Reinforced materials for high temperature superconducting tape. More specifically reinforcement materials for significantly reducing the amount of required reinforcement and attaining much higher stress tolerances at practical conductor dimensions are described herein.

A superconducting wire includes: a laminated structure including a substrate having a main surface and a superconducting material layer formed on the main surface; and a reinforcing layer disposed on both side surfaces of the laminated structure in the width direction of the substrate. The reinforcing layer has an exposed end surface positioned on at least one side of the bottom surface and the top surface of the laminated structure. In a cross section in the width direction of the substrate, the ratio of the total width of the reinforcing layer to the width of the laminated structure is 1% or more and 15% or less.

A high temperature superconducting, HTS, tape. The HTS tape comprises a superconducting layer a superconducting layer formed from HTS material, a substrate, and one or more buffer layers separating the superconducting layer from the substrate. The HTS tape further comprises a plurality of holes extending at least through the superconducting layer and the one or more buffer layers and conductive material within each hole. The conductive material provides an electrical connection to the superconducting layer through the one or more buffer layers via the hole.

A method of forming a superconductor tape, includes depositing a superconductor layer on a substrate, forming a metal layer comprising a first metal on a surface of the superconductor layer, and implanting an alloy species into the metal layer where the first metal forms a metal alloy after the implanting the alloy species.

An integrated superconductor device may include a substrate base and an intermediate layer disposed on the substrate base and comprising a preferred crystallographic orientation. The integrated superconductor device may further include an oriented superconductor layer disposed on the intermediate layer and a conductive strip disposed on a portion of the oriented superconductor layer, The conductive strip may define a superconductor region of the oriented superconductor layer thereunder, and an exposed region of the oriented superconductor layer adjacent the superconductor region.

An oxide superconductor of an embodiment includes an oxide superconducting layer including at least one superconducting region containing barium (Ba), copper (Cu) and a first rare earth element, having a continuous perovskite structure, and having a size of 100 nm100 nm100 nm or more, and a non-superconducting region in contact with the at least one superconducting region, containing praseodymium (Pr), barium (Ba), copper (Cu), and a second rare earth element, having a ratio of a number of atoms of the praseodymium (Pr) to a sum of a number of atoms of the second rare earth element and the number of atoms of the praseodymium (Pr) being 20% or more, having a continuous perovskite structure continuous with the continuous perovskite structure of the superconducting region, and having a size of 100 nm100 nm100 nm or more.

A superconducting material includes YBa.sub.2Cu.sub.3O.sub.7- and a nano-structured, preferably nanowires, WO.sub.3 dopant in a range of from 0.01 to 3.0 wt. %, preferably 0.075 to 0.2 wt. %, based on total material weight. Methods of making the superconductor may preferably avoid solvents and pursue solid-state synthesis employing Y, Ba, and/or Cu oxides and/or carbonates.

A superconducting material includes YBa.sub.2Cu.sub.3O.sub.7- and a nano-structured, preferably nanowires, WO.sub.3 dopant in a range of from 0.01 to 3.0 wt. %, preferably 0.075 to 0.2 wt. %, based on total material weight. Methods of making the superconductor may preferably avoid solvents and pursue solid-state synthesis employing Y, Ba, and/or Cu oxides and/or carbonates.

A method of manufacturing an MgB2 thin film wire having an optimum average grain size is done by providing an optimum average grain size range to increase a pinning force and improve Jc with respect to the MgB2 thin film wire. In this method, the MgB2 thin film wire is made of an aggregate of MgB2 grains having a columnar structure which alignment is controlled to be in a direction perpendicular to a surface, a ratio of MgB2 to a total volume of the thin film wire is 90% or more, an average grain size of the grains is 30 nm or more and 200 nm or less by forming the MgB2 thin film having a film thickness of 1000 nm or more and 10000 nm or less in the lateral direction, and the average grain size of the grains is 40 nm or more and 100 nm or less.

A superconductor tape may be fabricated via Metal Organic Chemical Vapor Deposition (MOCVD) to achieve peel strengths greater than approximately 4.5 N/cm. The superconductor tape may be fabricated via MOCVD with a REBCO composition that includes the elements Samarium (Sm)-Barium(Ba)-Copper(Cu)-Oxygen(O). Varying levels of Copper (Cu) content can achieve peel strengths ranging between approximately 4.5 N/cm to approximately 8.0 N/cm.