A uniform cluster of nanocompositions suspended in a liquid media is provided. Methods of making such nanocompositions, and uses of such nanocompositions are also provided. The nanocompositions can be used for nucleic acid extraction and diagnostic assays, for immunoassays, for cell separation, identification and modulation, for controlled functional molecule protection and release, for assays used in the clinic (companion diagnostics) or in the therapeutic development process (drug target validation), and in a system for transcatheter arterial chemoembolization, and demonstrate superior performance due to the uniform property or monodispersity.

The present invention provides a rare earth thin film magnet having Nd, Fe, and B as essential components, wherein the rare earth thin film magnet has a texture in which an α-Fe phase and a Nd.sub.2Fe.sub.14B phase are alternately arranged three-dimensionally, and each phase has an average crystal grain size of 10 to 30 nm. An object of this invention is to provide a rare earth thin film magnet having superior mass productivity and reproducibility and favorable magnetic properties, as well as to provide the production method thereof and a target for producing the thin film.

The invention provides a nanocomposite magnet, which has achieved high coercive force and high residual magnetization. The magnet is a non-ferromagnetic phase that is intercalated between a hard magnetic phase with a rare-earth magnet composition and a soft magnetic phase, wherein the non-ferromagnetic phase reacts with neither the hard nor soft magnetic phase. A hard magnetic phase contains Nd.sub.2Fe.sub.14B, a soft magnetic phase contains Fe or Fe.sub.2Co, and a non-ferromagnetic phase contains Ta. The thickness of the non-ferromagnetic phase containing Ta is 5 nm or less, and the thickness of the soft magnetic phase containing Fe or Fe.sub.2Co is 20 nm or less. Nd, or Pr, or an alloy of Nd and any one of Cu, Ag, Al, Ga, and Pr, or an alloy of Pr and any one of Cu, Ag, Al, and Ga is diffused into a grain boundary phase of the hard magnetic phase of Nd.sub.2Fe.sub.14B.

A storage element and storage devices containing the same, having a layered structure and being configured for storing information are disclosed. In one example, the storage element comprises a storage portion with a storage magnetization that is perpendicular to a film surface of the layered structure, wherein a direction of the storage magnetization is configured to change according to the information. The storage element also includes a fixed magnetization portion with reference magnetization serving as a reference to the storage magnetization, and an intermediate portion between the storage portion and the fixed magnetization portion that is made of a non-magnetic material. The fixed magnetization portion includes a laminated ferrimagnetic structure that comprises a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The fixed magnetization portion includes a first magnetic material that is an alloy or a laminated structure including Pt, Co, and Y.

In the systems and methods for synthesizing a thin film with desired properties (e.g. magnetic, conductivity, photocatalyst, etc.), a metal oxide film may be deposited on a substrate. The metal oxide film may be achieved utilizing any suitable method. A reducing agent may be deposited before, after or both before and after the metal oxide layer. Oxygen may be removed or liberated from the deposited metal oxide film by low temperature local or global annealing. As a result of the annealing to remove oxygen, one or more portions of the metal oxide may be transformed into materials with desired properties. As a nonlimiting example, a metal oxide film may be treated to provide a magnetic multilayer film that is suitable for bit patterned media.

A method for making an ordered magnetic alloy includes (a) providing a thermally conductive base having opposite first and second surfaces; (b) forming a thermal barrier layer on the first surface of the thermally conductive base; (c) forming a disordered magnetic alloy layer on the thermal barrier layer, the disordered magnetic alloy layer being made from a disordered alloy which contains a first metal selected from Fe, Co, and Ni, and a second metal selected from Pt and Pd; and (d) after step (c), applying a transient heat to the thermally conductive base to cause rapid thermal expansion of the thermally conductive base, which, in turn, causes generation of an in-plane tensile stress in the disordered magnetic alloy layer.

A method for inducing tunable ferromagnetism with hydrogen annealing in delafossite films includes obtaining a PdCoO.sub.2 thin film, positioning the PdCoO2 thin film on a substrate, annealing the PdCoO.sub.2 thin film by hydrogenation, and cooling the PdCoO.sub.2 thin film to approximately room temperature.

A method for inducing tunable ferromagnetism with hydrogen annealing in delafossite films includes obtaining a PdCoO.sub.2 thin film, positioning the PdCoO2 thin film on a substrate, annealing the PdCoO.sub.2 thin film by hydrogenation, and cooling the PdCoO.sub.2 thin film to approximately room temperature.

The present disclosure includes a thin film assembly comprising a substrate and an epitaxial crystalline thin film disposed on the substrate, wherein the epitaxial crystalline thin film is a single crystal, wherein at least a portion of the epitaxial crystalline thin film is doped with rare-earth ions at a concentration of less than 100 parts per billion. The disclosure further includes a method of manufacturing a thin film assembly, the method comprising creating, on a substrate and with use of molecular beam epitaxy, an epitaxial crystalline thin film doped with the rare-earth ions at a concentration of less than 100 parts per billion.

The invention comprises a novel composite multi-stack seed layer (CMSL) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)].sub.n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.