Disclosed is a system (10) for generating skyrmions, including: a gun (12) including a wall-forming region (14) made from a first material, the region (14) defining an outer space (16) made from a second material different from the first material and an inner space (18) made from a third material different from the first material, the second material and the third material being magnetic materials; and a magnetisation reversal device (26) that can reverse the magnetisation at the interface between the region (14) and the inner space (18).

A magnetic memory device includes a conductive line extending in a first direction, a bottom electrode provided on a portion of a bottom surface of the conductive line, a free layer and a pinned layer stacked on the conductive line, a spacer layer between the free layer and the pinned layer, and a top electrode provided on a portion of a top surface of the pinned layer. The conductive line, the free layer, the pinned layer and the spacer layer have side surfaces perpendicular to the first direction, and the side surfaces are aligned with each other.

A stress sensor includes a stress detection layer including a laminated body including a first magnetic layer, a first non-magnetic layer, and a second magnetic layer that are laminated, wherein the first magnetic layer and the second magnetic layer have mutually different magnetoelastic coupling constants, such that a stress is detected by an electrical resistance dependent on a relative angle of magnetization between the first magnetic layer and the second magnetic layer varying depending on the stress externally applied.

A receiving device includes a magnetic element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first ferromagnetic layer is configured to be irradiated with light containing an optical signal with a change of intensity of the light, and wherein the receiving device is configured to receive the optical signal on a basis of an output voltage from the magnetic element.

An adder device for binary magnetic applied fields uses Interlayer Exchange Coupling (IEC) structure where two layers of ferromagnetic material are separated from each other by non-magnetic layers of electrically conductive material of atomic thickness, sufficient to generate anti-magnetic response in a magnetized layer. A set of regions are positioned on a top layer above a continuous bottom layer, and the regions excited with magnetization for A and not A, B and not B, and C and not C to form a sum and an inverse carry output magnetization.

A magnetoresistance effect element and a Heusler alloy in which a state change due to annealing does not easily occur. The element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, in which at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy in which a portion of elements of an alloy represented by Co.sub.2Fe.sub.αZ.sub.β is substituted with a substitution element, in which Z is one or more elements selected from the group consisting of Al, Si, Ga, Ge, and Sn, α and β satisfy 2.3≤α+β, α<β, and 0.5<α<1.9, and the substitution element is one or more elements selected from the group consisting of elements having a melting point higher than that of Fe among elements of Groups 4 to 10.

Disclosed is a force sensor. More particularly, the force sensor includes a first permanent magnet layer; a magnetic tunnel junction disposed on the first permanent magnet layer and configured to have a preset resistance value; and a second permanent magnet layer disposed to be spaced apart from the magnetic tunnel junction, wherein the second permanent magnet layer moves in a direction of the first permanent magnet layer when pressure is applied from outside, the preset resistance value of the magnetic tunnel junction is changed when a magnetic field strength formed between the first permanent magnet layer and the second permanent magnet layer becomes a preset strength or more according to movement of the second permanent magnet layer, and the force sensor senses the pressure based on a change in the preset resistance value.

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1):
Co.sub.2Fe.sub.αX.sub.β  (1)
(in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and α and β represent numbers that satisfy 2.3≤α+β, α<β, and 0.5<α<1.9).

The present disclosure provides: a magnetoresistive element having a large magnetoresistance change ratio (MR ratio); and a magnetic sensor, a reproducing head and a magnetic recording and reproducing device.

The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different amount of TMR structures as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.