A quantum device includes on a wiring pattern of first lines and second lines coupled capacitively and inductively to qubits, respectively, and third lines and fourth lines coupled capacitively and inductively to couplers, respectively. The wiring pattern includes a first pattern of adjacent three lines in which one of the second line and the fourth line is disposed between two lines selected from the first lines and the third lines, and/or a second pattern of adjacent three lines in which two lines selected from the second lines and the fourth lines are disposed on both sides of one of the first line and the third line.

A quantum device includes on a wiring pattern of first lines and second lines coupled capacitively and inductively to qubits, respectively, and third lines and fourth lines coupled capacitively and inductively to couplers, respectively. The wiring pattern includes a first pattern of adjacent three lines in which one of the second line and the fourth line is disposed between two lines selected from the first lines and the third lines, and/or a second pattern of adjacent three lines in which two lines selected from the second lines and the fourth lines are disposed on both sides of one of the first line and the third line.

An electronic device (e.g., a diode) is provided that includes a substrate and a patterned layer of superconducting material disposed over the substrate. The patterned layer forms a first electrode, a second electrode, and a loop coupling the first electrode with the second electrode by a first channel and a second channel. The first channel and the second channel have different minimum widths. The device further includes a magnet that applies a magnetic field to the loop, which produces an expulsion current in the loop that travels toward the second electrode in the first channel and toward the first electrode in the second channel. For a range of current magnitudes, when the magnetic field is applied to the patterned layer of superconducting material, the conductance from the first electrode to the second electrode is greater than the conductance from the second electrode to the first electrode.

A superconducting device includes: a substrate; a through hole provided in the substrate; a through electrode provided in the through hole, the through hole including a first portion and a second portion provided between the first portion and an inner wall surface of the through hole, in which the second portion is formed of a material including a first metal exhibiting superconductivity at a temperature lower than a criteria; a junction electrode electrically coupled to the through electrode, the junction electrode having at least a part provided outside the through hole and being formed of a material including a second metal exhibiting superconductivity at a temperature lower than a criteria; and a partition wall provided between the through electrode and the junction electrode and being formed of a material including the first metal, wherein a melting point of the first metal is higher than that of the second metal.

A superconducting device includes: a substrate; a through hole provided in the substrate; a through electrode provided in the through hole, the through hole including a first portion and a second portion provided between the first portion and an inner wall surface of the through hole, in which the second portion is formed of a material including a first metal exhibiting superconductivity at a temperature lower than a criteria; a junction electrode electrically coupled to the through electrode, the junction electrode having at least a part provided outside the through hole and being formed of a material including a second metal exhibiting superconductivity at a temperature lower than a criteria; and a partition wall provided between the through electrode and the junction electrode and being formed of a material including the first metal, wherein a melting point of the first metal is higher than that of the second metal.

A technique relates to a superconducting chip. Resonant units have resonant frequencies, and the resonant units are configured as superconducting resonators. Josephson junctions are in the resonant units, and one or more of the Josephson junctions have a shorted tunnel barrier.

A technique relates to a superconducting chip. Resonant units have resonant frequencies, and the resonant units are configured as superconducting resonators. Josephson junctions are in the resonant units, and one or more of the Josephson junctions have a shorted tunnel barrier.

A technique relates to a superconducting chip. Resonant units have resonant frequencies, and the resonant units are configured as superconducting resonators. Josephson junctions are in the resonant units, and one or more of the Josephson junctions have a shorted tunnel barrier.

A technique relates to a superconducting chip. Resonant units have resonant frequencies, and the resonant units are configured as superconducting resonators. Josephson junctions are in the resonant units, and one or more of the Josephson junctions have a shorted tunnel barrier.

The present invention is a system that produces zero noise magnetic field, which consists of: a coil made of superconducting wire, a precision current source, a Normally Closed Reed (NC) Relay, a Normally Opened (NO) Reed Relay, a cooling mechanism to maintain the superconductor temperature below the critical temperature. The precision current source generates the necessary initial current to act as source for the superconducting coil. The NO reed relay connects the precision current source to the superconductive coil. When this current start to flow, the NC Relay is used to close a superconductive path of the superconductive coil on to itself. Once the system becomes stabilized, the NO reed relay is made open, cutting off the precision source while the Normally Closed relay is closed, thereby a steady value current keeps flowing inside the superconducting coil with zero resistance and zero magnetic noise.