This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The non-magnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer contains at least partially crystallized Heusler alloy containing Co. The non-magnetic layer has a first non-magnetic region and a second non-magnetic region. Each of the second non-magnetic region is sandwiched between the first non-magnetic regions in a thickness direction of the non-magnetic layer. Atoms or molecules constituting each of the second non-magnetic regions are smaller than atoms or molecules constituting the first non-magnetic region. Each crystal structure of the second non-magnetic region is a NaCl type structure. At least a part of the second non-magnetic region is crystallized continuously with the first non-magnetic region and the first ferromagnetic layer or the second ferromagnetic layer.

A memory element (10) includes a free magnetization layer (12) in a film form, a nonmagnetic layer (13), and a fixed magnetization layer (14), the nonmagnetic layer (13) and the fixed magnetization layer (14) being stacked on the free magnetization layer (12). The free magnetization layer (12) stores a single bit of data 0 or 1 according to a magnetization direction and rewrites the data by reversing the magnetization direction. An antiferromagnet that exhibits the anomalous Hall effect and has a reversible magnetization direction is used for the free magnetization layer (12). The reversal of the magnetization direction of the free magnetization layer (12) is performed using the fixed magnetization layer (14) by the spin-transfer torque technique. To read data, a reading current (If) is caused to flow in one direction, and a Hall voltage generated in the free magnetization layer (12) by the anomalous Hall effect is extracted from the free magnetization layer (12). The polarity of the Hall voltage is reversed in accordance with the magnetization direction of the free magnetization layer (12).

A hall element is provided to suppress fluctuation in a Hall output voltage of the hall element which is generated due to a fluctuation in stress. The hall element may be formed to include a substrate, a magnetosensitive portion formed on the substrate, an insulating film formed on the magnetosensitive portion, four conductive portions (electrode portions and contact portions) which are formed on the insulating film, electrically connected to the magnetosensitive portion through the insulating film, and disposed at positions serving as vertexes of a quadrangle, and ball portions electrically connected to the conductive portions, and at least one ball portion is disposed on a diagonal line of the quadrangle formed by a region surrounded by the four conductive portions and above a portion where the conductive portion and the insulating film are in contact with each other.

A memory structure including a chiral spin-current supply structure is provided. The chiral spin-current supply structure includes an inner core composed of a spin-collector material, a spin-conducting insulating layer surrounding the inner core, and a charge-current conducting spin-orbit spin-current generating layer surrounding the spin-conducting insulating layer. A magnetic tunnel junction structure is in contact with a horizontal surface of the inner core of the chiral spin-current supply structure.

A memory structure including a chiral spin-current supply structure is provided. The chiral spin-current supply structure includes an inner core composed of a spin-collector material, a spin-conducting insulating layer surrounding the inner core, and a charge-current conducting spin-orbit spin-current generating layer surrounding the spin-conducting insulating layer. A magnetic tunnel junction structure is in contact with a horizontal surface of the inner core of the chiral spin-current supply structure.

This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The non-magnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer contains at least partially crystallized Heusler alloy containing Co. The non-magnetic layer has a first non-magnetic region and a second non-magnetic region. Each of the second non-magnetic region is sandwiched between the first non-magnetic regions in a thickness direction of the non-magnetic layer. Atoms or molecules constituting each of the second non-magnetic regions are smaller than atoms or molecules constituting the first non-magnetic region. Each crystal structure of the second non-magnetic region is a NaCl type structure. At least a part of the second non-magnetic region is crystallized continuously with the first non-magnetic region and the first ferromagnetic layer or the second ferromagnetic layer.

A semiconductor memory device may be provided. The semiconductor memory device may include data storage patterns having respective first sides and respective second sides, a spin-orbit coupling (SOC) channel layer in common contact with the first sides of the data storage patterns, the SOC channel layer is configured to provide a spin-orbit torque to the data storage patterns, read access transistors connected between the second sides of respective ones of the data storage patterns and respective data lines, a write access transistor connected between a first end of the SOC channel layer and a source line, and a bit line connected to a second end of the SOC channel layer. Each of the data storage patterns comprises a free layer in contact with the SOC channel layer and an oxygen reservoir layer in contact with the free layer.

A semiconductor memory device may be provided. The semiconductor memory device may include data storage patterns having respective first sides and respective second sides, a spin-orbit coupling (SOC) channel layer in common contact with the first sides of the data storage patterns, the SOC channel layer is configured to provide a spin-orbit torque to the data storage patterns, read access transistors connected between the second sides of respective ones of the data storage patterns and respective data lines, a write access transistor connected between a first end of the SOC channel layer and a source line, and a bit line connected to a second end of the SOC channel layer. Each of the data storage patterns comprises a free layer in contact with the SOC channel layer and an oxygen reservoir layer in contact with the free layer.

A charge-carrier Hall-effect sensor comprising: a semiconductor or a semimetal layer; a pair of electric current contacts in electrical contact with the semiconductor or semimetal layer and separated in a first longitudinal direction along a first electric current channel; a pair of voltage contacts in electrical contact with the semiconductor or semimetal layer and separated in a second transverse direction, orthogonal to the first direction, and positioned on either side of the electric current channel; an electrically insulating layer underlying the semiconductor or the semimetal layer; and a ferromagnetic layer underlying the electrically insulating layer comprising at least one region having a magnetic moment with a component perpendicular to a plane comprising the pair of electric current contacts and the pair of voltage contacts.

An electronic device is provided, including: a first drive electrode; a second drive electrode that is spaced apart from the first drive electrode; and a topological insulator that contacts both of the first drive electrode and the second drive electrode and has magnetism, wherein the topological insulator includes a first region having a first coercivity and a second region having a second coercivity that is different from the first coercivity. A fabrication method of a topological insulator is also provided, including: preparing a topological insulator having magnetism and a first coercivity; and forming a second region having a second coercivity that is different from the first coercivity by irradiating a partial region of the topological insulator with ions.