A device includes a first substrate having a principal surface; a second substrate having a principal surface, in which the first substrate is bump-bonded to the second substrate such that the principal surface of the first substrate faces the principal surface of the second substrate; a circuit element having a microwave frequency resonance mode, in which a first portion of the circuit element is arranged on the principal surface of the first substrate and a second portion of the circuit element is arranged on the principal surface of the second substrate; and a first bump bond connected to the first portion of the circuit element and to the second portion of the circuit element, in which the first superconductor bump bond provides an electrical connection between the first portion and the second portion.

Methods, devices, and systems are described for forming a superconducting qubit. An example device may comprise a substrate having a first surface and a patterned layer adjacent the substrate and comprising tantalum in an alpha phase. The patterned layer may comprise at least a part of a structure for storing a quantum state.

Electrical devices are disclosed. The devices include an insulating substrate. A UO.sub.2+x crystal or oriented crystal UO.sub.2+x film is on a first portion of the substrate. The UO.sub.2+x crystal or film originates and hosts a non-equilibrium polaronic quantum phase-condensate. A first lead on a second portion of the substrate is in electrical contact with the UO.sub.2+x crystal or film. A second lead on a third portion of the surface is in electrical contact with the UO.sub.2+x crystal or film. The leads are isolated from each other. A UO.sub.2+x excitation source is in operable communication with the UO.sub.2+x crystal or film. The source is configured to polarize a region of the crystal or film thereby activating the non-equilibrium quantum phase-condensate. One source state causes the UO.sub.2+x crystal or film to be conducting. Another source state causes the UO.sub.2+x crystal or film to be non-conductive.

Techniques for trapping quasiparticles in superconductor devices are provided. A superconductor device can comprise a substrate layer. The superconductor device can further comprise a first superconductor layer composed of a first superconductor material, on a first surface of a substrate layer. The superconductor device can further comprise a trapping material buried in the first superconductor layer, wherein the trapping material is formulated to trap quasiparticles.

Compositions comprising a) one or more amorphous superconductor layers bound to one or more flexible substrate layers, or b) one or more superconductor layers bound to one or more layers of a high dielectric material are disclosed. Furthermore, provided herein are articles comprising one or more compositions of the invention and method of manufacturing thereof.

A device includes a first substrate having a principal surface; a second substrate having a principal surface, in which the first substrate is bump-bonded to the second substrate such that the principal surface of the first substrate faces the principal surface of the second substrate; a circuit element having a microwave frequency resonance mode, in which a first portion of the circuit element is arranged on the principal surface of the first substrate and a second portion of the circuit element is arranged on the principal surface of the second substrate; and a first bump bond connected to the first portion of the circuit element and to the second portion of the circuit element, in which the first superconductor bump bond provides an electrical connection between the first portion and the second portion.

An electronic device includes a substrate and a layer of superconducting material disposed over the substrate. The layer of superconducting material includes a first wire and a loop that is (1) distinct and separate from the first wire and (ii) capacitively coupled to the first wire while the loop and the first wire are in a superconducting state.

A method comprising cleaning the top surface of a silicon substrate and forming a diffusion barrier by depositing a metal on top the top surface of the silicon substrate. The diffusion barrier is formed one monolayer at a time and wherein the diffusion barrier will have a height of about 1 to 3 nm. Forming a layer of crystalline Niobium on top of the diffusion barrier.

A method for the production of a superconducting wire (20) uses a monofilament (1) having a powder core (3) that contains at least Sn and Cu, an inner tube (2), made of Nb or an alloy containing Nb, that encloses the powder core (3), and an outer tube (4) in which the inner tube (2) is arranged. The outer side of the inner tube (2) is in contact with the inner side of the outer tube (4) and the outer tube (4) is produced from Nb or from an alloy containing Nb. The outer tube is disposed in a cladding tube. The superconducting current carrying capacity of the superconducting wire is thereby improved.

In various embodiments, superconducting wires incorporate diffusion barriers composed of Nb alloys or Nb—Ta alloys that resist internal diffusion and provide superior mechanical strength to the wires.