A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may include a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may include of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

A shunt resistor includes: a resistive element; and a first terminal portion and a second terminal portion. The resistive element has a first end and a second end in a second direction orthogonal to a first direction that is a thickness direction of the resistive element, the second end being an end opposite to the first end, and the resistive element has a third end and a fourth end in a third direction orthogonal to the first direction and the second direction, the fourth end being an end opposite to the third end. The first terminal portion and the second terminal portion are joined to the first end and the second end, respectively.

A shunt resistor includes: a resistive element; and a first terminal portion and a second terminal portion. The resistive element has a first end and a second end in a second direction orthogonal to a first direction that is a thickness direction of the resistive element, the second end being an end opposite to the first end, and the resistive element has a third end and a fourth end in a third direction orthogonal to the first direction and the second direction, the fourth end being an end opposite to the third end. The first terminal portion and the second terminal portion are joined to the first end and the second end, respectively.

A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may include of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may consist of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

A method for manufacturing a shunt resistor is provided. In this method, a resistance piece is attached to an insulating carrier film. An electroplating operation is performed to form an electrode material layer on a surface of the resistance piece. A first mechanical dicing operation is performed to respectively dice the electrode material layer and the resistance piece into plural electrode layers and plural resistance layers to form plural strip structures. Each of the strip structures includes one electrode layer and one resistance layer. A second mechanical dicing operation is performed on the strip structures to dice the electrode layer on each of the strip structures into a first electrode and a second electrode. A third mechanical dicing operation is performed on each of the strip structures to separate each of the strip structures into plural shunt resistors. A trimming operation is performed on each of the shunt resistors.

A method for manufacturing a shunt resistor is provided. In this method, a resistance piece is attached to an insulating carrier film. An electroplating operation is performed to form an electrode material layer on a surface of the resistance piece. A first mechanical dicing operation is performed to respectively dice the electrode material layer and the resistance piece into plural electrode layers and plural resistance layers to form plural strip structures. Each of the strip structures includes one electrode layer and one resistance layer. A second mechanical dicing operation is performed on the strip structures to dice the electrode layer on each of the strip structures into a first electrode and a second electrode. A third mechanical dicing operation is performed on each of the strip structures to separate each of the strip structures into plural shunt resistors. A trimming operation is performed on each of the shunt resistors.