A synthetic antiferromagnetic structure for a spintronic device is disclosed and has an FL2/Co or Co alloy/antiferromagnetic coupling/Co or Co alloy/CoFeB configuration where FL2 is a ferromagnetic free layer with intrinsic PMA. Antiferromagnetic coupling is improved by inserting a Co or Co alloy dusting layer on top and bottom surfaces of the antiferromagnetic coupling layer. The FL2 layer may be a L10 ordered alloy, a rare earth-transition metal alloy, or an (A1/A2).sub.n laminate where A1 is one of Co, CoFe, or an alloy thereof, and A2 is one of Pt, Pd, Rh, Ru, Ir, Mg, Mo, Os, Si, V, Ni, NiCo, and NiFe, or A1 is Fe and A2 is V. A method is also provided for forming the synthetic antiferromagnetic structure.

An exchange-coupled film includes an antiferromagnetic layer, pinned magnetic layer, and free magnetic layer which are stacked. The antiferromagnetic layer is composed of a PtCr sublayer and an XMn sublayer (where X is Pt or Ir). The XMn sublayer is in contact with the pinned magnetic layer.

Technologies for high-performance magnetoelectric spin-orbit (MESO) logic structures are disclosed. In the illustrative embodiment, the spin-orbit coupling layer of a MESO logic structure is a high-entropy perovskite. The use of a high-entropy perovskite provides versatility through tunability, as there is a wide range of possible combinations. Additional layers of the MESO logic structure may also be perovskites, such as the magnetoelectric layer and ferromagnetic layer. The various perovskite layers may be epitaxially compatible, allowing for growth of high-quality layers.

Technologies for high-performance magnetoelectric spin-orbit (MESO) logic structures are disclosed. In the illustrative embodiment, the spin-orbit coupling layer of a MESO logic structure is a high-entropy perovskite. The use of a high-entropy perovskite provides versatility through tunability, as there is a wide range of possible combinations. Additional layers of the MESO logic structure may also be perovskites, such as the magnetoelectric layer and ferromagnetic layer. The various perovskite layers may be epitaxially compatible, allowing for growth of high-quality layers.

The present disclosure is directed to a spin current magnetization rotational element, a spin-orbit-torque magnetoresistance effect element, a magnetic memory, and a high-frequency magnetic element which can efficiently generate a pure spin current and reduce a reversal current density. The spin current magnetization rotational element includes: a spin-orbit torque wiring extending in a first direction; and a first ferromagnetic layer laminated in a second direction which intersects the first direction, wherein the spin-orbit torque wiring includes at least one rare gas element of Ar, Kr, and Xe.

The present disclosure provides a composite substrate for an antenna module, which includes: a first non-magnetic substrate that is configured to have a first copper foil; a second non-magnetic substrate that is configured to have a second copper foil; and a magnetic sheet that is configured to be interposed between the first non-magnetic substrate and the second non-magnetic substrate and that is configured to be integrally laminated with the non-magnetic substrates, and further provides a preparation method thereof. The present disclosure provides a simplification of a process, low costs, a slim design, and a grip-feeling of a metal material while providing functions of wireless charging, MST, and NFC.

The present disclosure provides a composite substrate for an antenna module, which includes: a first non-magnetic substrate that is configured to have a first copper foil; a second non-magnetic substrate that is configured to have a second copper foil; and a magnetic sheet that is configured to be interposed between the first non-magnetic substrate and the second non-magnetic substrate and that is configured to be integrally laminated with the non-magnetic substrates, and further provides a preparation method thereof. The present disclosure provides a simplification of a process, low costs, a slim design, and a grip-feeling of a metal material while providing functions of wireless charging, MST, and NFC.

The disclosed technology generally relates to semiconductor devices, and more particularly to a device configured as one or both of a spin wave generator or a spin wave detector. In one aspect, the device includes a magnetostrictive film and a deformation film physically connected to the magnetorestrictive film. The device also includes an acoustic isolation surrounding the magnetostrictive film and the deformation film to form an acoustic resonator. When the device is configured as the spin wave generator, the deformation film is configured to undergo a change physical dimensions in response to an actuation, where the change in the physical dimensions of the deformation film induces a mechanical stress in the magnetostrictive film to cause a change in the magnetization of the magnetostrictive film. When the device is configured as the spin wave detector, the magnetostrictive film is configured to undergo to a change in physical dimensions in response to a change in magnetization, wherein the change in the physical dimensions of the magnetostrictive film induces a mechanical stress in the deformation film to cause generation of electrical power by the deformation film.

The invention relates to magnetic thin films including a single magnetic layer of La.sub.(1-x)Sr.sub.xMnO.sub.3 deposited on a non-magnetic substrate. The invention further relates to devices comprising said magnetic thin films and methods of manufacture.

A synthetic antiferromagnetic (SAF) structure for a spintronic device is disclosed and has an FL2/AF coupling/CoFeB configuration where FL2 is a ferromagnetic free layer with intrinsic PMA. In one embodiment, AF coupling is improved by inserting a Co dusting layer on top and bottom surfaces of a Ru AF coupling layer. The FL2 layer may be a L10 ordered alloy, a rare earth-transition metal alloy, or an (A1/A2).sub.n laminate where A1 is one of Co, CoFe, or an alloy thereof, and A2 is one of Pt, Pd, Rh, Ru, Ir, Mg, Mo, Os, Si, V, Ni, NiCo, and NiFe, or A1 is Fe and A2 is V. A method is also provided for forming the SAF structure.