A Josephson junction device includes a planar arrangement including a first two-dimensional (2D) material layer, a graphene layer, and a second 2D material layer planarly arranged on a device substrate, the first 2D material layer including at least one layer of a 2D material, the graphene layer forming a first junction with the first 2D material layer, and the second 2D material layer forming a second junction with the graphene layer and including at least one layer of a 2D material. A distance between the first junction and the second junction is within a range configured to cause a Josephson effect.

According to an embodiment of the present invention, a method of producing a computing device includes providing a semiconductor substrate, and patterning a mask on the semiconductor substrate, the mask exposing a first portion of the semiconductor substrate and covering a second portion of the semiconductor substrate. The method includes implanting the first portion of the semiconductor substrate with a dopant. The method includes annealing the first portion of the semiconductor substrate to form an annealed doped region, while maintaining the second portion of the semiconductor substrate as an unannealed portion.

A superconductor wire can achieve a J.sub.e of at least 600 A/mm.sup.2 at 4.2 K, 20 T applied magnetic field, which is greater than J.sub.e previously reported in the literature. The superconductor wire can include superconductor tape stands that have I.sub.c per total strand width of at least 125 A/mm at 4.2 K, 20 T applied magnetic field. In an embodiment, the superconductor wire can have superconductor film with a modified REBCO composition, where (Ba+M)/Cu is at least 0.72. In the same or different embodiment, the superconductor film can have a thickness of at least 3 microns. The superconductor tape strands can have a stabilizer layer, where the thickness of the stabilizer is selected so that the neutral plane of the strands is near or passes through the superconductor film. A superconductor cable can be made from superconductor wires.

One example includes a magnetic Josephson junction (MJJ) system. The system includes a first superconducting material layer and a second superconducting material layer each configured respectively as a galvanic contacts. The system also includes a ferrimagnetic material layer arranged between the first and second superconducting material layers and that is configured to exhibit a fixed net magnetic moment at a predetermined operating temperature of the MJJ system. The system also includes a ferromagnetic material layer arranged between the first and second superconducting material layers and that is configured to exhibit a variable magnetic orientation in response to an applied magnetic field. The MJJ system can be configured to store a binary logical value based on a direction of the variable magnetic orientation of the ferromagnetic material layer. The system further includes a spacer layer arranged between the ferromagnetic and the ferrimagnetic material layers.

Josephson junction (JJ) structures are disclosed. In some embodiments, a JJ structure may include a non-superconducting structure having a hollow region. A first superconducting structure may be disposed inside the hollow region of the non-superconducting structure, and a second superconducting structure may be disposed around the non-superconducting structure outside the hollow region.

A system that includes: an array of qubits, each qubit of the array of qubits comprising a first electrode corresponding to a first node and a second electrode corresponding to a second node, wherein, for a first qubit in the array of qubits, the first qubit is positioned relative to a second qubit in the array of qubits such that a charge present on the first qubit induces a same charge on each of the first node of the second qubit and the second node of the second qubit, such that coupling between the first qubit and the second qubit is reduced, and wherein none of the nodes share a common ground is disclosed.

A sensor element including a diamond in which nitrogen-vacancy centers in a diamond crystal structure stabilize in a negative charge state. By ensuring that the diamond of the sensor element is n-type phosphorus-doped and contains nitrogen-vacancy centers in the crystal structure, the probability that nitrogen-vacancy centers in the diamond lattice are in a neutral state decreases, and the nitrogen-vacancy centers stabilize in a negative charge state.

A graphene/doped 2D layered material Van der Waals heterojunction superconducting composite structure, a superconducting device and a manufacturing method therefor, which relate to the technical field of superconducting materials. Said structure includes: a (2n+1)-layered structure formed by graphene layers and doped 2D layered materials which are alternately provided. An outer layer of the layered structure is the graphene layer, n is an integer between 1 to 50, a superconducting region is formed by a region in which the graphene perpendicularly overlaps the doped 2D layered material, and the graphene layers and the doped two-dimensional layered materials are self-assembled into one piece by means of a Van der Waals force.

A graphene/doped 2D layered material Van der Waals heterojunction superconducting composite structure, a superconducting device and a manufacturing method therefor, which relate to the technical field of superconducting materials. Said structure includes: a (2n+1)-layered structure formed by graphene layers and doped 2D layered materials which are alternately provided. An outer layer of the layered structure is the graphene layer, n is an integer between 1 to 50, a superconducting region is formed by a region in which the graphene perpendicularly overlaps the doped 2D layered material, and the graphene layers and the doped two-dimensional layered materials are self-assembled into one piece by means of a Van der Waals force.

Devices, systems, and/or methods that can facilitate plating one or more metal layers onto a niobium-titanium substrate are provided. According to an embodiment, a device can comprise a niobium-titanium substrate. The device can further comprise a first metal layer plated on a portion of the niobium-titanium substrate. The device can further comprise a second metal layer plated on the first metal layer. The device can further comprise a third metal layer plated on the second metal layer.