. The first connecting portion and the second connecting portion are spaced apart and face each other. The first extending portions extend from a side of the first connecting portion toward the second connecting portion. The second extending portions extend from a side of the second connecting portion toward the first connecting portion. The first extending portions and the second extending portions are alternately arranged.