A one time programmable non-volatile memory cell includes a storage element. The storage element includes a glass substrate, a buffer layer, a polysilicon layer and a metal layer. The buffer layer is disposed on the glass substrate. The polysilicon layer is disposed on the buffer layer. A P-type doped region and an N-type doped region are formed in the polysilicon layer. The metal layer is contacted with the N-type doped region and the P-type doped region. The metal layer, the N-type doped region and the P-type doped region are collaboratively formed as a diode. When a program action is performed, the first diode is reverse-biased, and the diode is switched from a first storage state to a second storage state. When a read action is performed, the diode is reverse-biased and the diode generates a read current.

A method of fabricating a variable resistance memory device includes: forming a bottom electrode on a substrate; forming a dielectric layer on the substrate, wherein the dielectric layer has a first trench that exposes the bottom electrode; forming a variable resistance layer in the first trench; and irradiating the variable resistance layer with a laser, wherein the variable resistance layer is irradiated by the laser for a time of about 1.8 μs to about 54 μs.

A phase change memory bridge cell comprising a dielectric layer located on top of a at least one electrode, wherein a trench is located in the dielectric layer. A first liner located at the bottom of the trench in the dielectric layer and the first liner is located on the sidewalls of the dielectric layer that forms the sidewalls of the trench. A phase change memory material located on top of the first liner, wherein a top surface of the phase change memory material is aligned with a top surface of the dielectric layer, wherein the dielectric layer is located adjacent to and surrounding the vertical sidewalls of the phase change memory material, wherein a top surface of the phase change memory material is flush with a top surface of the dielectric layer.

A semiconductor device including at least one memory cell is provided. The memory cell includes: a first electrode layer; a second electrode layer; a selection element layer coupled between the first electrode layer and the second electrode layer; and an insulating layer coupled between the first electrode layer and the second electrode such that a side surface of the insulating layer is in contact with a side surface of the selection element layer, wherein the selection element layer includes an insulating material doped with a first element, and wherein the insulating layer includes the insulating material doped with the first element at a lower concentration than the selection element layer, or the insulating material not doped with the first element.

The present disclosure, in some embodiments, relates to a resistive random access memory (RRAM) cell. The RRAM cell has a bottom electrode over a substrate. A data storage layer is over the bottom electrode and has a first thickness. A capping layer is over the data storage layer. The capping layer has a second thickness that is in a range of between approximately 1.9 and approximately 3 times thicker than the first thickness. A top electrode is over the capping layer.

A process is provided to trim PCRAM cells to have consistent programming curves. Initial programming curves of PCRAM cells are measured. A target programming curve is set up for the PCRAM cells. Each PCRAM cell is then modulated individually to meet the target programming curve.

A method for locally annealing and crystallizing a thin film by directing ultrashort optical pulses from an ultrafast laser into the film. The ultrashort pulses can selectively produce an annealed pattern and/or activate dopants on the surface or within the film.

A resistive random-access memory cell includes a well region, a first doped region, a second doped region, a third doped region, a first gate structure, a second gate structure and a third gate structure. The first gate structure is formed over the surface of the well region between the first doped region and the second doped region. The second gate structure is formed over the second doped region. The third gate structure is formed over the surface of the well region between the second doped region and the third doped region. A first metal layer is connected with the first doped region and the third doped region. A second metal layer is connected with the conductive layer of the first gate structure and the conductive layer of the third gate structure.

A projected memory device includes a carbon-based projection component. The device includes two electrodes, a memory segment, and a projection component. The projection component and the memory segment form a dual element that connects the two electrodes. The projection component extends parallel to and in contact with the memory segment. The memory segment includes a resistive memory material, while the projection component includes a thin film of non-insulating material that essentially comprises carbon. In a particular implementation, the non-insulating material and the projection component essentially comprises amorphous carbon. Using carbon and, in particular, amorphous carbon, as a main component of the projection component, allows unprecedented flexibility to be achieved when tuning the electrical resistance of the projection component.

A method for separating a removable composite structure using a light flux includes supplying the removable composite structure, which successively comprises: a substrate that is transparent to the light flux; an optically absorbent layer for at least partially absorbing a light flux; a sacrificial layer adapted to dissociate subject to the application of a temperature higher than a dissociation temperature and made of a material different from that of the optically absorbent layer; and at least one layer to be separated. The method further includes applying a light flux through the substrate, the light flux being at least partly absorbed by the optically absorbent layer, so as to heat the optically absorbent layer; heating the sacrificial layer by thermal conduction from the optically absorbent layer, up to a temperature that is greater than or equal to the dissociation temperature; and dissociating the sacrificial layer under the effect of the heating.