Provided are a flexible body and a method for controlling the flexible body to deform. The flexible body comprises one or more flexible units, wherein each of the flexible units comprises: a first electrode, a second electrode, an electroactive polymer layer, and a thin film transistor, wherein a source electrode or a drain electrode of the thin film transistor is electrically connected to the second electrode. The first electrode and the second electrode are configured to provide an electric field acting on the electroactive polymer layer, and the electroactive polymer layer is configured to deform in response to the electric field provided by the first electrode and the second electrode.

A semiconductor device may include: a substrate wafer, a bonding layer at least partially covering a front surface of the substrate wafer, a plurality of silicon pillars bonded to the front surface of the substrate wafer by the bonding layer, a single-crystal piezoelectric film having a first surface and an opposing second surface, a top electrode arranged adjacent to the first surface of the single-crystal piezoelectric film, and a bottom electrode arranged adjacent to the second surface of the single-crystal piezoelectric film. The single-crystal piezoelectric film may be supported by the plurality of silicon pillars such that the second surface of the piezoelectric film and the front surface of the substrate wafer enclose a cavity therebetween.

A semiconductor device may include: a substrate wafer, a bonding layer at least partially covering a front surface of the substrate wafer, a plurality of silicon pillars bonded to the front surface of the substrate wafer by the bonding layer, a single-crystal piezoelectric film having a first surface and an opposing second surface, a top electrode arranged adjacent to the first surface of the single-crystal piezoelectric film, and a bottom electrode arranged adjacent to the second surface of the single-crystal piezoelectric film. The single-crystal piezoelectric film may be supported by the plurality of silicon pillars such that the second surface of the piezoelectric film and the front surface of the substrate wafer enclose a cavity therebetween.

A piezoelectric element and a method of manufacturing the piezoelectric element are provided. The piezoelectric element is provided with a substrate having an intermediate layer disposed between a first substrate layer and a second substrate layer, a first electrode layer of an electrically conductive non-ferroelectric material disposed on the second substrate layer, a ferroelectric, piezoelectric and/or flexoelectric layer disposed on the first electrode layer, and a second electrode layer of an electrically conductive non-ferroelectric material disposed on the ferroelectric, piezoelectric and/or flexoelectric layer. The intermediate layer and/or the first substrate layer is removed below a layer stack formed by the first electrode layer, the ferroelectric, piezoelectric and/or flexoelectric layer, and the second electrode layer so that the layer stack can be moved in a translatory manner along its normal directed along the layer sequence.

An actuator that includes: a first driving body that includes a first piezoelectric material that extends in a first axis direction; a second driving body that includes a second piezoelectric material shorter than the first piezoelectric material in the first axis direction; and a base that holds the first driving body and the second driving body at proximal end portions of the first driving body and the second driving body in the first axis direction. The first driving body and the second driving body are aligned and coupled together in a polarization axis direction in a state in which a polarization axis of the first piezoelectric material and a polarization axis of the second piezoelectric material correspond with each other. A length of the second piezoelectric material in a second axis direction is greater than a length of the first piezoelectric material in the second axis direction.

A vibration apparatus may include a vibration plate, a vibration generator at the vibration plate, and a connection member between the vibration plate and the vibration generator. The vibration generator may include a vibration structure. The connection member may include a first connection member between the vibration plate and the vibration structure and overlapping the vibration structure. The connection member may also include a second connection member surrounding the first connection member. A modulus of the first connection member may be greater than a modulus of the second connection member.

[Object] To provide a technology such as a piezoelectric coil having higher energy conversion efficiency.

[Solving Means] A piezoelectric coil according to the present technology includes a coil-like core material and a plurality of band-like piezoelectric materials. The plurality of piezoelectric materials is helically wound around the core material so as to be alternately arranged along the core material.

A circuit module includes a mounting substrate including a conductor wiring, an elastic wave element provided in or on a main surface of the mounting substrate, an electric element provided in or on the main surface, the electric element being different from the elastic wave element, and an insulating resin portion provided in or on the main surface to cover the elastic wave element and the electric element. The elastic wave element and the electric element are connected to each other by the conductor wiring. A height of the elastic wave element is about 0.28 mm or less, which is less than that of the electric element. The thickness of the resin portion in a region in which the resin portion covers the elastic wave element is greater than the thickness of the resin portion in a region in which the resin portion covers the electric element.

A circuit module includes a mounting substrate including a conductor wiring, an elastic wave element provided in or on a main surface of the mounting substrate, an electric element provided in or on the main surface, the electric element being different from the elastic wave element, and an insulating resin portion provided in or on the main surface to cover the elastic wave element and the electric element. The elastic wave element and the electric element are connected to each other by the conductor wiring. A height of the elastic wave element is about 0.28 mm or less, which is less than that of the electric element. The thickness of the resin portion in a region in which the resin portion covers the elastic wave element is greater than the thickness of the resin portion in a region in which the resin portion covers the electric element.

In one embodiment, a transducer comprises a first piezoelectric stack comprising a piezoelectric material; a first layer in contact with the piezoelectric stack; and a base structure beneath the first layer. The first layer has a first displacement between a first portion of the base structure and the first layer, and the first displacement is configurable by a first bias voltage received by the transducer.