A quantum processing element is disclosed. The element includes a semiconductor substrate, a dielectric material forming an interface with the semiconductor substrate, and a donor molecule embedded in the semiconductor. The donor molecule includes a plurality of dopant dots embedded in the semiconductor, each dopant dot includes one or more dopant atoms, and one or more electrons/holes confined to the dopant dots. A distance between the dopant dots is between 3 and 9 nanometres.

A method for readout of a singlet-triplet qubit in a donor based quantum processing element is disclosed. The method includes: initialising the singlet-triplet qubit in a ground state |G; performing a shelving readout; using a final measured charge configuration of the singlet-triplet qubit to determine information about a current Zeeman energy difference; and using the information about the current Zeeman energy difference to adjust mapping of the shelving readout.

A device includes a source region, a drain region, a channel region, a pair of depletion gates, an accumulation gate, and a superconductive resonator. The channel region is between the source region and the drain region. The pair of depletion gates are spaced apart from each other. The pair of depletion gates both overlap the channel region and define a quantum dot qubit region in the channel region and between the pair of depletion gates. The accumulation gate is above and crossing the pair of depletion gates. The superconductive resonator is laterally adjacent the quantum dot qubit region.

An electronic component is formed by a semiconductor component or a semiconductor-like structure having gate electrode assemblies for manipulating the quantum state of qubits in quantum dots. It comprises a substrate comprising a two-dimensional electron gas or electron hole gas. Electrical contacts connect the gate electrode assemblies to voltage sources. A first gate electrode assembly having gate electrodes is arranged on a surface of the electronic component to generate movable potential wells in the substrate. A second gate electrode assembly serves to generate a potential barrier, which is adjacent to the first gate electrode assembly. The gate electrode assemblies have parallel electrode fingers, whereby the electrode fingers of the first gate electrode assembly are periodically and alternately interconnected in order to effect an almost continuous movement of the potential wells through the substrate.

A novel and useful quantum computing machine includes classic computing and quantum computing cores. A programmable pattern generator executes instructions that control the quantum core. A pulse generator generates the control signals input to the quantum core to perform quantum operations. A partial readout of the quantum state is re-injected into the quantum core to extend decoherence time. Access gates control movement of quantum particles in the quantum core. Errors are corrected from the readout before being re-injected into the quantum core. Internal and external calibration loops calculate error syndromes and calibrate control pulses input to the quantum core. Control of the quantum core is provided from an external support unit via the pattern generator or retrieved from classic memory where sequences of commands are stored in memory. A cryostat unit functions to cool the quantum computing core to approximately 4 Kelvin.

An electronic component (10) is formed by a semiconductor component or a semiconductor-like structure having gate electrode assemblies (16, 18, 20) for moving a quantum dot (52). The electronic component (10) comprises a substrate (12) having a two-dimensional electron gas or electron hole gas. Electrical contacts connect the gate electrode assemblies (16, 18, 20) to voltage sources. A first gate electrode assembly (16) having gate electrodes (22, 24), which is arranged on a surface (14) of the electronic component in order to produce a potential well (50) in the substrate (12). The gate electrode assembly (16) has parallel electrode fingers (32, 34), wherein the electrode fingers (32, 34) are interconnected in a periodically alternating manner, which causes an almost continuous movement of the potential well (50) through the substrate (12), whereby a quantum dot (52) is transported in one direction together with this potential well (50).

An electronic structure component (10, 110, 210, 310, 410) for logically connecting qubits of a quantum computer is formed by a semiconductor component or a semiconductor-like structure. It comprises a substrate (12) with a two-dimensional electron gas or electron hole gas and gate electrode assemblies (116, 118, 120) having gate electrodes (122, 124, 126, 128), which are arranged on a surface (14) of the electronic structure component (10, 110, 210, 310, 410). Electrical contacts connect the gate electrode assemblies (116, 118, 120) to voltage sources. The gate electrodes (122, 124, 126, 128) of the gate electrode assemblies (116, 118, 120) have parallel electrode fingers (132, 134, 136, 138).

An electronic component (10, 110) is designed as a semiconductor or with a semiconductor-like structure for moving a quantum dot (68, 168) over a distance. The electronic component (10, 110) comprises a substrate (32, 132) having a two-dimensional electron gas or electron hole gas. A gate electrode assembly (16, 18, 20, 116, 118, 120) having gate electrodes (38, 40, 42, 44, 138, 140, 142, 144) is arranged on a surface (31, 131) of the electronic component (10, 110). The gate electrode assembly (16, 18, 20, 116, 118, 120) produces a potential well (66, 166) in the substrate (32, 132). Electrical terminals for connecting the gate electrode assembly (16, 18, 20, 116, 118, 120) to voltage sources are provided for this purpose. The disclosure further relates to a method for such an electronic component (10, 110).

Novel and useful quantum structures having a continuous well with control gates that control a local depletion region to form quantum dots. Local depleted well tunneling is used to control quantum operations to implement quantum computing circuits. Qubits are realized by modulating gate potential to control tunneling through local depleted region between two or more sections of the well. Complex structures with a higher number of qdots per continuous well and a larger number of wells are fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. Combining a number of elementary quantum structure, a quantum computing machine is realized. An interface device provides an interface between classic circuitry and quantum circuitry by permitting tunneling of a single quantum particle from the classic side to the quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively or nondestructively.

Processor elements are disclosed herein. A processor element comprises a silicon layer. The processor element further comprises a dielectric layer disposed upon and forming an interface with the silicon layer. The processor element further comprises a conductive via in contact with the dielectric layer, the conductive via comprising a metallic portion having an interface end closest to the dielectric layer and a distal end. A cross-sectional area of the interface end of the metallic portion of the conductive via is less than or equal to 100 nm by 100 nm. In use, the application of a bias potential to the distal end of the conductive via induces a quantum dot at the interface between the dielectric layer and the silicon layer, the quantum dot for confining one or more electrons or holes in the silicon layer. Methods are also described herein.