The present technology relates to an oxide thin film. The oxide thin film of the present technology may include a single crystal substrate; and a main oxide layer laminated on the single crystal substrate and doped with dissimilar metal elements, wherein in energy-dispersive X-ray spectroscopy (EDX) using a transmission electron microscope (TEM), the dissimilar metal elements and metal elements of a metal oxide constituting the main oxide layer may be uniformly distributed. The present technology may provide an oxide thin film showing MIT characteristics of improved reliability, sensitivity, accuracy, and reproducibility.

The present technology relates to an oxide thin film. The oxide thin film of the present technology may include a single crystal substrate; and a main oxide layer laminated on the single crystal substrate and doped with dissimilar metal elements, wherein in energy-dispersive X-ray spectroscopy (EDX) using a transmission electron microscope (TEM), the dissimilar metal elements and metal elements of a metal oxide constituting the main oxide layer may be uniformly distributed. The present technology may provide an oxide thin film showing MIT characteristics of improved reliability, sensitivity, accuracy, and reproducibility.

The present technology relates to an oxide thin film. The oxide thin film of the present technology may include a single crystal substrate; and a main oxide layer laminated on the single crystal substrate and doped with dissimilar metal elements, wherein in energy-dispersive X-ray spectroscopy (EDX) using a transmission electron microscope (TEM), the dissimilar metal elements and metal elements of a metal oxide constituting the main oxide layer may be uniformly distributed. The present technology may provide an oxide thin film showing MIT characteristics of improved reliability, sensitivity, accuracy, and reproducibility.

The present technology relates to an oxide thin film. The oxide thin film of the present technology may include a single crystal substrate; and a main oxide layer laminated on the single crystal substrate and doped with dissimilar metal elements, wherein in energy-dispersive X-ray spectroscopy (EDX) using a transmission electron microscope (TEM), the dissimilar metal elements and metal elements of a metal oxide constituting the main oxide layer may be uniformly distributed. The present technology may provide an oxide thin film showing MIT characteristics of improved reliability, sensitivity, accuracy, and reproducibility.

Some implementations described herein include a semiconductor device including a thin film resistor structure and techniques for forming the thin film resistor structure. Techniques described herein include forming a layer of a resistive material using a dual-component physical vapor deposition process and forming contact structures on the layer of resistive material by directly patterning a layer of conductive material on the layer of the resistive material. The techniques further include oxidizing a surface of the layer of the resistive material between the contact structures.

Some implementations described herein include a semiconductor device including a thin film resistor structure and techniques for forming the thin film resistor structure. Techniques described herein include forming a layer of a resistive material using a dual-component physical vapor deposition process and forming contact structures on the layer of resistive material by directly patterning a layer of conductive material on the layer of the resistive material. The techniques further include oxidizing a surface of the layer of the resistive material between the contact structures.

A resistor includes a substrate, a pair of inner electrodes, a thin-film resistive layer, a pair of backside electrodes, and a thick-film resistive layer. The substrate includes a first surface and a second surface opposite to the first surface. The pair of inner electrodes is disposed on two opposite ends of the first surface, respectively. The thin-film resistive layer is disposed on the first surface and contacts the pair of inner electrodes, wherein the thin-film resistive layer has a first resistance value and includes a trimming groove. The pair of backside electrodes is disposed on two opposite ends of the second surface, respectively. The thick-film resistive layer is disposed on the second surface and contacts the pair of backside electrodes, wherein the thick-film resistive layer has a second resistance value, and the second resistance value is greater than 100 times of the first resistance value.

A resistor includes a substrate, a pair of inner electrodes, a thin-film resistive layer, a pair of backside electrodes, and a thick-film resistive layer. The substrate includes a first surface and a second surface opposite to the first surface. The pair of inner electrodes is disposed on two opposite ends of the first surface, respectively. The thin-film resistive layer is disposed on the first surface and contacts the pair of inner electrodes, wherein the thin-film resistive layer has a first resistance value and includes a trimming groove. The pair of backside electrodes is disposed on two opposite ends of the second surface, respectively. The thick-film resistive layer is disposed on the second surface and contacts the pair of backside electrodes, wherein the thick-film resistive layer has a second resistance value, and the second resistance value is greater than 100 times of the first resistance value.

The present technology relates to an oxide thin film. The oxide thin film of the present technology may include a single crystal substrate; and a main oxide layer laminated on the single crystal substrate and doped with dissimilar metal elements, wherein in energy-dispersive X-ray spectroscopy (EDX) using a transmission electron microscope (TEM), the dissimilar metal elements and metal elements of a metal oxide constituting the main oxide layer may be uniformly distributed. The present technology may provide an oxide thin film showing MIT characteristics of improved reliability, sensitivity, accuracy, and reproducibility.

The present technology relates to an oxide thin film. The oxide thin film of the present technology may include a single crystal substrate; and a main oxide layer laminated on the single crystal substrate and doped with dissimilar metal elements, wherein in energy-dispersive X-ray spectroscopy (EDX) using a transmission electron microscope (TEM), the dissimilar metal elements and metal elements of a metal oxide constituting the main oxide layer may be uniformly distributed. The present technology may provide an oxide thin film showing MIT characteristics of improved reliability, sensitivity, accuracy, and reproducibility.