This magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer in contact with the spin-orbit torque wiring, in which the spin-orbit torque wiring includes a first layer, a second layer, and a third layer in order from a side closer to the first ferromagnetic layer, and a coefficient of linear expansion of a material forming the second layer is between a coefficient of linear expansion of a material forming the first layer and a coefficient of linear expansion of a material forming the third layer.

The present invention provides a graphene-containing laminate comprising. in order: a substrate: a graphene layer structure: a first metal oxide layer formed of a first metal oxide, wherein the first metal oxide is a transition metal oxide: and a second metal oxide layer formed of a second metal oxide: wherein the first metal oxide layer has a thickness of from 0.1 nm to 5 nm; and wherein the first metal oxide layer has a work function of 5 eV or more.

The present invention provides a graphene-containing laminate comprising. in order: a substrate: a graphene layer structure: a first metal oxide layer formed of a first metal oxide, wherein the first metal oxide is a transition metal oxide: and a second metal oxide layer formed of a second metal oxide: wherein the first metal oxide layer has a thickness of from 0.1 nm to 5 nm; and wherein the first metal oxide layer has a work function of 5 eV or more.

Provided is an all-electrically-controlled spintronic neuron device, a neuron circuit and a neural network. The neuron device includes: a bottom antiferromagnetic pinning layer; a synthetic antiferromagnetic layer formed on the bottom antiferromagnetic pinning layer; a potential barrier layer formed on the ferromagnetic free layer, wherein a region of the ferromagnetic free layer directly opposite to the potential barrier layer forms a threshold region; a ferromagnetic reference layer formed on the potential barrier layer; wherein the potential barrier layer, the ferromagnetic reference layer and the ferromagnetic free layer form a magnetic tunnel junction; a first antiferromagnetic pinning layer and a second antiferromagnetic pinning layer formed on an exposed region of the ferromagnetic free layer except the region directly opposite the potential barrier layer, and located on two sides of the potential barrier layer; and a first electrode formed on the ferromagnetic reference layer.

Provided is an all-electrically-controlled spintronic neuron device, a neuron circuit and a neural network. The neuron device includes: a bottom antiferromagnetic pinning layer; a synthetic antiferromagnetic layer formed on the bottom antiferromagnetic pinning layer; a potential barrier layer formed on the ferromagnetic free layer, wherein a region of the ferromagnetic free layer directly opposite to the potential barrier layer forms a threshold region; a ferromagnetic reference layer formed on the potential barrier layer; wherein the potential barrier layer, the ferromagnetic reference layer and the ferromagnetic free layer form a magnetic tunnel junction; a first antiferromagnetic pinning layer and a second antiferromagnetic pinning layer formed on an exposed region of the ferromagnetic free layer except the region directly opposite the potential barrier layer, and located on two sides of the potential barrier layer; and a first electrode formed on the ferromagnetic reference layer.

Disclosed are a magnon junction, magnon random access memory, microwave oscillator and detector, and electronic device. The magnon junction comprises: a first electrode layer formed by non-magnetic conductive material; a free magnetic layer arranged on the first electrode layer, formed by ferromagnetic conductive material; an antiferromagnetic barrier layer arranged on the free magnetic layer, formed by antiferromagnetic insulator material; a reference magnetic layer arranged on the antiferromagnetic barrier layer, formed by ferromagnetic conductive material; and a second electrode layer arranged on the reference magnetic layer, formed by non-magnetic conductive material. The reference magnetic layer has perpendicular magnetic anisotropy or perpendicular magnetic moment component, moment direction of which is fixed along a vertical direction; the free magnetic layer has perpendicular magnetic anisotropy or a perpendicular magnetic moment component, moment direction of which is flippable along the perpendicular direction; the antiferromagnetic barrier layer has perpendicular magnetic anisotropy or perpendicular magnetic moment component.

Disclosed are a magnon junction, magnon random access memory, microwave oscillator and detector, and electronic device. The magnon junction comprises: a first electrode layer formed by non-magnetic conductive material; a free magnetic layer arranged on the first electrode layer, formed by ferromagnetic conductive material; an antiferromagnetic barrier layer arranged on the free magnetic layer, formed by antiferromagnetic insulator material; a reference magnetic layer arranged on the antiferromagnetic barrier layer, formed by ferromagnetic conductive material; and a second electrode layer arranged on the reference magnetic layer, formed by non-magnetic conductive material. The reference magnetic layer has perpendicular magnetic anisotropy or perpendicular magnetic moment component, moment direction of which is fixed along a vertical direction; the free magnetic layer has perpendicular magnetic anisotropy or a perpendicular magnetic moment component, moment direction of which is flippable along the perpendicular direction; the antiferromagnetic barrier layer has perpendicular magnetic anisotropy or perpendicular magnetic moment component.

A semiconductor device includes a free magnetization layer including a ferromagnetic layer and a nonmagnetic metal layer including current electrodes receiving an input current and Hall voltage electrodes outputting a Hall voltage. The Hall voltage is generated by an anomalous Hall effect occurring in the ferromagnetic layer of the free magnetization layer due to the input current flowing in the nonmagnetic metal layer. The Hall voltage has one of a local minimum value and a local maximum value when a value of the input current sequentially changes from a first value to a second value. One of the first value and the second value is greater than the other one of the first value and the second value.

A semiconductor device includes a free magnetization layer including a ferromagnetic layer and a nonmagnetic metal layer including current electrodes receiving an input current and Hall voltage electrodes outputting a Hall voltage. The Hall voltage is generated by an anomalous Hall effect occurring in the ferromagnetic layer of the free magnetization layer due to the input current flowing in the nonmagnetic metal layer. The Hall voltage has one of a local minimum value and a local maximum value when a value of the input current sequentially changes from a first value to a second value. One of the first value and the second value is greater than the other one of the first value and the second value.

An embodiment spin-orbit torque device array includes a plurality of single devices, each device including a non-magnetic layer, a magnetic layer bonded to the non-magnetic layer, and an upper layer bonded to the magnetic layer, wherein the upper layer includes oxide, and wherein a magnetization state of each of the single devices has only two states, the two states being an up state and a down state.