An integrated circuit is a layered device, on a semiconductor substrate, which contains metal electrodes that sandwich a piezoelectric layer, followed by a magnetostrictive layer and a metal coil. The metal electrodes define an electrical port across which to receive an alternating current (AC) voltage, which is applied across the piezoelectric layer to cause a time-varying strain in the piezoelectric layer. The magnetostrictive layer is to translate the time-varying strain, received by way of a vibration mode from interaction with the piezoelectric layer, into a time-varying electromagnetic field. The metal coil, disposed on the magnetostrictive layer, includes a magnetic port at which to induce a current based on exposure to the time-varying electromagnetic field generated by the magnetostrictive layer.

A kind of nano-porous FePt alloys with strong permanent magnetism and a preparation method therefor. The nano-porous FePt alloys have the composition of Fe.sub.wCo.sub.xPt.sub.yPd.sub.z and are composed of an ordered hard magnetic L1.sub.0-FePt phase, and have an integrated doubly-connected nano-porous structure with pore sizes of 10-50 nm, and ligament thicknesses of 20-80 nm. Under an applied magnetic field of 50 kOe, the coercivity, magnetization intensity and remanence of the alloys are 13.4-18.5 kOe, 40.4-56.3 emu/g and 28.3-37.4 emu/g, respectively. The master alloy ingots are prepared using electric arc melting or induction melting; the alloy ribbons are prepared using the single-roller melt-spinning equipment; the precursors mainly containing nano-composite phases of hard magnetic L1.sub.0-FePt and soft magnetic Fe.sub.2B are obtained directly by the melt-spinning or obtained by conducting vacuum annealing on the melt-spun ribbons; and the nano-porous FePt alloys with a single L1.sub.0-FePt phase are obtained by the electrochemical dealloying technique, thereby filling in the technical blank of nano-porous metal materials with permanent magnetism.

An MTJ structure having vertical magnetic anisotropy is provided. The MTJ structure having vertical magnetic anisotropy can comprise: a substrate; an artificial antiferromagnetic layer located on the substrate; a buffer layer located on the artificial antiferromagnetic layer, and including W or an alloy containing W; a first ferromagnetic layer located on the buffer layer, and having vertical magnetic anisotropy; a tunneling barrier layer located on the first ferromagnetic layer; and a second ferromagnetic layer located on the tunneling barrier layer, and having vertical magnetic anisotropy. Accordingly, in the application of bonding the artificial antiferromagnetic layer with a CoFeB/MgO/CoFeB structure, the MTJ structure having improved thermal stability at high temperature can be provided by using the buffer layer therebetween.

Spintronic devices based on metallic antiferromagnets having a non-collinear spin structure are provided. Also provided are methods for operating the devices. The spintronic devices are based on a bilayer structure that includes a spin torque layer of an antiferromagnetic material having a non-collinear triangular spin structure adjoining a layer of ferromagnetic material.

Spintronic devices based on metallic antiferromagnets having a non-collinear spin structure are provided. Also provided are methods for operating the devices. The spintronic devices are based on a bilayer structure that includes a spin torque layer of an antiferromagnetic material having a non-collinear triangular spin structure adjoining a layer of ferromagnetic material.

A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.

Various embodiments to mitigate the contamination of electroplated cobalt-platinum films on substrates are described. In one embodiment, a method of manufacture of a device includes depositing a diffusion barrier over a substrate, depositing a seed layer upon the diffusion barrier, and depositing a cobalt-platinum magnetic layer upon the seed layer. In a second embodiment, a method of manufacture of a device may include depositing a diffusion barrier over a substrate and depositing a cobalt-platinum magnetic layer upon the diffusion barrier. In a third embodiment, a method of manufacture of a device may include depositing an adhesion layer over a substrate, depositing a seed layer upon the adhesion layer, and depositing a cobalt-platinum magnetic layer over the seed layer. Based in part on these methods of manufacture, improvements in the interfaces between the layers can be achieved after annealing with substantial improvements in the magnetic properties of the cobalt-platinum magnetic layer.

The present disclosure is directed to a spin current magnetization rotational element, a spin-orbit-torque magnetoresistance effect element, a magnetic memory, and a high-frequency magnetic element which can efficiently generate a pure spin current and reduce a reversal current density. The spin current magnetization rotational element includes: a spin-orbit torque wiring extending in a first direction; and a first ferromagnetic layer laminated in a second direction which intersects the first direction, wherein the spin-orbit torque wiring includes at least one rare gas element of Ar, Kr, and Xe.

A magnetoresistance effect element is provided in which a MR ratio is not likely to decrease even at a high bias voltage. A magnetoresistance effect element according to an aspect of the present invention includes: a first ferromagnetic metal layer; a second ferromagnetic metal layer; a tunnel barrier layer that is provided between the first ferromagnetic metal layer and the second ferromagnetic metal layer, in which the tunnel barrier layer is formed of a non-magnetic oxide having a cubic crystal structure represented by a compositional formula A.sub.1-xA.sub.xO, where A represents a divalent cation, and A represents a trivalent cation, and the number of A ions is more than the number of

A ions in a primitive lattice of the crystal structure.

A magnetoresistance effect element is provided in which a MR ratio is not likely to decrease even at a high bias voltage. A magnetoresistance effect element according to an aspect of the present invention includes: a first ferromagnetic metal layer; a second ferromagnetic metal layer; a tunnel barrier layer that is provided between the first ferromagnetic metal layer and the second ferromagnetic metal layer, in which the tunnel barrier layer is formed of a non-magnetic oxide having a cubic crystal structure represented by a compositional formula A.sub.1-xA.sub.xO, where A represents a divalent cation, and A represents a trivalent cation, and the number of A ions is more than the number of

A ions in a primitive lattice of the crystal structure.